Device for removing oxidation fog on silicon polishing surface by impurity absorption source prepared on back of silicon wafer by sand blasting

Abstract

The invention relates to a device for removing oxidation fog on a silicon polishing surface by an impurity absorption source prepared on the back of a silicon wafer by sand blasting. The device comprises a carborundum nozzle, a nozzle moving device, a dust removal air cabinet, a silicon wafer conveyor belt, a carborundum storage tank and a first dust collecting tank, wherein the carborundum nozzle is arranged on the nozzle moving device and is arranged above the silicon wafer conveyor belt; the carborundum nozzle can move left and right above the silicon wafer conveyor belt under the action of the nozzle moving device; the dust removal air cabinet is arranged above the silicon wafer conveyor belt and extends into the upper surface of the silicon wafer conveyor belt from the upper part of the silicon wafer conveyor belt; the carborundum nozzle is arranged in the dust removal air cabinet; the top of the dust removal air cabinet is provided with through holes; the dust removal air cabinet is communicated with the first dust collecting tank by the through holes through a pipeline; the carborundum nozzle is communicated with the carborundum storage tank by a pipeline.

Description

technical field [0001] The invention relates to the technical field of IC-level silicon single crystal polished wafers, in particular to a device for manufacturing a gettering source by sandblasting the back of a silicon wafer to eliminate oxidation mist on a silicon polished surface. Background technique [0002] IC-grade silicon single crystal polished wafer is the core material for manufacturing large-scale and ultra-large-scale integrated circuits, and is mainly used in high-tech fields such as high-speed computers and aerospace. The micro-defect "oxidation mist" of silicon single crystal polished wafers has always plagued the quality of silicon single crystal polished wafers for high reliability devices. For a long time, people have adopted various methods to eliminate the oxide mist on the surface of silicon polished wafers. The method adopted is mainly through the way of gettering, and there are two kinds of gettering inside and outside gettering. Internal gettering...

AI Technical Summary

Problems solved by technology

Internal gettering is mainly to use the oxygen precipitation in the silicon wafer to generate a gettering area to eliminate the oxidation mist on the silicon polishing surface. Because of the expensive equipment and complicated process, the oxygen precipitation in the silicon wafer is required to be evenly distributed, difficult to control, and poor in repeatability. less external application

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