Copper etching solution with long etching life

Abstract

The invention relates to a copper etching solution with high stability and long etching life. The etching solution is composed of hydrogen peroxide, organic acid, a secondary oxidant, chelating agentsand a pH regulator. In the etching solution, the synergistic effect of the hydrogen peroxide and the secondary oxidant overcomes the defects of low etching rate, too fast oxidant consumption, short etching life and the like; citric acid and other organic acid can promote the dissolution process of copper oxide in the etching solution, and meanwhile, the organic acid can also be used as a pH buffer agent to keep the pH of the etching solution changing in a small range and improve the stability; and a variety of chelating agents are combined for use, different coordination atoms are fully and quickly combined with divalent copper ions to generate a more stable metal chelate, the copper ions are prevented from promoting the decomposition of the hydrogen peroxide, and the service life of thecopper etching solution is prolonged. The copper etching solution provided by the invention can keep stable and uniform in a long etching time, the service life of the etching solution is prolonged, and the etching cost is reduced.

Description

technical field

[0001] The invention relates to the technical field of electronic chemicals in the liquid crystal display thin film transistor industry, in particular to a copper etching solution with high stability and long etching life and its metal etching as electronic chemicals in the panel industry. Background technique

[0002] In the panel industry, etching is an indispensable process, and wet etching has been widely used for a long time because of its advantages such as fast etching speed, high selectivity, and simple process. Wet etching is a process in which the target material is etched and removed through a chemical reaction between the target material and the etchant. In recent years, the scale of the panel industry has continued to expand, and the update frequency has continued to accelerate. In order to adapt to the constantly updated display manufacturing technology, the metal wiring in the display has gradually changed from aluminum wires to those with lowe...

Examples

Embodiment 1

[0028] Embodiment 1 provides the copper etchant of high etching rate and high stability, specifically:

[0029] The copper etching solution is composed of hydrogen peroxide, citric acid, sodium persulfate, 2,2-bipyridine, sodium malonate, imidazole and deionized water.

[0030] Wherein, the massfraction of hydrogen peroxide is 9%; The massfraction of citric acid is 6%; The massfraction of sodium persulfate is 1%; The massfraction of 2,2-bipyridine is 0.8%; The massfraction of sodium malonate is 4%; the mass fraction of imidazole is 3%, and the balance is deionized water.

[0031] Heat the above-prepared copper etching solution to 35°C, conduct an etching experiment on metallic copper on a glass substrate, record the time required for a certain thickness of copper to be etched away, and calculate the etching rate. At the same time, gradually add copper powder to the etching solution to simulate the etching process, and then test the etching rate of the etching solution on the ...

Embodiment 2

[0033] Embodiment 2 provides the copper etchant of high etching rate and high stability, specifically:

[0034] The copper etching solution is composed of hydrogen peroxide, citric acid, sodium persulfate, 2,2-bipyridyl, sodium formate, imidazole and deionized water.

[0035] Wherein, the mass fraction of hydrogen peroxide is 9%; the mass fraction of citric acid is 6%; the mass fraction of sodium persulfate is 1%; the mass fraction of 2,2-bipyridine is 0.8%; the mass fraction of sodium formate is 4%; The mass fraction of imidazole is 3%, and the balance is deionized water.

[0036] Heat the above-prepared copper etching solution to 35°C, conduct an etching experiment on metallic copper on a glass substrate, record the time required for a certain thickness of copper to be etched away, and calculate the etching rate. At the same time, gradually add copper powder to the etching solution to simulate the etching process, and then test the etching rate of the etching solution on th...

Embodiment 3

[0038] Embodiment 3 provides the copper etchant of high etching rate and high stability, specifically:

[0039] The copper etching solution is composed of hydrogen peroxide, citric acid, sodium persulfate, 2,2-bipyridyl, ammonium formate, imidazole and deionized water.

[0040] Wherein, the mass fraction of hydrogen peroxide is 9%; the mass fraction of citric acid is 6%; the mass fraction of sodium persulfate is 1%; the mass fraction of 2,2-bipyridine is 0.8%; the mass fraction of ammonium formate is 4% ; The mass fraction of imidazole is 3%, and the balance is deionized water.

[0041] Heat the above-prepared copper etching solution to 35°C, conduct an etching experiment on metallic copper on a glass substrate, record the time required for a certain thickness of copper to be etched away, and calculate the etching rate. At the same time, gradually add copper powder to the etching solution to simulate the etching process, and then test the etching rate of the etching solution ...

technical field

[0001] The invention relates to the technical field of electronic chemicals in the liquid crystal display thin film transistor industry, in particular to a copper etching solution with high stability and long etching life and its metal etching as electronic chemicals in the panel industry. Background technique

[0002] In the panel industry, etching is an indispensable process, and wet etching has been widely used for a long time because of its advantages such as fast etching speed, high selectivity, and simple process. Wet etching is a process in which the target material is etched and removed through a chemical reaction between the target material and the etchant. In recent years, the scale of the panel industry has continued to expand, and the update frequency has continued to accelerate. In order to adapt to the constantly updated display manufacturing technology, the metal wiring in the display has gradually changed from aluminum wires to those with lowe...

Examples

Embodiment 1

[0028] Embodiment 1 provides the copper etchant of high etching rate and high stability, specifically:

[0029] The copper etching solution is composed of hydrogen peroxide, citric acid, sodium persulfate, 2,2-bipyridine, sodium malonate, imidazole and deionized water.

[0030] Wherein, the massfraction of hydrogen peroxide is 9%; The massfraction of citric acid is 6%; The massfraction of sodium persulfate is 1%; The massfraction of 2,2-bipyridine is 0.8%; The massfraction of sodium malonate is 4%; the mass fraction of imidazole is 3%, and the balance is deionized water.

[0031] Heat the above-prepared copper etching solution to 35°C, conduct an etching experiment on metallic copper on a glass substrate, record the time required for a certain thickness of copper to be etched away, and calculate the etching rate. At the same time, gradually add copper powder to the etching solution to simulate the etching process, and then test the etching rate of the etching solution on the ...

Embodiment 2

[0033] Embodiment 2 provides the copper etchant of high etching rate and high stability, specifically:

[0034] The copper etching solution is composed of hydrogen peroxide, citric acid, sodium persulfate, 2,2-bipyridyl, sodium formate, imidazole and deionized water.

[0035] Wherein, the mass fraction of hydrogen peroxide is 9%; the mass fraction of citric acid is 6%; the mass fraction of sodium persulfate is 1%; the mass fraction of 2,2-bipyridine is 0.8%; the mass fraction of sodium formate is 4%; The mass fraction of imidazole is 3%, and the balance is deionized water.

[0036] Heat the above-prepared copper etching solution to 35°C, conduct an etching experiment on metallic copper on a glass substrate, record the time required for a certain thickness of copper to be etched away, and calculate the etching rate. At the same time, gradually add copper powder to the etching solution to simulate the etching process, and then test the etching rate of the etching solution on th...

Embodiment 3

[0038] Embodiment 3 provides the copper etchant of high etching rate and high stability, specifically:

[0039] The copper etching solution is composed of hydrogen peroxide, citric acid, sodium persulfate, 2,2-bipyridyl, ammonium formate, imidazole and deionized water.

[0040] Wherein, the mass fraction of hydrogen peroxide is 9%; the mass fraction of citric acid is 6%; the mass fraction of sodium persulfate is 1%; the mass fraction of 2,2-bipyridine is 0.8%; the mass fraction of ammonium formate is 4% ; The mass fraction of imidazole is 3%, and the balance is deionized water.

[0041] Heat the above-prepared copper etching solution to 35°C, conduct an etching experiment on metallic copper on a glass substrate, record the time required for a certain thickness of copper to be etched away, and calculate the etching rate. At the same time, gradually add copper powder to the etching solution to simulate the etching process, and then test the etching rate of the etching solution ...

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