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Immunological detection device and application of an array fracture electrode

An immunodetection and electrode technology, applied in measurement devices, material electrochemical variables, instruments, etc., can solve the problems of unstable signal, inability to high-throughput, cumbersome operation, etc., to improve comparability and reproducibility, and expand options. range, the effect of improving stability

Inactive Publication Date: 2016-03-30
NANJING UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to disclose an immunological detection device for array fractured electrodes. The device overcomes the problems of unstable signals, cumbersome operation, high throughput and complex system in the prior art and establishes a new type of high-sensitivity detection. Photoelectrochemical immunoassay method, the method has low background signal and high signal-to-noise ratio, which can meet the detection requirements of trace substances

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  • Immunological detection device and application of an array fracture electrode
  • Immunological detection device and application of an array fracture electrode
  • Immunological detection device and application of an array fracture electrode

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Embodiment 1

[0044]The reagents used in the implementation of the immunoassay method using the device of the present invention include the following components: antibodies labeled with nanoparticles of noble metals, antibodies and antigens to be tested, electron donor solutions required for photoelectrochemical reactions, and silver enhanced solution. The devices used include a photoelectrochemical analyzer and a multi-channel electrochemical workstation.

[0045] Taking gold nanoparticles, prostate cancer antigens and antibodies, and CdS quantum dots as examples, the specific implementation process of the device of the present invention in immunoassay is described:

[0046] Chip fabrication:

[0047] A broken electrode is a discontinuous conductor used for detection. At the gap, when the reaction in which the analyte participates produces a certain degree of conduction to the broken electrode, the current passing through the conductor can be measured to measure the amount of the analyte ...

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Abstract

The invention discloses an immunodetection method of an array breakage electrode. The method comprises the following steps: taking a chip as an analytic platform and the array breakage electrode as a detection electrode, forming a binary or ternary immunocomplex at a gap of the detection electrode by a noble metal nanoparticle-marked antibody for an analyte, forming silver deposition under the catalytic action of noble metal nanoparticles by a silver-enhanced solution, forming different light current signals by forming electrodes with different impedance, and quantitatively measuring a material to be detected. According to the method, the signal is stable, the comparability is good, the sensitivity is high, the selectable range of excitation light wavelengths and photoelectric activity materials is wide, and the quantitative analysis can be realized.

Description

technical field [0001] The invention relates to photoelectric immunodetection technology, which is an immunodetection device utilizing photoelectric technology and silver enhancement effect. Background technique [0002] High-throughput, miniaturization, and portability have always been one of the research hotspots in immunoassays. The photoelectrochemical process refers to the transfer of charge by photoactive materials due to the absorption of photons, thereby forming a photocurrent. [0003] So far, the devices used for photoelectrochemical analysis are self-built, which have the disadvantages of bulky and complex structures. It is difficult to achieve high throughput, miniaturization, and portability. [0004] The chip device has the advantages of less reagent consumption, convenience and quickness, etc. In addition, multiple functions can be integrated on one chip. At present, there is no report on the application of chip technology to photoelectrochemical detection....

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N33/574G01N33/531G01N27/26
CPCG01N33/54346G01N33/54393G01N33/588
Inventor 潘建斌徐静娟周明陈洪渊
Owner NANJING UNIV