Making method for defect detection wafer used in polysilicon chemical mechanical grinding process
A technology of chemical machinery and grinding process, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, electrical components, etc., and can solve problems such as data interference of testers
Inactive Publication Date: 2014-06-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0004] The invention provides a method for manufacturing a defect detection wafer in a polysilicon chemical mechanical polishing process, which can solve the problem of a large number of COP defects caused by damage to the silicon substrate in the process of wafer recycling, thereby solving the problem of testing machine wafers. The defect of itself interferes with the data of the test machine
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[0019] based on the following figure 1 and figure 2 , specifically explain the preferred embodiment of the present invention.
[0020] Such as figure 1 As shown, the present invention provides a method for manufacturing a wafer for defect detection in a polysilicon chemical mechanical polishing process, the method comprising the following steps:
[0021] Step 1, preparing the silicon substrate;
[0022] Step 2, depositing a layer of oxide film on the silicon substrate;
[0023] Step 3, depositing a silicon nitride barrier layer on the oxide layer;
[0024] Step 4, depositing a layer of polysilicon film on the silicon nitride barrier layer;
[0025] Step 5, the prepared control sheet is used for testing polysilicon chemical mechanical polishing process equipment to characterize the defects caused by the polishing process on the wafer surface;
[0026] Step 6, cleaning and removing the residual polysilicon layer through an acid bath process, and retaining the silicon nitr...
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The invention relates to a making method for a defect detection wafer used in a polysilicon chemical mechanical grinding process. A thin silicon oxide film is deposited on a silicon substrate, a silicon nitride barrier layer is deposited on the silicon oxide layer, a polysilicon film is deposited on the silicon nitride barrier layer, and the silicon nitride layer is retained during cycle use. According to the making method, the silicon nitride barrier layer is additionally arranged, so a problem of influence on a machine test result because of COP defects caused by damage to the silicon substrate in a cycle use process of the wafer can be effectively settled, and thereby errors in a detection process are reduced, and the real detection data which represents machine performance can be acquired.
Description
technical field [0001] The invention relates to a wafer manufacturing method in the field of semiconductors, in particular to a wafer manufacturing method for detecting defects in a polycrystalline silicon chemical mechanical polishing process. Background technique [0002] In the polysilicon chemical mechanical polishing process, it is necessary to detect how high the defect rate of the wafer surface caused by the process is, and judge whether the equipment and process need to be improved according to the defect rate. Before testing (testing machine) the equipment of this process, it is necessary to prepare the corresponding testing wafer, that is, the control wafer. For polysilicon chemical mechanical polishing process, because the object of polishing is polysilicon film, its hardness is lower than that of silicon oxide and silicon nitride, so the method of detecting defects with conventional silicon oxide or silicon nitride film is not suitable for polysilicon polishing p...
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IPC IPC(8): H01L21/02
CPCH01L22/12H01L22/30H01L21/7624
Inventor 李儒兴秦海燕张磊李志国
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP