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Straight hole etching method

A technology of straight holes and etching gas, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc. It can solve the problems of unstable etch rate, achieve uniform pore diameter, increase product qualification rate, and reduce pore wall aggregation effect of things

Inactive Publication Date: 2014-06-18
PEKING UNIV FOUNDER GRP CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The embodiment of the present application provides a straight hole etching method to solve the problem that the etching rate is affected by the content of boron and / or phosphorus when forming a straight hole by etching a dielectric layer containing boron and / or phosphorus in the prior art The technical problem that caused the etching rate to be unstable has realized the technical effect that the etching rate of the straight hole is not affected by the content of boron and / or phosphorus, and thus the etching rate is stable, thereby improving the yield of the product

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Embodiment Construction

[0032] The embodiment of the present application provides a straight hole etching method, which is used to solve the technical problem in the prior art that the etching rate is affected by the content of boron and / or phosphorus, resulting in an unstable etching rate.

[0033] The technical solution in the embodiment of the present application is to solve the technical problem that the above-mentioned etching rate is affected by the content of boron and / or phosphorus and the etching rate is unstable. The general idea is as follows:

[0034] By forming a photoresist layer on the surface of the dielectric layer in the protective layer etching machine, covering the dielectric layer, wherein the dielectric layer is a dielectric layer containing boron and / or phosphorus formed on the substrate ; The photoresist layer is photolithographically formed on the photoresist layer and needs to etch at least one region of the straight hole; Utilize the mixed gas of the protective layer etching...

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Abstract

The invention discloses a straight hole etching method which is applied to a protective layer etching machine table and used for processing a semiconductor semi-finished product comprising a substrate and a dielectric layer which forms the surface of the substrate. The method comprises that: a photo-resist layer is formed on the surface of the dielectric layer so that the dielectric layer is covered, and the dielectric layer is the one which is formed on the substrate with boron and / or phosphor; photo-etching is performed on the photo-resist layer, and at least one region requiring etching of a straight hole is formed on the photo-resist layer; and the mixed gas of protective layer etching gas and one inert gas is utilized to etch the at least one region so that at least one straight hole is formed.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a straight hole etching method. Background technique [0002] In the manufacturing process of semiconductor chips, the interlayer dielectric layer (ILD) of various devices is generally made of pure silicon dioxide or silicon dioxide containing boron / phosphorus, in order to connect the metal on the dielectric layer to the device below the dielectric layer , it is necessary to carve a contact hole in a specific area on the dielectric layer. [0003] The dry straight hole etching method is used to etch contact holes. The commonly used machines in the industry are Lam4500, P5000, C5200, TEL7500, etc. Currently, the straight hole etching machines are Lam4500 and C5200. However, the Lam4500 operates by pressing the ceramic ring on the wafer, and cannot etch the thin dielectric layer, while the single-machine C5200 is severely insufficient in production capacity. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311
CPCH01L21/76802H01L21/31116H01L21/31138H01L2221/101
Inventor 李方华陈定平
Owner PEKING UNIV FOUNDER GRP CO LTD