A pss patterned substrate etching method

Abstract

The invention provides a PSS (Patterned Sapphire Substrate) etching method. The method includes: providing the substrate and manufacturing a mask with a needed pattern on the substrate; etching the substrate according to a main etching process; etching the substrate according to an over etching process; and ending the etching. The main etching process includes N etching sub-processes and as for two adjacent etching sub-processes, a lower-electrode radio-frequency power adopted in the latter etching sub-process is higher than a lower-electrode radio-frequency power which is adopted by the former etching sub-process and N is an integer larger than or equal to 3. The PSS etching method provided by the embodiment of the invention inhibits a problem, which exists in the prior art, that a method which reduces the lower-electrode power causes a large increase of the bottom width of the PSS pattern and causes reduction of production efficiency so that the bottom width is effectively inhibited and a selection ratio of the whole main etching process is improved at the same time and the PSS etching process is improved and the growth quality of a GaN epitaxy is improved.

Description

technical field [0001] The invention relates to plasma technology, in particular to a PSS patterned substrate etching method. Background technique [0002] With the continuous progress of GaN-based light-emitting diode (Light Emitting Diode, LED) technology, especially the maturity of blue light-excited phosphor powder to emit yellow light and mix it into white light, daily lighting can be realized in a low-cost and long-life way. Governments of various countries have proposed solid-state lighting revolution plans, which have greatly promoted the rapid development of LED technology. GaN-based LEDs have extremely broad application prospects in image display, signal indication, lighting, and basic research due to their excellent characteristics such as long life, impact resistance, earthquake resistance, and high efficiency and energy saving. [0003] Due to the difficulty in preparing GaN single crystals, GaN-based LED devices are usually prepared on sapphire substrates. Th...

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Problems solved by technology

[0008] The present invention provides a method for etching a PSS patterned substrate to at least solve one of the above technical problems, that is, to solve the problem caused by the method of increasing the etching ratio by reducing the power of the lower electrode in the PSS etching of the prior art. A large increase in the bottom width of PSS graphics and the resulting decrease in production efficiency

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