Transistor fabrication method with strained channel and transistor with strained channel

Abstract

The invention provides a preparation method of a transistor with a stressed channel and the transistor with the stressed channel. The method comprises the following steps: providing a substrate which comprises a device layer; forming a transistor, including a source electrode and a drain electrode formed in the device layer and a grid electrode formed on the surface of the device layer; forming an insulation protective layer on the surface of the device layer; forming a stress layer on the surface of the insulation protective layer; suspending the device layer where there is a conducting channel of the grid electrode of the transistor such that the device layer is curled under the action of the stress layer, thus leading to tensile strain of the conducting channel of the grid electrode of the transistor. The invention has advantages as follows: the device layer where there is the grid electrode is curled freely and the device layer undergoes strain under the action of the tensile strain; and as the strain is introduced by physical deformation, strain is stable and is not easy to disappear.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a method for preparing a transistor with a strained channel and a transistor with a strained channel. Background technique [0002] As semiconductor devices shrink in size, traditional bulk silicon materials are approaching their physical limits. However, the requirements for increasing the driving current of MOS devices are getting higher and higher. In order to improve the performance of MOS devices, strained silicon technology has been adopted in the industry to enhance the current driving capability. [0003] The so-called strain technology is a technology that introduces stress at the conductive channel of the MOS device to strain the semiconductor material there, thereby improving the carrier mobility of the conductive channel. Improving the carrier mobility of the conductive channel is beneficial to increasing the driving current of the MOS device. [0004] In the p...

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Problems solved by technology

However, this method is complex and expensive, and it is difficult for the strained material to maintain a strained state in the subsequent semiconductor planar process and packaging process.

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