Unlock instant, AI-driven research and patent intelligence for your innovation.

Plasma-introduced damage detection structure and manufacturing method

A technology of damage detection and plasma, applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of low damage, limited area of ​​antenna 22, limited area, etc., increase the probability of reaching, and improve the antenna ratio , the effect of increasing the overall area

Active Publication Date: 2016-09-07
SEMICON MFG INT (SHANGHAI) CORP
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, the virtual metal bonding pad 23', the metal bonding pad 23 and the antenna 22 are all formed on the scribing lane. Since the scribing lane area on the wafer surface is limited, the area of ​​the antenna 22 is also limited.
As a result, the antenna ratio AR used for online monitoring of PID in the prior art is only 7E+4, and the probability of plasma-induced damage is low, which is not conducive to quickly discovering the cause of plasma-induced damage to the semiconductor device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma-introduced damage detection structure and manufacturing method
  • Plasma-introduced damage detection structure and manufacturing method
  • Plasma-introduced damage detection structure and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The core idea of ​​this embodiment is to electrically connect a plurality of virtual metal bonding pads to metal bonding pads through virtual metal bonding pads, and the plurality of virtual metal bonding pads and metal bonding pads together serve as a new antenna structure for collecting charges, improving The overall area of ​​the antenna structure is increased, thereby increasing the antenna ratio, increasing the probability of plasma-induced damage, and facilitating the rapid discovery of the cause of the plasma-induced damage to the semiconductor device.

[0036] Please refer to image 3 and Figure 4 , in this embodiment, a plasma-induced damage detection structure is proposed, including: a semiconductor device 100 , an interlayer dielectric layer (not shown in the figure), and at least one metal interconnection layer 200 formed in the interlayer dielectric layer. Wherein, the metal interconnection layer 200 includes a metal pad 230, a dummy metal pad 231, and a ...

Embodiment 2

[0050] Since the previous antenna structure is used in Embodiment 1 to be connected with the metal welding pad as a new antenna structure for collecting charges, the antenna still occupies some space on the scribing lane to some extent. In some devices, only virtual metal pads and metal pads can be used as antennas to meet the requirements. Therefore, this embodiment is improved on the basis of Embodiment 1. The original antenna structure is no longer formed, and only metal pads are formed. Welding pads and dummy metal pads, and connecting the metal pads and dummy metal pads as a new antenna structure for collecting charges.

[0051] Please refer to Figure 5 with Image 6 , in this embodiment, a plasma-induced damage detection structure for measuring plasma-induced damage is proposed, including: a semiconductor device 100; an interlayer dielectric layer (not shown in the figure) and at least A metal interconnection layer 200, wherein the metal interconnection layer 200 incl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a plasma induced damage detecting structure and a manufacture method. Multiple virtual metallic bonding pads are connected through virtual metallic bonding pad connecting lines so as to become a new antenna structure used for collecting charges. Therefore, the total area of the antenna structure is enlarged and an antenna ratio is increased. Thus, the generation probability of plasma induced damage is increased and further a reason resulting in a plasma induced damage occurring to a semiconductor device is easy and rapid to find out.

Description

technical field [0001] The invention relates to the field of semiconductor performance testing, in particular to a plasma-introduced damage detection structure and a manufacturing method. Background technique [0002] In the process of semiconductor chip fabrication, plasma induced damage (Plasma Induced Damage, PID) is crucial to the quality and reliability of semiconductor chips. PID may appear in many manufacturing processes in front-end or back-end production, such as: ion implantation, dry etching, and plasma-enhanced chemical vapor deposition (Plasma-Enhanced Chemical Vapor Deposition, PECVD) and other manufacturing processes, plasma will be used Implantation, etching or deposition are performed, and a large amount of plasma charges will be introduced into the chip; the introduced plasma charges may accumulate more and more inside the chip, forming a plasma current. The plasma current formed by PID can break down some semiconductor devices on the chip, reducing the re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544
Inventor 陆黎明
Owner SEMICON MFG INT (SHANGHAI) CORP