SOI structure and manufacturing method thereof

Abstract

A manufacturing method for an SOI structure comprises the steps of providing a substrate; forming a buried oxide layer and a semiconductor layer which are sequentially located on the substrate; forming side walls on the buried oxide layer and the semiconductor layer; with the side walls serving as masks, removing part of a substrate material in the substrate direction so as to form a groove encircled with the remaining substrate and the buried oxide layer; and forming a dielectric material in the groove. In addition, the invention further provides the SOI structure. The SOI structure comprises the substrate, the dielectric material located on the edge of the substrate, the buried oxide layer, the semiconductor layer and the side walls, wherein the buried oxide layer and the semiconductor layer are sequentially located on the substrate and the dielectric material, and the side walls are positioned on the buried oxide layer and the semiconductor layer. According to the technical scheme, the SOI structure and the manufacturing method have the advantages that the substrate is provided with the groove, the dielectric material is formed in the groove, the distance between the semiconductor layer and the substrate is increased, and parasitic capacitance between the semiconductor layer and the substrate is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an SOI structure and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, the integration level of integrated circuits is getting higher and higher, the feature size of devices is getting smaller and smaller, and the influence of devices themselves on radio frequency characteristics is becoming more and more obvious. [0003] Semiconductor devices using bulk silicon substrates are prone to latch-up effects. In the prior art, a silicon-on-insulator SOI (Silicon On Insulator, SOI) structure substrate has been developed, and a semiconductor device using the SOI structure has better radio frequency characteristics. [0004] refer to figure 1 , shows a schematic diagram of an SOI structure semiconductor device in the prior art. The semiconductor device includes: a substrate 1, a buried oxide layer 2 (Buried Oxide, BO...

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Problems solved by technology

[0003] Semiconductor devices using bulk silicon substrates are prone to latch-up

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