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A decoupling reactive ion etching equipment containing a gas flow control device

An air flow control device and reactive ion etching technology, which are applied in crystal growth, post-processing details, post-processing and other directions, can solve the problems of reduced service life of the chamber, shortened service life of the chamber, and increased maintenance costs, and achieve environmental preservation. Consistent, improved stability, stable pressure performance effect

Active Publication Date: 2016-11-30
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Description
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AI Technical Summary

Problems solved by technology

The above defects will reduce the service life of the chamber, thereby reducing the service life of the entire chamber, reducing productivity and increasing maintenance costs

Method used

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  • A decoupling reactive ion etching equipment containing a gas flow control device
  • A decoupling reactive ion etching equipment containing a gas flow control device
  • A decoupling reactive ion etching equipment containing a gas flow control device

Examples

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Embodiment Construction

[0025] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0026] In this example, first pass figure 1 , 2 Describe the state of the art. see figure 1 , figure 1 It is a structural schematic diagram of a cavity part of a DRIE device of AMEC in the prior art. As shown in the figure, the upper part of the chamber of the device is divided into left and right chambers 1 and 4 that are independent of each other, and two wafers 2 and 3 are respectively placed in the left and right chambers and separated from each other. The two chambers are completely independent, and are only connected through the common exhaust port 6 arranged in the middle of the bottom 5 of the chamber. A servo pressure valve is provided below the exhaust port to adjust the pressure in the chamber; the exhaust pipe 8 of the exhaust system is connected to the lower part of the valve 7 . The arrows in the figure represent...

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Abstract

The invention discloses a decoupling reactive ion etching equipment containing a gas flow control device. By sealing and setting a fairing with evenly densely distributed air holes in the common exhaust port at the bottom of the double reaction chamber of the equipment, the gas flow above the servo pressure valve can be controlled. The rectification is carried out first, which greatly improves the uniformity and stability of the gas above the fairing. After the gas is rectified, the pressure in the left and right chambers can be kept consistent, which improves the uniformity of the product. At the same time, the polymer will not accumulate out of sync between the chambers, so that the environment between the chambers remains consistent and improves It improves the stability of the process and prolongs the cleaning cycle of the equipment, thus improving the production efficiency of the equipment and reducing the maintenance cost of the equipment.

Description

technical field [0001] The present invention relates to a decoupling reactive ion etching equipment in the field of semiconductor integrated circuit manufacturing, and more specifically, to a decoupling reactive ion etching equipment for semiconductor decoupling reactive ion etching equipment to improve chamber pressure and gas uniformity, which contains a gas flow control device Decoupling reactive ion etching equipment. Background technique [0002] Decoupled reactive ion etching (Decouple Reaction Ion Etching, DRIE) equipment is an important equipment for the preparation of semiconductor micro-nano devices. The equipment whose surface is not masked is etched by the dual effects of physical bombardment and chemical reaction of active ions on the substrate. [0003] Existing DRIE equipment, such as AMEC (China Micro Semiconductor Equipment Co., Ltd.) adopts a Dualstage design (a variety of equipment has a similar design), that is, there are dual reaction chambers in one ch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/12
Inventor 潘无忌
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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