Method for cleaning coating film reworked sheet

A technology for the surface of silicon wafers and silicon wafers, which is applied in the field of cleaning of coated reworked wafers, can solve the problems that easily lead to the high proportion of flower wafers and cell wafers, and affect the battery performance, so as to improve production efficiency and quality efficiency, and solve the problem of battery performance. Poor, optimized appearance and performance effects

Inactive Publication Date: 2014-07-02
ZHEJIANG JINKO SOLAR CO LTD +1
View PDF8 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with the cells prepared from the original cells, the cells prepared after cleaning the reworked cells by this method have a high proportion of cell chips and poor performance, which will affect the yield of the production line
[0004] The reason is that a

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for cleaning coating film reworked sheet
  • Method for cleaning coating film reworked sheet
  • Method for cleaning coating film reworked sheet

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiment 1: a kind of cleaning method of coating rework sheet, comprises the following steps:

[0023] (1) Put the coating rework sheet into 15wt% HF solution, soak for 1200s, and remove the silicon nitride film deposited on the surface of the silicon wafer;

[0024] (2) Put the silicon wafer into deionized water at normal temperature, and wash it by bubbling for 200s;

[0025] (3) Put the silicon wafer into the H 2 o 2 and NH 4 OH mixed solution containing 14wt% H 2 o 2 , 14wt%NH 4 OH, 1wt% surfactant and 71wt% deionized water, the temperature is controlled at 75°C, and the reaction time is 100s to remove ions and particles attached to the surface of the silicon wafer and improve the texture of the texture;

[0026] (4) Put the silicon wafer into deionized water at room temperature, and overflow wash it for 200s;

[0027] (5) Put the silicon chip into 5wt% HF solution at normal temperature, react at normal temperature for 210s, remove the oxide layer, and make...

Embodiment 2

[0031] Embodiment 2: the cleaning method of another kind of coating rework sheet, comprises the following steps:

[0032] (1) Put the coating rework sheet into 10wt% HF solution, soak for 900s, and remove the silicon nitride film layer deposited on the surface of the silicon wafer;

[0033] (2) Put the silicon wafer into deionized water at normal temperature, and wash it by bubbling for 250s;

[0034] (3) Put the silicon wafer into the H 2 o 2 and NH 4 OH mixed solution containing 13wt% H 2 o 2 , 7wt%NH 4 OH, 5wt% surfactant and 75wt% deionized water, the temperature is controlled at 85°C, and the reaction time is 50s to remove ions and particles attached to the surface of the silicon wafer and improve the texture of the texture;

[0035] (4) Put the silicon wafer into deionized water at normal temperature, and overflow wash it for 250s;

[0036] (5) Put the silicon chip into 5wt% HF solution at normal temperature, react at normal temperature for 210s, remove the oxide ...

Embodiment 3

[0040] Embodiment 3: another kind of cleaning method of coating rework sheet, comprises the following steps:

[0041] (1) Put the coating rework sheet into 20wt% HF solution, soak for 1800s, and remove the silicon nitride film layer deposited on the surface of the silicon wafer;

[0042] (2) Put the silicon wafer into deionized water at normal temperature, and wash it by bubbling for 300s;

[0043] (3) Put the silicon wafer into the H 2 o 2 and NH 4 OH mixed solution containing 20wt% H 2 o 2 , 12wt%NH 4 OH, 3wt% surfactant and 65wt% deionized water, the temperature is controlled at 65°C, and the reaction time is 200s to remove ions and particles attached to the surface of the silicon wafer and improve the texture of the texture;

[0044] (4) Put the silicon wafer into deionized water at room temperature, and overflow wash it for 200s;

[0045] (5) Put the silicon chip into 5wt% HF solution at normal temperature, react at normal temperature for 210s, remove the oxide lay...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for cleaning a coating film reworked sheet. The method comprises the following steps that (1) the coating film reworked sheet is placed in an HF solution of 10wt% to 20wt% and soaked for 900 s to 1800 s; (2) a silicon wafer is placed in deionized water at the normal temperature and cleaned for 200 s to 300 s in a bubbling mode; (3) the silicon wafer is placed in a mixed solution of H2O2 and NH4OH, the temperature is controlled between 65 DEG C and 85 DEG C, and the reaction time ranges from 15 s to 200 s; (4) the silicon wafer is placed in the deionized water at the normal temperature and cleaned for 200 s to 300 s in an overflowing mode; (5) the silicon wafer is placed in an HF solution of 5wt%, reacts for 210 s at the normal temperature and is cleaned through the deionized water for 200 s to 300 s twice in an overflowing mode, taken out and spin-dried. The production procedure of the method is simple, remaining particles on the surface of a SiNx thin film and the surface of the silicon wafer can be removed, the appearance and the performance of a battery prepared through the reworked sheet are optimized, and the production efficiency and the quality efficiency can be improved.

Description

technical field [0001] The invention relates to a cleaning method of a coated film, in particular to a cleaning method of a coated reworked film. Background technique [0002] At present, solar cells are devices that directly realize photoelectric conversion. In order to effectively utilize light energy, SiNx (silicon nitride) is usually deposited on its surface as an anti-reflection film. In the production process of conventional crystalline silicon solar cells, PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to deposit SiNx anti-reflection coatings. Due to the limitations of coating equipment and process control problems, there are a certain proportion of coating rework pieces (abnormal thickness, refractive index and poor appearance). etc.), the proportion of coating rework is about 1% to 5%. [0003] For the treatment of coated reworked wafers, the general process steps are: (1) soak the reworked wafers in HF solution to remove the SiNx film deposited on the s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B08B3/04B08B3/08B08B3/10
CPCB08B3/048B08B3/08B08B3/10
Inventor 苗丽燕
Owner ZHEJIANG JINKO SOLAR CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap