20results about How to "Stable etch rate" patented technology

The invention discloses a direct current bias voltage control device and control method, electronic equipment and a storage medium. The direct current bias voltage control device comprises an electrostatic chuck which adsorbs a wafer; a lower radio frequency power supply and a lower matcher, wherein the lower radio frequency power supply is connected with the lower matcher; the voltage sensor is arranged at the bottom of the electrostatic chuck, the voltage sensor is connected with the electrostatic chuck and the lower radio frequency power supply, and the voltage sensor obtains a voltage signal of the electrostatic chuck to the ground, converts the voltage signal into an analog quantity voltage signal and transmits the analog quantity voltage signal to the lower radio frequency power supply; the lower radio frequency power supply processes the received analog quantity voltage signal to obtain a direct current bias voltage, the direct current bias voltage is compared with a preset voltage value, and the output power of the lower radio frequency power supply is adjusted to enable the direct current bias voltage to be equal to the preset voltage value. According to the invention, the output power is stable and does not fluctuate greatly, reliable power output is provided, and adverse effects on a process result are avoided.

The invention relates to a one-dosage type copper-molybdenum display etching solution and a preparation method and application thereof. The etching liquid comprises the following components in parts by weight: 5-15 parts of hydrogen peroxide; 10 to 15 parts of organic acid; 8-12 parts of an organic base; 0.008 to 0.07 part of a chelating agent; 0.002 to 0.07 part of a corrosion inhibitor; 0.04 to 0.3 part of a surfactant; 0.1 to 0.6 part of a hydrogen peroxide stabilizer; and 65-73 parts of ultrapure water. The chelating agent and the corrosion inhibitor in the etching solution are jointly adsorbed on the metal surface, the corrosion inhibitor and the chelating agent can form intermolecular hydrogen bonds to obtain a product with larger molecular volume, the product is adsorbed on the metal surface to generate a protective isolation layer, and meanwhile, the contained delocalized large pi bonds and nitrogen atoms can provide electron pairs for empty orbits of metal, so that the metal surface is protected. And coordination bonds are formed to be adsorbed on the metal surface to form a compact adsorption film, so that the corrosion of the metal is effectively inhibited, and the taper angle and the etching morphology of the etched metal are stabilized.

The invention provides a hafnium oxide etching solution. The etching solution comprises the following components in percentage by weight: 78-94% of dihydric alcohol, 5-20% of alcohol ether, 0.5-1.5% of hydrofluoric acid and 0.05-0.15% of an inhibitor. According to the hafnium oxide etching solution, the etching selection ratio of hafnium oxide (HfO2) to indium gallium zinc oxide (IGZO) is 1: 1, and good etching uniformity is achieved.

The application provides a method for removing titanium nitride and a wafer processing system. The wafer processing system comprises at least a wafer chuck, a chemical spraying unit and a heating unit. The wafer with a titanium nitride layer to be removed on the front surface is placed on the wafer chuck, and the front surface of the wafer to be processed faces the chemical spraying unit. The chemical spraying unit sprays the chemical liquid for removing the titanium nitride layer to the front surface of the wafer to be processed through the first nozzle according to the preset spraying timing. Meanwhile, the heating unit heats the back surface of the wafer to be processed during the removal of the titanium nitride layer. The temperature difference between the wafer and the chemical liquid can be quickly shortened, the etching rate is stabilized, the operation time is shortened, and the process window is expanded.

The invention relates to a buffer oxidation etching solution for thinning a quartz wafer. The buffer oxidation etching solution comprises 10%-20% of hydrofluoric acid, 15%-35% of ammonium fluoride, 0.1%-5% of an alcohol compound, 0.1%-2% of organic acid and the balance ultrapure water. The etching solution is used for maintaining a proper etching rate for the quartz wafer, the etched quartz wafer has good morphology and etching roughness, and triangular pyramid structure protrusions existing on the surface of the wafer after conventional BOE etching are improved.

The present invention provides a method for improving a photoresist process window for etching back. The method comprises providing a substrate, forming an active area on the surface of the substrate, forming a plurality of first structures, a plurality of second structures and a thin film layer in the active area, wherein the first structure is higher than the second structure, and the first structure has an upper structure and a lower structure; forming a carbon filling material layer with a first thickness and covering the plurality of first structures, the plurality of second structures and the thin film layer on the substrate; performing a first etching to remove the carbon filling material layer, so that the remaining thickness on the top surface of the first structure is a second thickness; performing a second etching to etch the upper structure and expose the lower structure, wherein the carbon filling material layer with the second thickness prevents the thin film layer from being etched. The present invention can simultaneously realize nickel silicide protection and defect-free, and form a process window.

The utility model discloses a wet etching spraying device which comprises a spraying head, the upper end of the spraying head is connected with a spraying pipe, the spraying pipe is connected with an etching liquid supply pipe, the etching liquid supply pipe is connected with a compressed air supply pipe, and the bottom of the spraying head is provided with spraying holes. And the etching uniformity is improved.

The application discloses a deep-groove polysilicon etching solution, which comprises an oxidizing agent, an inorganic acid, a pH regulator and a surfactant. The deep-groove polysilicon etching solution can efficiently etch polysilicon while ensuring the uniformity and smoothness of the etching surface, and can maximize the consistency of the etching of the upper and lower grooves and the smoothness of the surface. In the etching process, the inorganic acid ensures that the etching solution system is in an acidic environment, and the polysilicon is etched; the pH regulator avoids the large fluctuation of the pH of the etching solution, thereby ensuring the stability of the polysilicon etching process; and the surfactant reduces the surface tension of the etching solution, improves the wettability of the etching solution, ensures the consistency of the etching rate of the upper and lower grooves, and ensures the consistency of the groove aperture.

The invention belongs to the technical field of electronic chemicals, and particularly discloses molybdenum etching liquid and application thereof in nanoscale molybdenum etching. The etching liquid comprises an alkaline solution, an oxidizing agent, a corrosion inhibitor and a metal chelating agent. The alkaline environment of the etching solution has efficient dissolving capacity, so that a stable etching rate can be maintained; meanwhile, the corrosion inhibitor and the chelating agent are added into the etching solution, the corrosion inhibitor can form a layer of thin film on the metal surface in a physical adsorption or chemical bond mode, so that the etching rate of the etching solution to the metal is stabilized and regulated, and the metal chelating agent can form a plurality of coordinate bonds with metal ions in the solution; therefore, a stable annular structure is formed, and the etching liquid is more stable. The etching solution designed by the invention is simple in component, uniform in etching effect and controllable in etching rate, can be used for nano-scale molybdenum etching, and is also suitable for etching multiple metal film layers such as molybdenum alloy.

The invention relates to the field of semiconductor equipment, in particular to a liquid supply device and substrate processing equipment. The liquid supply device comprises: a liquid supply tank for accommodating a solution; the gas supply assembly comprises a first gas supply part, and the first gas supply part is used for providing oxygen-containing gas to the solution in the liquid supply tank; and the controller is electrically connected with the gas supply assembly and is configured to control the gas inlet time of the first gas supply part and the gas inlet amount of the first gas supply part, so that the oxygen content of the solution in the liquid supply tank reaches a first preset value within the gas inlet time and is kept stable. The problem that in the prior art, due to the fact that the oxygen content in the solution changes, the etching rate changes, and then the etching shape is affected is solved.

The present disclosure provides an etching solution, a GaN material etching method and a gallium nitride transistor manufacturing method, and belongs to the technical field of semiconductors. The etching solution comprises a tetramethylammonium hydroxide solution and an oxidizing agent, the concentration of the tetramethylammonium hydroxide solution is 0.1-2.0 mol / L, and the concentration of the oxidizing agent is 0.01-0.5 mol / L. The present disclosure can improve the etching effect of GaN materials.

The invention discloses a high-performance buffer oxide etching solution and application thereof. The high-performance buffer oxide etching solution is prepared from the following raw materials in percentage by weight: 0.1-1 wt% of hydrofluoric acid, 15-22 wt% of ammonium fluoride, 0.05-0.2 wt% of organic alkali, 0.03-0.5 wt% of a compound surfactant and the balance of water, the organic alkali is a quinoline amine active agent, and the compound surfactant is composed of an anionic surfactant and a cationic surfactant according to a mass ratio of 1: 5-10: 1. The high-performance buffer oxide etching solution can completely etch the lateral annular silicon oxide, can inhibit the corrosion of the nickel-silicon layer, can meet the requirement of high selection ratio of the silicon oxide layer to the nickel-silicon layer in an advanced process, and has a wide application prospect.

The present invention specifically relates to a TiN and Ti metal film etching solution and a preparation method thereof. The etching solution mainly comprises an oxidant, a stabilizer, an ammonium salt, an oxygen promoter, a surfactant and acetic acid. The etching solution uses an oxidant to oxidize TiN and Ti to form oxides for etching; the ammonium salt can be used as a corrosion inhibitor to complex with metal ions; an inorganic acid or an organic acid is used as a secondary oxidant to increase the oxidizing property of the oxidant and provide sufficient hydrogen ions, so that the concentration of the oxidant is maintained at a high level, the etching rate is maintained stable, and the use / storage life of the etching solution is extended; the surfactant can reduce the surface tension of the solution and promote the etching uniformity and integrity of TiN and Ti. The etching solution used according to the method of the present invention can ensure that the etching rates of the TiN metal film and the Ti metal film are basically the same (the difference between the etching rates of the two is ≤17 Å / min).

The invention provides a three-step ITO-Ag-ITO etching solution, and a preparation method and application thereof. The three-step ITO-Ag-ITO etching solution comprises the following components by weight: 2-10 parts of an organic acid; 1-5 parts of inorganic acid; 0.5 to 3 parts of an aldehyde compound; 1-5 parts of sulfur-containing organic acid sodium salt; and 30-50 parts of ultrapure water. The invention further discloses a preparation method of the etching solution and application of the etching solution in the field of ITO-Ag-ITO composite layer etching and / or the field of TiAlTi layer etching and morphology modification in the through hole process. The etching solution is stable in etching rate, has no damage to an insulating layer and photoresist, can be used in the manufacturing process of OLED pixel electrodes, and is used for solving the problem that CD-loss of an Ag layer is too large in the etching process of three-step ITO-Ag-ITO; and hydrofluoric acid is introduced into the system, so that etching and morphology modification of the TiAlTi layer in a through hole process can be compatible.

The invention discloses a Cu-MTD etching solution for liquid crystal panels and a preparation method thereof, belonging to the technical field of copper etching solutions, comprising the following components by weight: 5-18% hydrogen peroxide, 0.01-1% stabilizer, 1-12% organic acid, 1-10% organic base, 0.01-2% corrosion inhibitor, and the rest being ultrapure water. The copper etching solution has the advantages of strong compatibility, stable etching efficiency and good etching effect, and can effectively solve the problems in the prior art.

The invention relates to the technical field of precision metal processing, in particular to an etching method for a stainless steel cooling fin of a switch. The etching method of the stainless steel radiating fin of the switch comprises the following steps: S1, deoiling, cleaning and activating; s2, silk-screen printing of photosensitive ink; s3, the stainless steel substrate treated in the step S2 is put into chemical etching liquid to be subjected to etching treatment; and S4, the etched stainless steel substrate is soaked in a sodium hydroxide solution with the temperature being 80 DEG C and the mass concentration being 5% to remove the surface photosensitive ink, then deionized water is adopted for cleaning, drying treatment is conducted, and the stainless steel cooling fin of the switch is obtained. According to the etching method disclosed by the invention, by accurately controlling the procedures of oil removal cleaning, activation, photosensitive ink screen printing and surface etching, efficient and accurate etching of the stainless steel radiating fin of the switch is realized, so that the width error of the etching groove is less than or equal to 0.005 mm, the edge flatness of the groove is high, and the depth error of the etching groove is less than or equal to 0.01 mm.

The invention provides an acid tank type wet etching method, which comprises a relation curve establishment step, an etching rate budgeting step, a first judgment step, a second judgment step and a third judgment step, and is characterized in that for different types of products, relation curves of corresponding etching rates along with the change of the running amount are established, and before the running amount, the corresponding etching rates are calculated; for multiple groups of to-be-run products on the line, according to the type and run quantity of each group of to-be-run products, the corresponding etching rate of each group of to-be-run products after run is calculated based on the corresponding relation curve and the current acid tank silicon oxide etching rate, and then the etching rate of each group of to-be-run products after run is calculated according to the range of the current acid tank silicon oxide etching rate. And selecting one group of products to be transferred on the line for transferring or small acid exchange, and finally enabling the etching rate of the acid tank to be stabilized near the target etching rate. According to the method, even if different types of products run out of the acid tank, the etching rate of the acid tank can still be kept stable, the stability of the production process can be improved, and the product quality is guaranteed.

The invention discloses an ITO (Indium Tin Oxide) etching solution as well as a preparation method and a use method thereof, and the ITO etching solution comprises the following components in percentage by mass: 1.0 wt%-5.00 wt% of boric acid, 5.0 wt%-20 wt% of silicic acid, 20 wt%-30 wt% of 1-hydroxyethylidene-1, 1-diphosphonic acid, 0.1 wt%-0.5 wt% of a corrosion inhibitor and the balance of water. The ITO etching solution provided by the invention is relatively stable in ITO etching rate, and has no corrosion to copper or no side etching phenomenon of copper.

The invention relates to an etching solution for TiAlTi substrates with different thicknesses as well as a preparation method and application of the etching solution. The etching liquid for the TiAlTi substrates with different thicknesses comprises the following components in parts by weight: 10-20 parts of organic acid; 40-50 parts of inorganic acid; 10-20 parts of an organic solvent; 0.5-1 part of an additive; and 10-25 parts of ultrapure water. According to the invention, 1-(3-((4-(2-fluorophenyl) piperazine-1-yl) methyl)-4-methoxyphenyl)-2, 3, 4, 9-tetrahydro-1H-pyridino [3, 4-B] indole-3-carboxylic acid is combined with another organic acid, and the 1-(3-((4-(2-fluorophenyl) piperazine-1-yl) methyl)-4-methoxyphenyl)-2, 3, 4, 9-tetrahydro-1H-pyridino [3, 4-B] indole-3-carboxylic acid is used as a catalyst for preparing the 2, 3, 4, 9-tetrahydro-1H-pyridino [3, 4-B] indole-3-carboxylic acid derivative. F ions provided by one kind of organic acid and 1-(3-((4-(2-fluorophenyl) piperazin-1-yl) methyl)-4-methoxyphenyl)-2, 3, 4, 9-tetrahydro-1H-pyrido [3, 4-B] indole-3-carboxylic acid can be used for etching titanium, and benzene rings contained in the other kind of organic acid and 1-(3-((4-(2-fluorophenyl) piperazin-1-yl) methyl)-4-methoxyphenyl)-2, 3, 4, 9-tetrahydro-1H-pyrido [3, 4-B] indole-3-carboxylic acid can be adsorbed on a metal surface to uniformly etch a metal layer.

The invention belongs to the technical field of etching, and particularly discloses a silver film etching solution which comprises the following raw materials in percentage by mass: 30-40% of phosphoric acid, 5-10% of nitric acid, 5-10% of acetic acid, 0.01-0.05% of a porphyrin compound, 0.01-0.05% of a guanidine derivative, 5-10% of a dispersing agent, 1-5% of a stabilizer and the balance of water. The silver film etching solution provided by the invention has a stable etching rate, and can well solve the problems of silver residue, silver after-tack and the like at the same time.