UWB (Ultra Wide Band) gap tunnel junction

An ultra-wideband, gap-tunneling technology, applied in the field of tunneling junctions, can solve problems such as failure, and achieve the effect of good electrical contact

Inactive Publication Date: 2014-07-23
SHANGHAI INST OF SPACE POWER SOURCES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In more junction cells, such as when AlGaInP sub-cells and GaInP sub-cells are co

Method used

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  • UWB (Ultra Wide Band) gap tunnel junction

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Embodiment 1

[0021] Such as figure 1 As shown, take the AlGaInP / GaInP double-junction wide-bandgap cell as an example. GaInP subcells 2 are grown on n-type GaAs substrate 1 by low-pressure metal-organic chemical vapor deposition (MOCVD) equipment, and then grown by heavily doped n-type Al 0.13 GaInP material3 and p-type Al 0.8 A tunnel junction composed of GaAs material 4 is then regrown AlGaInP top cell 5 .

Embodiment 2

[0023] Take AlGaInP / GaInP double-junction wide-bandgap cells as an example. GaInP subcells 2 are grown on n-type GaAs substrate 1 by low-pressure metal-organic chemical vapor deposition (MOCVD) equipment, and then grown by heavily doped n-type Al 0.09 GaInP material3 and p-type Al 0.5 Tunneling junction composed of GaAs material 4, followed by regrown AlGaInP top cell 5, see figure 1 shown.

[0024] The ultra-wide-bandgap tunneling junction provided by the present invention is composed of ultra-wide-bandgap materials that match the lattice of sub-cells to form a tunneling junction, so that it has good electrical and optical properties in multi-junction cells, and is more efficient for more junctions. The realization of solar cells provides a solid foundation.

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Abstract

The invention discloses a UWB (Ultra Wide Band) gap tunnel junction used for connecting with a broad-band gap sub-battery in a multijunction solar battery. The UWB gap tunnel junction comprises an n-type Alx-Ga-InP layer and a p-type Aly-Ga-As layer which are sequentially arranged in parallel, wherein x is not less than 0.01 and is not more than 0.5, and y is not less than 0.1 and is not more than 0.9; an n-type dopant is Te of which the doping concentration is 5*10<18>-5*10<19>cm<-3>; the P-type dopant is C of which the doping concentration is 5*10<18>-5*10<20>cm<-3>; and the thickness ranges of the n-type Alx-Ga-InP layer and the p-type Aly-Ga-As layer are 10-100nm. The UWB gap tunnel junction provided by the invention is combined by a UWB gap material, so that good electrical contact between a top battery in a UWB solar battery and a sub-battery below the UWB solar battery can be formed, and the difficult problem that a current density tunnel junction with high peak is difficultly prepared can be solved.

Description

technical field [0001] The present invention relates to a tunneling junction, in particular to an ultra-wide bandgap tunneling junction. Background technique [0002] The current solar cell with the highest conversion efficiency comes from the III-V multi-junction solar cell composed of III-group elements and V-group elements. The efficiency has reached 35.1% under AM0 test conditions. III-V solar cells are commonly used in space vehicles. And ground concentrating solar battery system. Multi-junction solar cells connect sub-cells with different band gaps in series, and each cell has a p-n structure. Simply connecting the sub-cells in series will form a reverse-biased p-n junction at the contact interface, so that the voltages cancel each other out. Not conductive. Tunneling junction is to connect sub-cells in series in multi-junction solar cells to facilitate the loss of carriers in the device as little as possible and form good electrical contact. The epitaxial layer mak...

Claims

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Application Information

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IPC IPC(8): H01L31/0735
CPCY02E10/544H01L31/0725H01L31/03042H01L31/03046H01L31/0735
Inventor 李欣益陆宏波张玮周大勇孙利杰陈开建沈静曼石梦奇
Owner SHANGHAI INST OF SPACE POWER SOURCES
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