64 results about "Impurity absorption" patented technology

The invention discloses a rammer compactor used for building construction. The rammer compactor comprises a base frame and a box body. Threaded rods are arranged at the left end and the right end of the upper side of the base frame through connecting seats, the threaded rods are connected with adjusting plates in a thread mode, and a supporting rod is arranged at the lower ends of the adjusting plates; connecting plates are symmetrically arranged on the left and right sides of the box body, the connecting plates are connected with the supporting rod in a sliding mode, and upper damping springs and lower damping springs are arranged on the upper side and the lower side of the connecting plates of the connecting plates correspondingly; a motor cavity is formed in the right portion of the box body, an impurity absorption cavity is formed in the left portion of the box body, and an air inlet is formed in the upper portion of the left side of the impurity absorption cavity; a draught fan is arranged on the outer portion of the air inlet, an impurity absorption tube is connected to the draught fan, and the lower end of the impurity tube stretches out of the lower end of the base frame and is provided with an impurity absorption cover; a telescopic device is arranged at the upper end of the impurity absorption cavity, the lower end of the telescopic device stretches into the impurity absorption cavity, and a dust filter plate is arranged at the lower end of the telescopic device. According to the rammer compactor, the structure is simple, the using is convenient, the damping effect is good, maintenance cost is lowered, and the tamping quality is improved.

The invention relates to an encapsulation structure for wafer backside. The structure comprises a semiconductor substrate and a multilayered structural layer which is arranged at the bottom of the semiconductor substrate and is formed by combining a polysilicon layer and an insulating layer (such as a silicon dioxide layer); the multilayered structure can promote the effect of impurity absorption, effectively prevents automatic doping, improves the phenomenon of burr, and saves process cost; and through the structure, the bowing degree and the warping degree of the silicon substrate are easily adjusted.

Provided is a method for extracting m-phthalic acid-5-sodium sulfonate from ternary-monomer industrial waste water. A sediment crystallization tank (A), a pressure filter (B), an ester decomposition tank (C), a high-pressure pump (D), a distillation tower (E), a decoloration and impurity absorption kettle (F), a filter (G), a concentration and crystallization kettle (H), a centrifugal hydroextractor (I), a flash melting kettle (J), a fine filter (K), a secondary concentration and crystallization kettle (L), a rubber lining water extractor (M) and a drying machine (N) are connected to be a production line, the ternary-monomer industrial waste water serves as the main raw material, an organic precipitant (2), sodium hydroxide (6), activated carbon (9), deionized water (16), sulfuric acid (17) and activated carbon (9) are sequentially added in related devices according to process requirements through the process procedures of various processes, and finished m-phthalic acid-5-sodium sulfonate (24) is prepared under the specific temperature, time and process conditions of the process procedures of various processes. The method can further extract out sodium sulfate crystals (4) in the waste water. Pollution is reduced, environment is protected, waste is turned into wealth, and double purposes are achieved.

The invention discloses a metallic silicon surface treatment purification method, comprising the following steps: deoiling and cleaning metallic silicon; carrying out ball-milling on the metallic silicon with alcohol or ketone as medium and then drying the metallic silicon with argon; heating the dried metallic silicon quickly and carrying out heat preservation and reduction in succession and then cooling; taking out the cooled metallic silicon and dipping the metallic silicon into a mixed solution of muriatic acid and hydrofluoric acid; and cleaning the dipped metallic silicon with deionized water. In the invention, principles of impurity outdiffusion and surface impurity absorption of metallic silicon are adopted, a large area of defect is created on the surface of the metallic silicon artificially to form an affected layer, impurities in the metallic silicon are absorbed at high temperature, and preliminary purification treatment is carried out on the surface of the metallic silicon to improve the purity of the metallic silicon to 99.99%-99.999% (4-5N), so that the invention can be applied to silicon used for solar cell or further-purified material for subsequent purification technology.

The invention discloses a heat treatment method of a solar-grade silicon crystal, which comprises the steps of placing the silicon crystal into a vacuum heating furnace, introducing protective gas into the vacuum heating furnace and leading the protective gas to flow through the surface of the silicon crystal during the heat treatment process of the silicon crystal, wherein the protective gas is a) gas containing hydrogen atoms; or b) mixture of the gas containing the hydrogen atoms and inert gas. The adoption of the method for carrying out heat treatment on the silicon crystal can significantly prolong the minority carrier lifetime of the silicon crystal, simultaneously regulate the distribution uniformity of radial resistivity of the silicon crystal and lead the resistivity of the silicon crystal to be more uniform on the radius direction of the crystal due to the roles of passivation, impurity absorption and the like of H to impurities and defects in the silicon crystal. The method is simple to operate and easy to carry out industrial production, and can significantly improve the quality of a product.

The invention discloses a novel solar cell P diffusion impurity absorption process. The novel solar cell P diffusion impurity absorption process is characterized by including the steps of low temperature feeding, rapid heating, high temperature stabilization, high temperature deposition, high temperature propulsion and oxidation, rapid cooling, low temperature deposition, low temperature propulsion and oxidation and low temperature discharging, wherein according to the high temperature deposition step, 8.5-9 L of N2, 500 ml of O2 and 1000 ml of N2-POCl3 are introduced per minute, the temperature of a furnace tube is controlled to be lower than or equal to 830 DEG C, and 12-13 minutes are consumed; according to the high temperature propulsion and oxidation step, 7.5-8 L of N2 and 800 ml of O2 are introduced per minute, the temperature of the furnace tube is controlled to be lower than or equal to 830 DEG C, and 8 minutes are consumed. The novel solar cell P diffusion impurity absorption process belongs to the varying temperature diffusion technology, can guarantee a good P diffusion effect, can improve the impurity absorption capacity during P diffusion and prolong the minority carrier lifetime of a solar cell, and facilitates promotion of conversion efficiency of the solar cell.

The invention relates to a temporary protective paint composition for a water base environment-friendly lens and a preparation method of composition. A temporary protective film of the paint composition, which is formed on a coating lens surface, can prevent surface abrasion, impurity absorption and center bias during lens transport, lens storage and lens dispensing processing, and the temporary protective film is easy to remove after lens dispensing processing. The problems of moist coating of water base paint on low surface coating lens surfaces are solved. The paint can replace conventional solvent based coating of the same type and is environment friendly.

The invention relates to a device for removing oxidation fog on a silicon polishing surface by an impurity absorption source prepared on the back of a silicon wafer by sand blasting. The device comprises a carborundum nozzle, a nozzle moving device, a dust removal air cabinet, a silicon wafer conveyor belt, a carborundum storage tank and a first dust collecting tank, wherein the carborundum nozzle is arranged on the nozzle moving device and is arranged above the silicon wafer conveyor belt; the carborundum nozzle can move left and right above the silicon wafer conveyor belt under the action of the nozzle moving device; the dust removal air cabinet is arranged above the silicon wafer conveyor belt and extends into the upper surface of the silicon wafer conveyor belt from the upper part of the silicon wafer conveyor belt; the carborundum nozzle is arranged in the dust removal air cabinet; the top of the dust removal air cabinet is provided with through holes; the dust removal air cabinet is communicated with the first dust collecting tank by the through holes through a pipeline; the carborundum nozzle is communicated with the carborundum storage tank by a pipeline.

The invention discloses a UV makeup process for a broad-width holographic embossing mother set. Antistatic treatment layers are manufactured at a transparent mother set and a plastic basement membrane of a unit board by using a UV makeup adhesive with the antistatic property. The process comprises: making a film sheet; making a mother set and an antistatic treatment layer of a plastic basement membrane; copying the pattern of the mother set unit one by one at the antistatic treatment layer of the plastic basement membrane by using an antistatic UV makeup adhesive until completing all makeup; and carrying out metallization processing to form a metal layer to obtain a broad-width holographic embossing mother set. The Plastic basement membrane thickness is 0.1 to 0.2mm; and the surface resistance value of the anti-static UV makeup coating after curing is 5*10<6>omega. The makeup adhesive has the antistatic property, so that the static electricity generation probability during the whole makeup process can be reduced, floating impurity absorption in air can be avoided, and the makeup quality and the makeup yield can be improved. With the antistatic treatment layer, the attachment stability of the UV makeup adhesive to the basement membrane can be improved, the makeup yield can be improved, and the makeup efficiency can be enhanced.

The invention relates to a drying cylinder surface cleaning device, comprising a spraying device, a scraper, a friction roller, a cleaning roller and a miscellaneous suction device. The spray sprayed by the spraying device promotes the sticky particles on the cylinder body of the dryer to aggregate into flocs, the binding force between the flocs and the cylinder body of the dryer is significantly reduced, and the flocs and fine fibers are After the initial cleaning of the scraper, the second cleaning of the friction roller, the third cleaning of the cleaning roller, and the fourth cleaning of the dust suction device, the effect is obvious, avoiding the phenomenon of sticking to the cylinder and paper breakage accidents, and avoiding the occurrence of drying The surface of the paper will produce oil spots, which will help improve the drying efficiency of the dryer and reduce the consumption of the scraper.

The invention relates to the field of gas separation and purification engineering, provides a treatment process for purifying recycled hydrogen during production of electronic-grade polycrystalline silicon and aims to solve the problem that the production of the electronic-grade polycrystalline silicon is influenced due to the fact that the content of impurities such as BCl3, borane, phosphine, PCl5, POCl3 and the like in hydrogen cannot be effectively reduced although activated carbon is adopted for absorbing and purifying recycled hydrogen during the production of the electronic-grade polycrystalline silicon. According to the purification scheme, the recycled hydrogen is pre-cooled and then cooled to the temperature below 0 DEG C, and then, the hydrogen is fed into a modified aluminum oxide absorber for impurity absorption and filtered by a filter, so that the purity of the hydrogen reaches 99.999% (V/V), and the production requirement of the electronic-grade polycrystalline silicon is met. The treatment process has the benefits of simplicity, easiness in operation, obvious purification effect and the like.

The invention provides a low-pressure diffusion and low-temperature oxidation gettering process, and belongs to the field of solar cell gettering processes. The method comprises the steps: low-temperature normal-pressure boat entry, rapid low-pressure heating, high-temperature normal-pressure stabilization, high-temperature low-pressure oxidation, four-step high-temperature low-pressure source communication and knot pushing, long-time cooling, oxidation and impurity absorption, rapid normal-pressure cooling and low-temperature deposition, and low-temperature boat exit. The furnace tube is rapidly cooled for a long time through the steps of cooling, oxidizing and gettering for a long time and controlling the oxygen flow, so that the uniformity and repeatability of diffusion sheet resistanceare improved, the surface doping concentration and junction depth are optimized, the internal defects of a silicon wafer are reduced, and the conversion efficiency of the solar cell is improved.

The present invention discloses a medication separation and extraction apparatus, and relates to the technical filed of medication separation apparatuses. The apparatus is characterized in that: an extraction case body is provided with a cavity design, a heating pipe is provided windingly inside the cavity, a waste outlet is provided at the bottom of the extraction case, a temperature sensor and a liquidometer are provided respectively on an inner side wall of the extraction case, the temperature sensor is connected with a temperature controller, and the temperature controller is connected with the heating pipe, the liquidometer is connected with an alarm, a feed inlet is provided on the top of the extraction case, the extraction case is connected with a stirring tank by a medicinal liquid delivering pipe, a filter screen is provided inside the medicinal liquid delivering pipe, and the medicinal liquid delivering pipe is mounted with a one-way valve, and a stirring apparatus is provided inside the stirring tank. According to the present invention, a structure design is reasonable and novel, the heating pipe is provided with a uniformly winding design, and therefore the extraction case can be heated more uniformly, and an activated carbon adsorption net is provide in the stirring apparatus, and is capable of impurity absorption, so that the medication is good in purity, and the whole process is convenient in operation, the device is stable and reliable in running and high efficient in extraction and seperation.

The invention discloses a device and a method for deposition of a silicon-based polycrystalline silicon film. The device comprises a main deposition chamber, a gas inlet pipe, a main gas conveying passage, an auxiliary gas conveying passage, gas dispersion holes and a sealing flange, wherein the main gas conveying passage and the auxiliary gas conveying passage are mounted in the main deposition chamber, and the auxiliary gas conveying passage is vertically connected with the main gas conveying passage; one end of the gas inlet pipe is connected with the main gas conveying passage through thesealing flange, and the other end is connected with a source gas MFC located outside the main deposition chamber; the gas dispersion holes are uniformly distributed in the auxiliary gas conveying passage. According to the device, single-tube growth can be realized, no independent gas guide tubes are used, mounting is quite simple, and the technology is simple to adjust. The film produced by the device has good impurity absorption performance, in-chip and inter-chip uniformity is small, and growth cost is reduced.

The invention relates to a PERC battery back passivation process. During the perc battery process, flocking, diffusing, phosphorus wash, and then silicon oxide is first oxidized on the back surface ofthe passivation layer after the phosphorus is washed. Then add alumina, heat treatment process, back silicon nitride using four layers and multi-layers, adding one step of silicon oxide passivation before alumina passivation, can reduce alumina thickness, reduce alumina raw material reaction cost, increase long-wave reflection, improve conversion efficiency, and increase short-circuit current ofperc battery Compared with the prior art, the backside passivation process of the PERC battery provided by the invention can keep the same efficiency with the prior art and improve the efficiency by 0.10%, and the passivation and impurity absorption effects are improved.

The invention relates to the field of triode manufacturing, and particularly relates to a preparation method of a planar triode chip. According to the preparation method of the planar triode chip, the surface of a silicon wafer is cleaned, and then oxidation and photoetching processing is performed on the surface of the silicon wafer; boron diffusion, phosphorus diffusion and platinum diffusion are performed on the obtained silicon wafer so that a composite center is formed; metal impurities on the surface of the composite center are removed by a phosphorus diffusion impurity absorption technology; and steam aluminum, alloy, passivation, back thinning and back metallization processing is performed on the silicon wafer of which the metal impurities are removed so that the planar triode chip is obtained. A triode is prepared by the platinum diffusion technology so that production cost is greatly reduced, and the preparation method is suitable for batch production of the triode.

The invention discloses an annular double-sided adhesive tape and equipment and technology for producing the annular double-sided adhesive tape. The annular double-sided adhesive tape comprises an annular upper isolating film, a double-sided adhesive tape main body and a lower isolating film, the upper isolating film and the lower isolating film are correspondingly arranged on the upper and lowersurfaces of the double-sided adhesive tape main body in a matched mode, the inner diameter and outer diameter sizes of the upper isolating film, the double-sided adhesive tape main body and the lowerisolating film are same, and the upper isolating film protrudes into the ring to form a handle used for tearing and taking the upper isolating film. The internally arranged handle is not prone to being interfered by other procedures in use, the situation that the upper isolating film is separated from the double-sided adhesive tape main body under force is avoided, so that the problems of wiredrawing and impurity absorption of the double-sided adhesive tape main body are solved, and the product good rate of the application fields of the annular double-sided adhesive tape can be improved. The production equipment and technology of the annular double-sided adhesive tape can produce the annular double-sided adhesive tape with the internally arranged handle, manual operation is simplified, errors generated by the manual operation are avoided, and the production efficiency and good rate of the annular double-sided adhesive tape are improved.

The invention provides an environment-friendly gas absorption device used in a chemical workshop. The device comprises a rubber cap, a chemical agent tank, a suction pump, a liquid guiding tube, a gasabsorption hood, a chemical agent spray strip, spray nozzles, an air impurity absorption wheel structure, a gas sample absorption and return bottle structure, a gas impurity filter gas-suction guidefan, an adjustable quick mounting rack, a gas guide metal hose, a connecting seat, a support frame and an exhaust volume adjustable baffle cover structure, wherein the rubber cap is connected with anentrance at the right upper part of the chemical agent tank by means of screw threads. The environment-friendly gas absorption device solves the problems that the installation height cannot be adjusted, environmental pollution is easily caused by the improperly treated gas, the gas in the workshop cannot be sampled and detected, the fine particles cannot be absorbed before the gas is exhausted, and the gas output is not conveniently adjusted timely.

The invention relates to a CPE pattern isolating membrane of a glass interlayer PVB membrane. The CPE pattern isolating membrane is prepared from the following components in parts by weight: 12.5 or 25 parts of calcium carbonate mixed material, 50 parts of high pressure low density polyethylene, 50 parts of low pressure high density polyethylene, 100 parts of linear high pressure low density polyethylene, 2.13-6.38 or 2.3-6.8 parts of PE antistatic agent, 2.13-10.62 or 2.3-11.3 parts of PE-A crystal point removing agent and 2.1-21.3 or 2.3-22.5 parts of metallocene. The rolled isolating membrane product is colorless and semitransparent, the thickness is 20+/-2 mu m, the gram per square meter is less than or equal to 20+/-2, the surface detail height is less than 100 mu m, the vertical strength is greater than 10MPa, the vertical or lateral elongation is greater than 150%, and the lateral strength is greater than 8MPa. The product is prepared by the following six steps: preparation of the calcium carbonate mixed material; stocking; mixing; casual inspection; drying; feeding. The isolating membrane prepared is weak in static electricity, unremarkable in hitting people, difficult in dust collection and impurity absorption, high in rate of graded product, few in crystal point, flat and smooth in surface, high in membrane strength and good in malleability.

The invention discloses efficient composite slag lotion which comprises the following raw materials in percentage by weight: 49-70% of calcium powder, 20-45% of aluminum ash, 5-12% of high-alumina cement and 0.5-2.0% of sodium carboxymethylcellulose. The calcium powder, the aluminum ash and the high-alumina cement are applied to synergic desulfuration, and are used for mutually filling and refining the porous structure of the slag lotion, and the obtained efficient composite slag lotion is good in deoxidation and desulfuration effect and impurity absorption effect and rapid in slagging speed, and has a remarkable function in improving the comprehensive economic benefits of steel plate companies.

A method of manufacturing a semiconductor device, includes introducing a substrate into a growth furnace, forming impurity absorption layers on the substrate and on inner walls of the growth furnace, the impurity absorption layers absorbing impurities on a surface of the substrate and impurities in the growth furnace, etching and removing the impurity absorption layers and a portion of the substrate to produce a thinned substrate, forming a buffer layer on the thinned substrate, and forming semiconductor layers on the buffer layer.

The invention relates to comprehensive sewage purifying treatment equipment for environmental engineering. The equipment comprises a heavy metal processor, a multi-medium filter and a treatment purifier which are connected with one another integrally. The filtered outlet of the heavy metal filter is connected to a water inlet pipe of the multi-medium filter, and the discharge opening of the multi-medium filter is connected to a water inlet pipeline of the treatment purifier. The heavy metal processor has high impurity absorption efficiency, and can treat heavy metals in water through adsorption, centrifugation and electrolysis separately, so that the heavy metal sludge treatment efficiency and quality are improved effectively. The multi-medium filter has the advantages of circular filtering treatment, good filter effect and no waste of water resources and a leaker is less prone to blockage. The treatment purifier has an effect of detecting the water quality, can perform reflux treatment on sewage, and is good in sewage treatment effect.

An impurity elimination device is applied to a filtering frame of a water inlet of a sewer. The device comprises an impurity absorption body inserted in the filtering frame, a square absorption opening is formed in the side wall of the absorption body, an impurity elimination plate is arranged on the lateral side of the filtering frame and connected with the absorption body through a driving mechanism, and the elimination plate is provided with a square-frame-shaped cutter matched with filtering meshes of the filtering frame. When impurities in the filtering frame are cleaned away, the driving mechanism drives the elimination plate to move horizontally to the side wall of the filtering frame, the cutter penetrates through the filtering meshes and then is inserted the absorption opening, then an impeller assembly on an absorption cavity acts so that negative pressure can be formed in the absorption cavity, and accordingly the impurities eliminated by the cutter are absorbed.

The invention relates to a preparation method of collagen, which belongs to the technical field of biotechnology. The preparation method comprises the following steps: destructing an internal structure of fish scales in a ball milling manner, adding a mixing solvent in a ball milling process, softening hydroxyapatite inside the fish scales by virtue of the mixing solvent, then performing the steamexplosion treatment to destruct a fiber ply structure inside the fish scales, enabling a hydroxyapatite layer to be ruptured, then performing the treatment by using mixed acid, wherein the mixed acidcan effectively enter the fish scales to eliminate the hydroxyapatite, the humic acid in the mixed acid can further adsorb and remove the free calcium, then performing the mixed enzymolysis for the fish scales and immobilized enzyme, so that since the active carbon is used as a carrier, the impurity absorption and discoloration can be effectively performed, the enzymolysis effect can be further improved, the purity of the collagen can be improved, and an effect for extraction and purification can be further achieved by virtue of the bacterial effect.

The invention provides a gas-liquid separator. The gas-liquid separator comprises a shell, an inlet, an outlet, a flow guide pipe and an impurity absorption device, wherein the shell is provided witha gas-liquid separation cavity; the inlet is formed in one end of the shell, and communicates with the gas-liquid separation cavity; the outlet is formed in the other end of the shell and communicateswith the gas-liquid separation cavity; the flow guide pipe is arranged in the gas-liquid separation cavity and extends from the outlet towards the inlet and communicates with the outlet, and the flowguide pipe and the inlet are arranged at intervals; at least one ventilation structure is arranged on the circumferential wall of the flow guide pipe or the end wall of the back inlet, and the ventilation structures are connected with the gas-liquid separation cavity and the inner cavity of the flow guide pipe; and the impurity adsorption device comprises at least one first impurity adsorption structure and is arranged in the gas-liquid separation cavity. Due to the arrangement of the flow guide pipe, liquid refrigerant and impurities are prevented from being directly discharged to the outlet, and the gas-liquid separation effect is improved; and meanwhile, the impurity adsorption device is arranged, so that the effect of inhibiting the impurities is achieved, the impurities are preventedfrom entering the compressor, a pump body assembly is clamped, the flowing resistance of the refrigerant is not increased due to the arrangement of a filter screen, and the performance of the compressor is improved.