3results about How to "Stable etch rate" patented technology

The application discloses a deep-groove polysilicon etching solution, which comprises an oxidizing agent, an inorganic acid, a pH regulator and a surfactant. The deep-groove polysilicon etching solution can efficiently etch polysilicon while ensuring the uniformity and smoothness of the etching surface, and can maximize the consistency of the etching of the upper and lower grooves and the smoothness of the surface. In the etching process, the inorganic acid ensures that the etching solution system is in an acidic environment, and the polysilicon is etched; the pH regulator avoids the large fluctuation of the pH of the etching solution, thereby ensuring the stability of the polysilicon etching process; and the surfactant reduces the surface tension of the etching solution, improves the wettability of the etching solution, ensures the consistency of the etching rate of the upper and lower grooves, and ensures the consistency of the groove aperture.

The invention relates to the field of semiconductor equipment, in particular to a liquid supply device and substrate processing equipment. The liquid supply device comprises: a liquid supply tank for accommodating a solution; the gas supply assembly comprises a first gas supply part, and the first gas supply part is used for providing oxygen-containing gas to the solution in the liquid supply tank; and the controller is electrically connected with the gas supply assembly and is configured to control the gas inlet time of the first gas supply part and the gas inlet amount of the first gas supply part, so that the oxygen content of the solution in the liquid supply tank reaches a first preset value within the gas inlet time and is kept stable. The problem that in the prior art, due to the fact that the oxygen content in the solution changes, the etching rate changes, and then the etching shape is affected is solved.

The present disclosure provides an etching solution, a GaN material etching method and a gallium nitride transistor manufacturing method, and belongs to the technical field of semiconductors. The etching solution comprises a tetramethylammonium hydroxide solution and an oxidizing agent, the concentration of the tetramethylammonium hydroxide solution is 0.1-2.0 mol / L, and the concentration of the oxidizing agent is 0.01-0.5 mol / L. The present disclosure can improve the etching effect of GaN materials.