Heaters for plasma processing plants

Abstract

The invention discloses a heater for a plasma processing device, and a plasma reactor comprises a reaction cavity. The top of the reaction cavity is provided with an insulating window, and the insulating window is sequentially provided with a heater and a coil. The heater comprises a metal shielding protection layer and a heating resistor layer. The metal shielding protection layer completely covers the heating resistor layer. The radio frequency emitted by the coil of the plasma processing device sequentially passes through the metal shielding protection layer and the heating resistor layer to enter the reaction cavity of the plasma processing device. The resistance of the metal shielding protection layer is less that the resistance of the electric heater. The heating resistor layer is covered by the metal shielding protection layer with the resistance being less than the impedance of the heating resistor layer. The metal shielding protection layer is used for replacing the heating resistor layer to achieve the capacitive coupling of radio frequency power of the coil. The low impedance of the metal shielding protection layer enables the radio frequency power to be reduced. Because a coupling current on the metal shielding protection layer is generated through the capacitive coupling, the power loss, caused by capacitive coupling, of the radio frequency power is reduced, and more impact on a magnetic field of a source power is prevented.

Description

technical field [0001] The invention relates to a semiconductor etching technology, in particular to a heater used on an inductively coupled plasma reaction chamber. Background technique [0002] The inductively coupled plasma (ICP) reaction chamber needs to maintain a constant temperature to provide a consistent etching rate and uniformity of wafer surface etching, and the heating of the chamber lid (chamber lid) is also very important link. [0003] At present, in the prior art, the heating method of the reaction chamber cover mainly adopts the resistance heating method, and a heater element (heater element) is arranged on the reaction chamber cover, and the heating element is energized to generate heat energy for heating. This heating method can provide Excellent heating capability, but the disadvantage is that it absorbs part of the source power of the inductively coupled plasma coil (ICPcoil), resulting in a significant reduction in coupling efficiency. [0004] Such ...

AI Technical Summary

Problems solved by technology

Because r1 and r2 are equivalent resistances produced by capacitive coupling, the resistance value is much greater than the resistance R of the heating element 102, so the magnitude of the coupling current I has little to do with the resistance of the heating element 102, and the heat generated by the coupling current I 2 R will cause the ICP source power loss, so if you want to reduce the source power loss, you need to reduce the resistance value of R. However, reducing the resistance value of the heating element 102 will affect the heating effect of the heating element 102, affecting the etching rate and etching uniformity sex

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