Semiconductor device manufacturing method and stack type chip manufacturing method

A semiconductor and device technology, applied in the field of semiconductor preparation, can solve the problems of high cost, complex preparation process, low production capacity, etc., and achieve the effect of increasing production capacity, simplifying preparation process and reducing cost

Active Publication Date: 2014-07-09
OMNIVISION TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the prior art, the manufacturing process of stacked sensors is complicated, requiring multiple photomasks to complete the preparation of mask patterns, which is costly and low in productivity.

Method used

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  • Semiconductor device manufacturing method and stack type chip manufacturing method
  • Semiconductor device manufacturing method and stack type chip manufacturing method
  • Semiconductor device manufacturing method and stack type chip manufacturing method

Examples

Experimental program
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preparation example Construction

[0047]The core idea of ​​the present invention is to provide a semiconductor device preparation method, comprising the following steps:

[0048] Step S11: providing a substrate with a device functional layer on one side of the substrate;

[0049] Step S12: Prepare a first opening in the device functional layer, the first opening runs through the device functional layer, and the angle between the side wall of the first opening and the bottom wall of the first opening is less than 90° °;

[0050] Step S13: Using the device functional layer as a mask and the first opening as a mask pattern, etching the substrate to form a second opening on the substrate.

[0051] The included angle between the side wall of the first opening and the bottom wall of the first opening is less than 90°, so that the top dimension of the first opening is smaller than the bottom dimension of the first opening, and the formed on the substrate When the second opening is described, the first opening is us...

no. 1 example

[0058] The following combination Figure 1-Figure 5 The semiconductor manufacturing method in this example will be described. in, figure 1 is a flow chart of the semiconductor manufacturing method according to the first embodiment of the present invention; Figure 2-Figure 5 It is a structural schematic diagram during the preparation process of the semiconductor preparation method according to the first embodiment of the present invention.

[0059] In the semiconductor manufacturing method of this embodiment, first, step S11 is performed to provide a substrate 110, and a device function layer 120 is provided on one side of the substrate 110, such as figure 2 shown. Among them, in figure 2 In the above, the materials of the substrate 110 and the device functional layer 120 are different. In other embodiments of the present invention, the materials of the substrate 110 and the device functional layer 120 may be the same, or may be the same layer.

[0060] Preferably, befo...

no. 2 example

[0065] see Figure 6-Figure 13 A method of manufacturing the stacked chip in this example will be described. in, Figure 6 is a flow chart of the method for preparing stacked chips according to the second embodiment of the present invention; Figure 7-Figure 13 It is a structural schematic diagram during the preparation process of the method for preparing stacked chips according to the second embodiment of the present invention. The method for preparing the stacked chip of the second embodiment uses the method of the first embodiment to prepare the second opening, and the specific steps are as follows:

[0066] First, proceed to step S21, providing a first chip 200 and a second chip 300, such as Figure 7 As shown, the first chip 200 includes a first substrate 210 and a first epitaxial layer 220 located on one side of the first substrate 210 , and the first epitaxial layer 220 includes a first interconnection structure 221 . The second chip 300 includes a second substrate ...

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Abstract

The invention provides a semiconductor device manufacturing method which comprises the steps that a substrate is provided, and a device function layer is arranged on one side of the substrate; a first opening is formed in the device function layer, the first opening penetrates through the device function layer, and the included angle between the side wall of the first opening and the bottom wall of the first opening is smaller than 90 degrees; and the device function layer is used as a mask film, the first opening is used as a mask film pattern, etching is carried out on the substrate, and a second opening is formed in the substrate. The invention further provides a stack type chip manufacturing method. The second opening is formed through the semiconductor device manufacturing method. A semiconductor manufacturing technology can be simplified through the semiconductor device manufacturing method, the productivity of a semiconductor manufacturing plant (FAB) can be improved, and production cost is lowered.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a method for preparing a semiconductor device and a method for preparing a stacked chip. Background technique [0002] With the development of multimedia technology, digital cameras, video cameras, and mobile phones with camera functions are more and more favored by consumers. While people are pursuing miniaturization of digital cameras, video cameras, and mobile phones with camera functions, they can shoot objects The image quality of the camera puts forward higher requirements, that is, it is hoped that the image of the object to be photographed is clear, and the image quality of the object depends to a large extent on the pros and cons of each component in the camera. As the core component of the camera, the quality of the sensor directly affects the quality of the image. [0003] At present, more and more camera sensors use stacked sensors. The English name...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/50
CPCH01L25/0657H01L2225/06565H01L2225/06544H01L2924/0002H01L21/76898H01L23/481H01L25/50H01L2924/00H01L21/76802H01L21/76831H01L2225/06541
Inventor 高喜峰叶菁
Owner OMNIVISION TECH (SHANGHAI) CO LTD
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