N-type GaN implementation method based on epitaxial layer transfer

Abstract

The invention relates to an N-type GaN implementation method based on epitaxial layer transfer. The method includes the steps that (1) diluted hydrochloric acid is used for cleaning the surface of a Si-based GaN wafer and the surface of a semiconductor wafer, washing is conducted again through deionized water, and then the Si-based GaN wafer and the semiconductor wafer are placed into a spin dryer to be spin-dried; (2) the front face of the Si-based GaN wafer and the front face of the semiconductor wafer are both spin-coated with adhesives which are used as bonding materials, wherein the revolving speed is 1000-5000 rpm, and the time is 30-60 seconds; (3) the Si-based GaN wafer and the semiconductor wafer are put on a hot plate with the front faces facing upwards to be baked, and the temperature of the hot plate is 100-110 DEG C; (4) after the Si-based GaN wafer and the semiconductor wafer are cooled at a room temperature, the front face of the Si-based GaN wafer and the front face of the semiconductor wafer are opposite to each other to be bonded at the temperature of 180-250 DEG C. The N-type GaN implementation method based on epitaxial layer transfer has the advantages that a Si-based GaN epitaxial layer is transferred by a bonding method through the adhesives so as to obtain N-type GaN. The N-type GaN implementation method based on epitaxial layer transfer is simple in technology and breaks the limits that the growing difficulty of an original epitaxial layer is large and the quality is poor.

Description

technical field [0001] The invention relates to a method for realizing N-face GaN based on epitaxial layer transfer, and belongs to the technical field of semiconductor technology. Background technique [0002] Because GaN-based semiconductor materials have the advantages of large forbidden band width, direct band gap, fast electron drift speed and high temperature and high pressure resistance, they have advantages in the production of high-power, high-frequency electronic devices and optoelectronic devices. At present, due to certain difficulties in growth process and polarity control, all devices are grown and fabricated on Ga-face GaN. There are many problems in these devices. For example, the Stark effect caused by the spontaneous polarization of GaN on the Ga surface will reduce the internal quantum efficiency of LED devices; The thickness of the barrier layer will increase the resistance of the channel, which is not conducive to the improvement of device performance. ...

AI Technical Summary

Problems solved by technology

[0004] The present invention proposes a method for realizing N-face GaN based on epitaxial layer transfer, and its purpose is to solve the problems of poor quality and difficult growth of N-face GaN epitaxial growth

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