High generation tablet personal computer ITO etching solution

Abstract

The present invention discloses a high generation tablet personal computer ITO etching solution, which comprises, by weight, 4-16% of sulfuric acid, 7-22% of nitric acid, 0.1-10% of acetic acid, 0.01-5% of an additive, and the balance of water, wherein the additive contains an anionic gemini surfactant, and the anionic gemini surfactant is a phosphate type gemini surfactant and / or phosphate salt type gemini surfactant. According to the present invention, according to the ITO etching system using the sulfuric acid / nitric acid / acetic acid three-acid system, the gemini surfactant is added, such that the problems of acid mist volatilization and nitric acid decomposition due to local etching surface temperature increase during the ITO etching process are solved, the work stability of the etching solution is improved, and the etched line has characteristics of clear edge, no lateral etching, and no pinhole and gap generation.

Description

technical field [0001] The invention relates to an etchant composition for etching an indium tin oxide conductive film ITO, in particular to an ITO etchant for a high-generation flat panel. Background technique [0002] Indium tin oxide (ITO) conductive film refers to the product obtained by sputtering a transparent ITO conductive film coating on a transparent organic film material by magnetron sputtering and then undergoing high-temperature annealing treatment. [0003] In the prior art, the main types of TIO etching solution and related patents are as follows: CN201210206045.5 discloses an ITO etching solution mainly composed of hydrochloric acid and nitric acid, that is, aqua regia etching solution, and the etching reaction of this etching solution is relatively severe , the etching process is difficult to accurately control, both hydrochloric acid and nitric acid are volatile, and as the etching time prolongs, the effective acid components of the etching solution will ch...

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Problems solved by technology

[0003] In the prior art, the main types of TIO etching solution and related patents are as follows: CN201210206045.5 discloses an ITO etching solution mainly composed of hydrochloric acid and nitric acid, that is, aqua regia etching solution, and the etching reaction of this etching solution is relatively severe , the etching process is difficult to accurately control, both hydrochloric acid and nitric acid are volatile, and as the etching time prolongs, the effective acid components of the etching solution will change, affecting the stability of the etching process; CN201010139056.7, CN201410563719.6 are disclosed An ITO etchant with oxalic acid as the main acid was developed. The polycrystalline ITO part cannot be etched with oxalic acid-based etchant. Etching under low temperature conditions will cause ITO residue, which will affect the short circuit of the common electrode inside the pixel. Large-area ITO Residues will also form a "group glow" phenomenon, making the product scrapped; CN200910022456.7 discloses a kind of etching solution with hydrochloric acid and ferric chloride as the main body, although the etching solution of ferric chloride hydrochloric acid can be controlled by controlling the concentration of hydrochloric acid Etching rate, but side etching amount is large

Improved technical solution In order to improve the residue removal ability, indium solubility and defoaming performance of the etching solution, metal ion complexing agents and surfactants are added correspondingly, such as surfactants are alkylphenol polyoxyethylene ethers, protonated The corrosion inhibitor, aliphatic polyvinyl ether or polyvinyl ester, and the metal ion complexing agent use organic polyphosphoric acid, but the above-mentioned surfactants are more suitable in the oxalic acid-based etching solution, and the nitric acid in the nitric acid-based ITO etching solution is easy to decompose. The etching of metal is an exothermic process. Therefore, in order to cause the temperature of the etching interface to be high, nitrogen dioxide is decomposed or volatilized in the form of acid mist, which leads to unstable pH value in the etching solution and affects the etching degree of the ITO film. larger

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