Device and method for deposition of silicon-based polycrystalline silicon film

Abstract

The invention discloses a device and a method for deposition of a silicon-based polycrystalline silicon film. The device comprises a main deposition chamber, a gas inlet pipe, a main gas conveying passage, an auxiliary gas conveying passage, gas dispersion holes and a sealing flange, wherein the main gas conveying passage and the auxiliary gas conveying passage are mounted in the main deposition chamber, and the auxiliary gas conveying passage is vertically connected with the main gas conveying passage; one end of the gas inlet pipe is connected with the main gas conveying passage through thesealing flange, and the other end is connected with a source gas MFC located outside the main deposition chamber; the gas dispersion holes are uniformly distributed in the auxiliary gas conveying passage. According to the device, single-tube growth can be realized, no independent gas guide tubes are used, mounting is quite simple, and the technology is simple to adjust. The film produced by the device has good impurity absorption performance, in-chip and inter-chip uniformity is small, and growth cost is reduced.

Description

technical field [0001] The invention relates to a device and method for silicon-based polysilicon film deposition. Background technique [0002] In the contemporary information society, microelectronics technology is the basis for the development of modern high-tech industries. Semiconductor silicon materials are the basic functional materials supporting electronic technology and the most widely used semiconductor materials. More than 90% of large-scale integrated circuits (LST), Very large-scale integrated circuits (VLSI) are manufactured on high-purity and high-quality silicon-based substrates. With the rapid development of the domestic integrated circuit industry, the demand for silicon-based substrate materials is also increasing, and the quality requirements are also getting higher and higher. In order to make better silicon-based substrate materials, a gettering process is introduced. Form a clean area on the IC surface. The traditional gettering process is divided i...

AI Technical Summary

Problems solved by technology

The traditional gettering process is divided into two types: internal gettering and external gettering, but these two methods are not easy to control. With the continuous research on gettering, the enhanced gettering was finally invented, that is, on the silicon substrate A layer of polysilicon film is deposited on the back of the material. Due to the difference in thermal expansion and contraction coefficients, the surfaces of the two materials will be subject to a certain stress. According to the formation mechanism of defects inside the crystal, the defects inside the crystal will be concentrated in the stress-rich area. At the same time, the oxygen atoms and metals in the silicon-based substrate material will diffuse like the gas phase outside the crystal, so that a clean area will appear on the surface layer of the silicon-based substrate

[0003] In summary, the traditional gettering process is not easy to control, and the gettering effect is not good. The polycrystalline enhanced gettering can overcome this shortcoming, so the polycrystalline deposition process is particularly important.

The growth of polycrystalline has also become a subject of continuous research. Now the more commonly used method is LPCVD growth. The traditional method is to use inner and outer double tubes and three air guide tubes to cooperate with the intake method. The process control is extremely complicated, and The inner and outer pipes and intake pipes are made of quartz or silicon carbide. The cost of the MFC used in the three-stage air intake is very high, and the most important thing is that the installation is extremely complicated.

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