Plasma-enhanced chemical vapor deposition device for preparing low dielectric constant materials

Abstract

The invention discloses a plasma enhancing chemical vapor deposition device for preparing low-dielectric-constant materials. The device comprises a furnace body and a liquid source jet mechanism arranged on one side of the furnace body. A sensing coil is wound at the front half section of the furnace body. The sensing coil is connected to a 13.36 MHz radio-frequency power supply and a matcher in sequence. The liquid source jet mechanism comprises a voltage-resisting stainless steel kettle, a first voltage-resisting gas mixing tank and a second voltage-resisting gas mixing tank. The other end of the first voltage-resisting gas mixing tank and one end of the voltage-resisting stainless steel kettle are connected through a pipeline provided with a pushing needle valve. The other end of the voltage-resisting stainless steel kettle is connected to a first nozzle through a pipeline provided with a pushing needle valve and a first mass flow meter. One end of the second voltage-resisting gas mixing tank is provided with a third gas inlet pipe and a fourth gas inlet pipe in a connecting mode. The other end of the second voltage-resisting gas mixing tank is connected to a second nozzle. The plasma enhancing chemical vapor deposition device is simple in structure, convenient to operate and low in manufacturing and using cost, the fact that a liquid-state liquid source with the flow and the speed uneasy to control is converted to gas flow with the flow and the speed easy to control, and accordingly a thin film dielectric constant value can be adjusted and controlled conveniently and accurately.

Description

technical field [0001] The invention relates to a plasma-enhanced chemical vapor deposition device for preparing low dielectric constant materials, belonging to the technical field of semiconductors. Background technique [0002] Inside the integrated circuit, different devices are mainly connected to each other by metal wires. With the continuous shrinking of the integrated circuit manufacturing process, the distance and spacing between the interconnecting lines are not shrinking, and the resulting interconnection resistance (R ) and the parasitic effects of capacitance (C) are becoming more and more obvious. In order to reduce the delay caused by RC and further improve the performance of integrated circuit chips, materials with low dielectric constant (low-k) characteristics have been continuously proposed and widely studied. [0003] There are two methods commonly used to prepare thin films of low dielectric constant (low-k) materials: vapor deposition (CVD) and spin-coa...

AI Technical Summary

Problems solved by technology

However, the materials usually used as raw materials for vapor deposition are usually gaseous carbon-containing gases such as methane, ethylene, acetylene, and silicon-containing gases such as silane, which are not conducive to storage, transportation and carrying because they are gaseous under normal pressure.

With the development of the semiconductor industry, more and more attention has been paid to liquid source materials. However, it is still difficult to use liquid source materials to prepare thin films of low dielectric constant materials that meet the requirements of semiconductor technology.

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