5 results about "Impurity absorption" patented technology

The invention discloses a Sr-doped LaFeO3 high-emissivity coating and a preparation method thereof.The Sr-doped LaFeO3 high-emissivity coating is of a double-layer structure, and the structure of the coating sequentially comprises a metal substrate, a metal bonding layer and a high-emissivity layer from bottom to top; the metal substrate is made of a high-temperature Ni-based alloy, the metal bonding layer is a NiCrAlY alloy bonding layer or a CoNiCrAlY alloy bonding layer, and the high-emissivity layer is a La1-xSrxFeO3 layer (0 lt, x is smaller than or equal to 0.6) with different Sr doping amounts. LaFeO3 is selected as a matrix material, Sr < 2 + > is impurity ions with similar radiuses, impurity absorption and free carrier absorption in a crystal are increased through doping of Sr < 2 + >, the emissivity of the La1-xSrxFeO3 coating is improved, and the high-emissivity coating with the emissivity being 0.8 or above is prepared.

The application relates to the technical field of semiconductor material manufacturing, and discloses an N-type monocrystalline silicon wafer diffusion impurity absorption optimization method, which comprises the following steps: removing surface contaminants and tiny defects by pretreating an N-type monocrystalline silicon wafer; forming an impurity absorption layer on at least one surface of the pretreated N-type monocrystalline silicon wafer; performing diffusion annealing treatment on the N-type monocrystalline silicon wafer with the formed impurity absorption layer, and removing the impurity absorption layer material on the N-type monocrystalline silicon wafer after the diffusion annealing treatment; and completing the N-type monocrystalline silicon wafer diffusion impurity absorption optimization work. The impurity absorption layer formed on the surface of the silicon wafer can effectively capture and fix heavy metal impurities and defects, such as oxygen precipitation and metal precipitation, which may be generated in the subsequent process of the silicon wafer, so as to prevent the impurities and defects from causing adverse effects on the performance of the silicon wafer. The diffusion annealing treatment further promotes the diffusion of the impurities and the impurity absorption capacity of the impurity absorption layer, and ensures the effective removal of the impurities.

The present invention discloses an Sr-doped LaFeO3 high-emissivity coating and a preparation method thereof. The Sr-doped LaFeO3 high-emissivity coating is a double-layer structure, wherein the coating structure comprises a metal substrate, a metal bonding layer and a high-emissivity layer from bottom to top; the metal substrate is a high-temperature Ni-based alloy, the metal bonding layer is a NiCrAlY alloy bonding layer or a CoNiCrAlY alloy bonding layer, and the high-emissivity layer is LaFeO3 with different Sr doping amounts. 1‑x Sr x FeO3 layer (0< x ≤0.6). The present invention selects LaFeO3 as the matrix material, Sr 2+ are impurity ions with similar radii, Sr 2+ The doping of La increases the impurity absorption and free carrier absorption in the crystal, making La 1‑x Sr x The emissivity of the FeO3 coating was improved, and a high emissivity coating with an emissivity above 0.8 was prepared.

According to the method, the Si-C or Si-Ge region is formed on the shallow surface layer of the substrate wafer through carbon / germanium ion implantation, so that the impurity absorption capacity of the interior of the substrate wafer to impurity ions is improved, metal impurity pollution can be reduced, dark current is inhibited, and white pixel defects are reduced; through step-by-step shallow ion implantation, decreasing concentration gradient distribution is formed from the surface of a wafer to the inside of the wafer, abundant capture sites can be provided on the surface to efficiently adsorb substrate impurity ions, and diffusion barrier is formed in a deep layer through gradient distribution, so that migration of impurities to an active region is effectively inhibited, and the efficiency of the device is improved. Therefore, the adverse effect on the device performance is reduced while the adsorption effect is ensured, crystal lattices can be stabilized, and the damage of subsequent high temperature to the crystal lattices is reduced. The growth temperature of the epitaxial layer after the adsorption ions are injected is used for carrying out thermal activation on the injected adsorption ions to carry out annealing and defect repairing on the ion doped region, so that higher thermal budget can be avoided, and the influence on other regions and devices on the substrate is reduced.

The utility model discloses an absorption device for trace impurities in electronic gas, and relates to the technical field of trace impurity absorption devices.The absorption device comprises an impurity absorption box and a plurality of partition plates arranged in the impurity absorption box, and the multiple partition plates are configured to form an S-shaped flow channel in the impurity absorption box; a gas inlet pipe and a gas outlet pipe which extend into the impurity absorption box are fixedly mounted at the top of the impurity absorption box, and the lower end of the gas inlet pipe penetrates through the partition plates and extends to the bottom of the impurity absorption box, so that bubbles with electronic gas flow along the S-shaped flow channel, the stroke of the bubbles is increased, and the retention time of the bubbles in absorption liquid in the impurity absorption box is prolonged; the absorption efficiency is improved.