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Semiconductor device and fabrication method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve the problems of increasing inter-band leakage and junction leakage, and achieve the effect of reducing inter-band leakage and junction leakage, and reducing leakage current

Active Publication Date: 2014-07-16
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the introduction of this PTS increases the band-to-band leakage and junction leakage

Method used

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  • Semiconductor device and fabrication method thereof
  • Semiconductor device and fabrication method thereof
  • Semiconductor device and fabrication method thereof

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Embodiment Construction

[0010] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0011] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, ...

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PUM

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Abstract

The invention discloses a semiconductor device and a fabrication method thereof. The semiconductor device comprises a fin structure formed on a substrate, an isolation layer formed on the substrate and a gate stack which is formed on the isolation layer and intersects with a fin. The isolation layer exposes a portion of the fin structure, and the exposure portion of the fin structure is used as the fin of the semiconductor device. A penetrating blocking portion is formed only in the area below the intersection portion of the fin and the gate.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a semiconductor device and a manufacturing method thereof. Background technique [0002] As the size of planar semiconductor devices becomes smaller and smaller, the short channel effect becomes more and more obvious. For this reason, three-dimensional semiconductor devices such as FinFETs (Fin Field Effect Transistors) have been proposed. In general, a FinFET includes a fin formed vertically on a substrate and a gate stack intersecting the fin. In addition, an isolation layer is formed on the substrate to isolate the gate stack from the substrate. Therefore, the bottom of the fin is surrounded by the isolation layer, so that it is difficult for the gate to effectively control the bottom of the fin. As a result, leakage current between the source and the drain via the bottom of the fin tends to occur. [0003] Typically, a punch through stopper (PTS) can be emp...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78H01L29/10
CPCH01L29/0684H01L29/66795H01L29/785H01L29/66545H01L29/7851H01L21/31053H01L29/7848H01L29/1083H01L29/165H01L29/0649H01L21/26513H01L21/31055H01L21/3083H01L21/0257
Inventor 朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI