A system and method for obtaining thermal resistance of igbt devices
A device and thermal resistance technology, which is applied in the field of obtaining the thermal resistance of IGBT devices, can solve the problems of single information volume and low efficiency of IGBT device thermal resistance
Active Publication Date: 2018-10-26
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
[0015] The technical problem to be solved by the present invention is to provide a system and method for obtaining the thermal resistance of IGBT devices, which solves the technical problems of low efficiency and single amount of information in obtaining the thermal resistance of IGBT devices in the prior art
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[0039] A system for obtaining the thermal resistance of an IGBT device provided by an embodiment of the present invention includes a modeling module, a grid division module, an application module, a temperature distribution module, and a calculation thermal resistance module;
[0040] Among them, the modeling module establishes a three-dimensional model according to the characteristic parameters of the IGBT device, wherein the characteristic parameters include the size, material, and thermal conductivity of each component;
[0041] The grid division module divides the 3D model into grids;
[0042] The application module applies loads and boundary conditions to the IBGT device, wherein the loads and boundary conditions include applied power and applied convective heat transfer;
[0043] The temperature distribution module solves the temperature of the three-dimensional model of the IGBT device according to the applied load and boundary conditions and divides the grid, and obtai...
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The invention discloses a system and a method for obtaining the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) device and belongs to the technical field of high power devices. The system comprises a modeling module, a meshing module, a condition applying module, a temperature distribution module and a thermal resistance calculation module; the modeling module is used for establishing a three-dimensional model according to characteristic parameters of an assembly of the IGBT device; the meshing module is used for performing meshing on the three-dimensional model; the condition applying module is used for applying load and boundary conditions to the IGBT device; the temperature distribution module is used for performing temperature solution on the three-dimensional model of the IGBT device to obtain the temperature of the upper surface of a chip of the IGBT device and the temperature of the lower surface of thermal conduction silicone of the IGBT device; the thermal resistance calculation module is used for obtaining the stable state thermal resistance of the IGBT device. According to the system and the method for obtaining the thermal resistance of the IGBT device, computer simulation can be performed on a plurality of factors which can affect thermal distribution and the visual temperature field distribution is graphically displayed through a calculation result.
Description
technical field [0001] The invention belongs to the technical field of high-power devices, in particular to a system and method for obtaining thermal resistance of IGBT devices. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is widely used in inverters, uninterruptible power supplies (UPS), inverter welding machines, and frequency converters for motor speed regulation. In recent years, with people's increasing requirements for power electronic devices, electronic equipment And the system is developing in the direction of miniaturization and multi-function, and the IGBT is also developing in the direction of small size and high power, but this also causes the high heat flux density of the IGBT device, and people have to further explore the thermal design technology to adapt to this A new trend. The thermal characteristics of the IGBT directly affect the electrical characteristics and life of the device. Generally, we use the thermal resistance value t...
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IPC IPC(8): G06F17/50
Inventor 董少华朱阳军卢烁今胡爱斌
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI