Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor light emitting device preparation method based on laser stripping

A light-emitting device, laser lift-off technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as GaN film cracking, and achieve the effect of improving yield and ensuring integrity

Inactive Publication Date: 2014-07-23
SHINEON BEIJING TECH
View PDF2 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, the stress between the peeled part and the unstripped GaN film will also cause the GaN film to crack

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor light emitting device preparation method based on laser stripping
  • Semiconductor light emitting device preparation method based on laser stripping
  • Semiconductor light emitting device preparation method based on laser stripping

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0022] The present invention provides a method for preparing a semiconductor light emitting device, including the following steps: sequentially growing a buffer layer, an N-type GaN layer, an active layer, and a P-type GaN layer on a sapphire substrate 100 to form an epitaxial layer 110; and etching the epitaxial layer From layer 110 to the exposed sapphire substrate 100 to produce a plurality of discrete dies 1, a part of the epitaxial layer 110 is reserved between every two adjacent dies 1 as isolation tape 2, and the gap between different dies 1 The isolation tape 2 is discrete; the sapphire substrate 100 is removed by a laser lift-off method.

[0023] The structure of the etched epitaxial layer 110 is as figure 1 As shown, a part of the epitaxial layer is reserved as an isolation band 2 between every two adjacent dies 1, and the isolation band 2 is discontinuous, and the width of the isolation band 2 is 5-100 microns. A groove 3 is formed between the isolation band 2 and the ...

Embodiment 1

[0025] Such as Figure 2a As shown, a buffer layer, an N-type GaN layer, an active layer, and a P-type GaN layer are sequentially grown on the sapphire substrate 100 to form an epitaxial layer 110. The sapphire substrate 100 is mechanically ground, thinned, and polished. Such as Figure 2b As shown, the epitaxial layer 110 is dry-etched by ICP or RIE, and the epitaxial layer 110 is etched through to expose the sapphire substrate 100 to form a plurality of discrete dies 1, and at the same time every two adjacent dies 1 Part of the epitaxial layer 110 is reserved as the isolation band 2 in between, and the isolation band 2 between different dies 1 is discontinuous. The width of the isolation band 2 is 20 microns, and the width of the groove 3 between the edge of the adjacent die 1 is 10 microns. Such as Figure 2c As shown, the etched epitaxial layer 110 is combined with the supporting substrate 120 by a eutectic bonding method, or the etched epitaxial layer 110 can be glued and...

Embodiment 2

[0027] Such as Figure 3a As shown, a buffer layer, an N-type GaN layer, an active layer, and a P-type GaN layer are sequentially grown on the sapphire substrate 100 to form an epitaxial layer 110. The sapphire substrate 100 is mechanically ground, thinned, and polished. Such as Figure 3b As shown, the epitaxial layer 110 is dry-etched by ICP or RIE, and the epitaxial layer 110 is etched through to expose the sapphire substrate 100 to form a plurality of discrete dies 1, and at the same time every two adjacent dies 1 Part of the epitaxial layer 110 is reserved as the isolation band 2 in between, and the isolation band 2 between different dies 1 is discontinuous. The width of the isolation band 2 is 40 microns, and the width of the groove 3 between the edge of the adjacent die 1 is 10 microns. Such as Figure 3c As shown, a high-temperature epoxy resin modified glue is coated on the etched epitaxial layer 110, bonded with the silicon substrate of the first temporary substrate ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method which protects LED tube cores in a sapphire substrate laser stripping process. According to the invention, when discrete tube cores are formed on an etching epitaxial layer, partial epitaxial layer is retained between tube cores as an isolation belt; the problem that the edge of a tube core cracks in the laser stripping process is solved; and the yield is improved. The method provided by the invention is applied to the preparation of a GaN based semiconductor light emitting device.

Description

Technical field [0001] The invention relates to a preparation process of a semiconductor light emitting device. More specifically, the present invention relates to a method for protecting a GaN-based epitaxial layer during a laser lift-off process. Background technique [0002] As the main substrate for epitaxial growth of GaN-based LEDs, the sapphire substrate has relatively poor conductivity and heat dissipation. Due to the poor conductivity of the sapphire substrate, traditional GaN-based LEDs have to adopt a lateral structure, which leads to current blockage and heat generation. The poor thermal conductivity limits the power of the light-emitting device. After the sapphire substrate is removed by laser lift-off technology, the light-emitting diode is made into a vertical structure, which can effectively solve the problem of heat dissipation and light emission. In order to improve the light efficiency and power of GaN-based LEDs, a laser lift-off sapphire substrate technolo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L21/683
CPCH01L33/0093
Inventor 朱浩范振灿
Owner SHINEON BEIJING TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com