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Laminated structure, method for manufacturing the same, and light-emitting device

A technology of layered structure and light-emitting device, which is applied in the direction of multi-layer circuit manufacturing, chemical instruments and methods, coating, etc., can solve problems such as limited effect

Active Publication Date: 2017-04-12
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the direct activation of the metal surface can only slightly improve the adhesion of the parylene film to the metal surface, and the effect is still limited

Method used

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  • Laminated structure, method for manufacturing the same, and light-emitting device
  • Laminated structure, method for manufacturing the same, and light-emitting device
  • Laminated structure, method for manufacturing the same, and light-emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Place the SUS 304 stainless steel substrate in the deposition chamber, and keep the chamber in a vacuum state. Next, Ar was introduced at a flow rate of 100 sccm to maintain the chamber pressure at 60 mtorr, and the surface of the stainless steel substrate was treated with 100 W 13.56 MHz radio frequency plasma for about 1 min. Next, HMDSO was injected into the deposition chamber with a flow rate of 100 sccm, and at a pressure of 40 mtorr, a 100 W 13.56 MHz radio frequency plasma was used for 10 min to form an interposer layer. The film thickness of the interposer is about 120nm, and the ratio of Si-C bonds to Si-O bonds is about 0.3.

[0035] Put 10 g of solid powder of p-xylene dimer in an evaporation chamber and heat to 150° C. to sublimate p-xylene into a gaseous state. Next, gaseous p-xylene is passed into a thermal cracking chamber with a temperature of about 650° C. for pyrolysis, and the pyrolyzed p-xylene monomer is sent to a deposition chamber with a temperat...

Embodiment 2

[0037] The same procedure as in Example 1 was carried out, but the flow rate of HMDSO was 150 sccm. In this embodiment, the ratio of Si-C bonds to Si-O bonds in the interposer is about 0.5.

Embodiment 3

[0039] The same steps as in Example 1 were carried out, but the flow rate of HMDSO was 200 sccm. In this embodiment, the ratio of Si-C bonds to Si-O bonds in the interposer is about 0.8.

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Abstract

The disclosure relates to a laminated structure, comprising: a substrate having a surface; a parylene film disposed on the surface of the substrate; and an interposer disposed on the surface and the parylene film In between, the intermediary layer is covalently bonded to the substrate and the parylene film, and the ratio of Si-C bonds to Si-X bonds in the intermediary layer is 0.3-0.8, wherein X is O or N. In addition, the present disclosure also provides a manufacturing method of the above-mentioned stacked structure and its application in a light-emitting device.

Description

technical field [0001] The present disclosure relates to electronic components, and more particularly to a laminated structure including a parylene film and a manufacturing method thereof. Background technique [0002] Poly(p-xylylene) is an organic polymer material, which is often used as a material for insulating layers of electronic components due to its properties of acid and alkali resistance, high transparency and high dielectric constant. Most of the substrates used in electronic components are substrates with metal surfaces or substrates with semiconductor surfaces, such as printed circuit board (PCB) substrates with copper layers (or copper lines) on the surface. Whether it is a substrate with a metal surface or a substrate with a semiconductor surface, the surface is an inorganic material, and its properties are far different from those of organic polymer materials. Therefore, if the parylene film is directly plated on the metal or semiconductor surface, it is a h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05K1/03H05K1/05H05K3/46H10K99/00
CPCC09D183/04B32B17/1055Y10T428/265H10K50/844B32B7/12H10K50/84H10K85/111H10K2102/351C08K5/5419C09D165/04
Inventor 陈泰宏张均豪赖丰文林昆蔚
Owner IND TECH RES INST
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