63results about How to "Stable etch rate" patented technology

The invention relates to a reduction etching liquid for base plates of sheet glass, components percentage by weight of which comprise: hydrofluoric acid holding 5-25%, strong acid holding 5-30% and pure water holding 45-90%. The reduction etching liquid for base plates of sheet glass of the invention is less in volatilization and toxicity. The using rate of the etching liquid is high and etching speed is rapid and stable. Costs of waste liquor treatment and subsequent treatment are low. The etching effect is excellent. Therefore, the invention has wide prospects for application.

The present invention discloses a high generation tablet personal computer ITO etching solution, which comprises, by weight, 4-16% of sulfuric acid, 7-22% of nitric acid, 0.1-10% of acetic acid, 0.01-5% of an additive, and the balance of water, wherein the additive contains an anionic gemini surfactant, and the anionic gemini surfactant is a phosphate type gemini surfactant and/or phosphate salt type gemini surfactant. According to the present invention, according to the ITO etching system using the sulfuric acid/nitric acid/acetic acid three-acid system, the gemini surfactant is added, such that the problems of acid mist volatilization and nitric acid decomposition due to local etching surface temperature increase during the ITO etching process are solved, the work stability of the etching solution is improved, and the etched line has characteristics of clear edge, no lateral etching, and no pinhole and gap generation.

The invention discloses a copper seed etching solution used for wafer level package. The etching solution comprises the following components, 40-60g/L of hydrogen peroxide, 5-35g/L of inorganic acid,5-35g/L of organic acid, 1-30g/L of copper ions, 1-2g/L of chloride ions and 1-2g/L of surface active agents according to the concentration proportion. The components are mixed in proportion, the mixing reaction temperature is between 30 DEG C and 50 DEG C, the reaction time is 1s-400s, and the copper seed etching solution is formed after mixing. Chelating agents formed by mixing the hydrogen peroxide and the inorganic acid and the copper ions can be subjected to chelation to form water-soluble complexes, so that equilibrium is reached; and the chloride ions play a role in maintaining the PH value of a system in the solution, maintains charge balance of the system in the etching process and prolongs the service life of the etching solution. The copper seed etching solution has the characteristics of being stable in performance, suitable for superfine circuits, small in lateral erosion and hardly corrosive to copper and aluminum.

The invention discloses an additive for acidic etching solution and the acidic etching solution. The additive includes, by mass, 1-200 parts of a nonionic surfactant and 1-200 parts of a stabilizer, wherein the stabilizer is at least one of sulfur-containing urea, mercaptan and bromides. The acidic etching solution comprises an etching basic liquid and the additive. The acidic etching solution canbe used for producing printed circuit boards, which has thick copper layer (copper thickness being 70 [mu]m or higher) or large to-be-etched area (to-be-etched area being more than 50%, especially whole-plate etching), and is free of instable or low speed during the etching. In addition, the additive can be used for directly producing bulk copper plates in a circuit board etching process withoutextra addition of an electrolysis additive.

The invention relates to the technical field of manufacturing of printed circuit boards, in particular to metal film etching liquid and a method for etching a printed circuit board. The metal film etching liquid is prepared from, by mass percent, 3%-16% of FeCl3, 4%-17% of HCl, 0.5%-3.12% of NaClO3, 0.001%-0.18% of a surface active agent and the balance water. By means of the metal film etching liquid prepared through the formula and used for etching the printed circuit board, it can be guaranteed that a metal film of the printed circuit board is etched more finely, and the phenomenon of poor etching cannot happen; and the metal film etching liquid and the method are suitable for manufacturing of metal film forming circuit patterns of printed circuit boards of semiconductor devices, liquid crystal display devices, touch control products, IC cards and the like and have wider application prospects.

The invention discloses a metal ion concentration regulation device and method, and etching equipment. The metal ion concentration regulation device comprises a liquid supply pipeline, a metal ion regulation system, a metal ion detection system and a control circuit. The metal ion regulation system and the metal ion detection system are sequentially in the liquid supply pipeline in the direction of etching liquid flowing through the liquid supply pipeline and both communicate with the liquid supply pipeline. The control circuit is electrically connected with the metal ion regulation system and the metal ion detection system and is used for controlling the metal ion regulation system to regulate the concentration of metal ions in the etching liquid according to the current metal ion concentration, transmitted by the metal ion detection system, of the etching liquid and preset metal ion concentration upper and lower threshold values. Through cooperative operation of all the components, the metal ion concentration regulation device conducts regulation on the concentration of metal ions in the etching process, so that the etching rate tends to be stable, the etching effect is improved, and the probability of short circuiting, disconnection and the like of metal conducting wires is reduced.

The present invention relates to a composition for the removal of so-called “sidewall residues” from metal surfaces, in particular from aluminium or aluminium-containing surfaces, in particular from aluminium or aluminium-containing surfaces, during the production of semiconductor elements.

The invention relates to a copper etching solution with high stability and long etching life. The etching solution is composed of hydrogen peroxide, organic acid, a secondary oxidant, chelating agentsand a pH regulator. In the etching solution, the synergistic effect of the hydrogen peroxide and the secondary oxidant overcomes the defects of low etching rate, too fast oxidant consumption, short etching life and the like; citric acid and other organic acid can promote the dissolution process of copper oxide in the etching solution, and meanwhile, the organic acid can also be used as a pH buffer agent to keep the pH of the etching solution changing in a small range and improve the stability; and a variety of chelating agents are combined for use, different coordination atoms are fully and quickly combined with divalent copper ions to generate a more stable metal chelate, the copper ions are prevented from promoting the decomposition of the hydrogen peroxide, and the service life of thecopper etching solution is prolonged. The copper etching solution provided by the invention can keep stable and uniform in a long etching time, the service life of the etching solution is prolonged, and the etching cost is reduced.

A novel ferric trichloride etching solution of the invention is a novel monad liquid etching technical product based on a traditional [ferric trichloride + hydrochloric acid] etching system and with acidic copper chloride etching as the leading factor. By combining advantages of two copper etching oxidants ferric trichloride and copper chloride, etching rate is stabilized and etching quality is enhanced. Production cost is reduced, and the environmental protection problem generated by an acidic copper chloride and oxidizing agent etching technology widely applied nowadays is overcome.

The invention relates to manufacturing of a silicon based mold in mold pressing manufacturing technologies, and the method is used for machining a three-dimensional shape with a continuously variable embossment structure on a silicon base. The main machining steps include: 1. making a female die with a continuous curved surface appearance embossment structure on a metal material by a single-point diamond turning technology; 2. performing spin coating of a layer of polymer film on a silicon substrate; 3. transferring the embossment structure on the die to the polymer by a hot stamping technology; and 4. transferring the embossment structure on the glue to the silicon material at a same proportion through plasma etching, thus obtaining the silicon based mold. The method provided by the invention has the advantages of controllable appearance, simple process, fast speed, and good repeatability.

The invention discloses etching solution of a low doped silicon electrode. The etching solution comprises the following main components according to a total weight of the etching :45-65% of sulfuric acid, 1-10% of nitric acid, 1-10% of ammonium fluoride, 1-10% of ammonia chloride, and 5-52% of ultrapure water. The etching solution is capable of, through using the nitric acid with low content, reducing a whole etching rate; through using the ammonium fluoride to replace hydrofluoric acid, guaranteeing the stable etching rate; and adding the ammonia chloride as a replenisher of an ammonium radical ion, generating intensive small bubbles in an etching process, and conveniently controlling roughness on the surface of a silicon electrode. The etching solution is capable of completely removingdamage caused by grinding, stable in etching rate, uniform in etching surface, and controllable in surface roughness.

The invention relates to the field of microelectronics, in particular to a pipeline system and method for improving the stability of an etching speed selectivity ratio. According to the pipeline system and method for improving the stability of the etching speed selectivity ratio, disclosed by the invention, an auxiliary trench is additionally arranged and is connected with a plurality of process trenches to form a circulation, thereby etching solutions in various process trenches tend to be identical and the etching speeds tend to be identical; in addition, the volume of the etching solution participating in the circulation is increased and the content change of SiO2 is relatively reduced, thereby the etching speed selectivity ratio is relatively stable; acid change setting is omitted anda small amount of etching solution is drained at set intervals or after a certain amount of silicon chips are produced; and the etching solution is supplemented from the auxiliary trench, and therebythe problem of greater damage to an oxidation film caused when the content of SiO2 in the novel etching solution is relatively and excessively high and silicon nitride is etched is solved.

The invention discloses a single acid trace adding device which consists of a etching unit and an adding monitor unit. The etching unit includes a etch room and a acid blending socket; the monitor unit includes a single acid test device, a single acid compensation calculator and a single acid adding socket; the test device is connected with the blending socket, the calculator is connected with the test device and the adding socket while the adding socket is connected with the blending socket; the blending socket, test device, calculator and the adding socket are connected in turn end to end forming the close single acid adding circuit.

The invention discloses an etching solution additive for AMOLED substrate glass thinning, which is composed of the following components according to weight percentage: 17-21% of hydrofluoric acid, 8-14% of phosphoric acid, 15-24% of nitric acid, and 7-7% of sodium hypochlorite 12%, brightener 6-13%, leveling agent 5-9%, surfactant 5-10%, solvent 38-54%. The etching solution prepared by the additive of the present invention has long service life and stable process; the etching solution prepared by the additive of the present invention, the etched plate surface is smooth and smooth, and no subsequent processing is required; the etching solution prepared by the additive of the present invention can stabilize the etching rate and improve the etching coefficient ratio and uniformity, and the addition of surfactants can increase the etching speed; effectively reduce the amount of hydrochloric acid used, which is beneficial to production efficiency in the process, and is economical and practical, the preparation method is simple, and no harmful gas is generated during the etching process.

The invention provides etching liquid used for a thick aluminum circuit board, and a method. The etching liquid comprises the following main ingredients: concentrated hydrochloric acid, acetic acid, hydrofluoric acid and the balance of aluminum ions. The method specifically comprises the following steps that: laminating one surface of an aluminum foil with one layer of protection film, and laminating the other surface of the aluminum foil with a dry film; according to a preset condition, carrying out selective exposure on different positions of the dry film, removing the dry films on unexposedpositions to expose the aluminum foils under the dry films; and dissolving through the etching liquid to remove the exposed aluminum foils, and removing the dry films on the aluminum foils to obtainthe etched thick aluminum circuit board which needs to be prepared. By use of the etching liquid formed by hydrochloric acid, phosphoric acid, acetic acid and hydrofluoric acid at a certain ratio, thick aluminum etching can be realized, in addition, the acetic acid and the phosphoric acid added in the etching liquid can effectively improve the linearity of the circuit, the etching factor of the circuit is improved through the added hydrofluoric acid, an etching rate is stabilized through added aluminum chloride or dissolved aluminum, and therefore, thick aluminum etching meets use requirements.