1 results about "Impurity absorption" patented technology

The application relates to the technical field of semiconductor material manufacturing, and discloses an N-type monocrystalline silicon wafer diffusion impurity absorption optimization method, which comprises the following steps: removing surface contaminants and tiny defects by pretreating an N-type monocrystalline silicon wafer; forming an impurity absorption layer on at least one surface of the pretreated N-type monocrystalline silicon wafer; performing diffusion annealing treatment on the N-type monocrystalline silicon wafer with the formed impurity absorption layer, and removing the impurity absorption layer material on the N-type monocrystalline silicon wafer after the diffusion annealing treatment; and completing the N-type monocrystalline silicon wafer diffusion impurity absorption optimization work. The impurity absorption layer formed on the surface of the silicon wafer can effectively capture and fix heavy metal impurities and defects, such as oxygen precipitation and metal precipitation, which may be generated in the subsequent process of the silicon wafer, so as to prevent the impurities and defects from causing adverse effects on the performance of the silicon wafer. The diffusion annealing treatment further promotes the diffusion of the impurities and the impurity absorption capacity of the impurity absorption layer, and ensures the effective removal of the impurities.