A kind of preparation method of double perovskite magnetoresistance film

A double perovskite and magnetoresistance technology, which is applied in the fields of magnetic field controlled resistors, electromagnetic device manufacturing/processing, electrolytic coating, etc., can solve the difficulty of preparing high-quality thin films that are not suitable for large-scale industrial production, pulsed laser Expensive equipment and other issues, to achieve the effect of easy control of growth conditions, simple method, and high Curie temperature

Inactive Publication Date: 2016-07-13
SHANDONG JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This shows that even though the pulsed laser deposition technique has been widely used to prepare Sr 2 FeMoO 6 film, it is also very difficult to prepare high-quality films
At the same time, pulsed laser equipment is expensive, and the size of the prepared film is small, which is not suitable for large-scale industrial production

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  • A kind of preparation method of double perovskite magnetoresistance film
  • A kind of preparation method of double perovskite magnetoresistance film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Sr described in this example 2 FeMoO 6 The parent material was prepared as follows:

[0042] a. SrCO 3 , Fe 2 o 3 、MoO 3 The powder is pretreated in a muffle furnace at 300°C for 3 hours;

[0043] b. The pretreated SrCO 3 , Fe 2 o 3 and MoO 3 Mix evenly according to the mass ratio of 0.3413:0.0923:0.1664 and grind to a particle size of ≤70 μm, and place it in a muffle furnace for calcination at 900°C for 10 hours;

[0044] c. Grind the material obtained in step b to a particle size ≤ 40 μm, press into tablets, and use 5% volume fraction of H at 1280° C. 2 Sintering in a mixed flow atmosphere with 95% Ar by volume for 3 hours, and detecting the quality of the sample with a polycrystalline X-ray powder diffractometer;

[0045] When the sample is a single phase, the Sr 2 FeMoO 6 ;

[0046] When the sample contains an impurity phase, repeat the grinding, pressing, sintering, and detection steps in step c until the sample is a single phase, that is, Sr 2 FeMoO...

Embodiment 2

[0066] The Ba described in this example 2 FeMoO 6 The parent material was prepared as follows:

[0067] a. BaCO 3 , Fe 2 o 3 、MoO 3 The powder was pretreated in a muffle furnace at 250°C for 4 hours;

[0068] b. The pretreated BaCO 3 , Fe 2 o 3 and MoO 3 Mix evenly according to the mass ratio of 1.5954:0.3227:0.5819 and grind to a particle size of ≤60 μm, and place it in a muffle furnace for calcination at 900°C for 12 hours;

[0069] c. Grind the material obtained in step b to a particle size ≤ 40 μm, press into tablets, and use 5% volume fraction of H at 1230° C. 2 Sintering in a mixed flow atmosphere with 95% Ar by volume for 3 hours, and detecting the quality of the sample with a polycrystalline X-ray powder diffractometer;

[0070] When the sample is a single phase, Ba 2 FeMoO 6 ;

[0071] When the sample contains an impurity, repeat the steps of grinding, pressing, sintering, and detection in step c until the sample is a single phase, that is, Ba 2 FeMoO ...

Embodiment 3

[0075] Ca described in this example 2 FeMoO 6 The parent material was prepared as follows:

[0076] a. CaCO 3 , Fe 2 o 3 、MoO 3 The powder is pretreated in a muffle furnace at 350°C for 2 hours;

[0077] b. The pretreated CaCO 3 , Fe 2 o 3 and MoO 3 According to the mass ratio of 1.1803:0.4708:0.8489, mix evenly and grind to a particle size of ≤60 μm, and place it in a muffle furnace for calcination at 1000°C for 8 hours;

[0078] c. Grind the material obtained in step b to a particle size ≤ 40 μm, press into tablets, and use 5% volume fraction of H at 1250° C. 2 Sintering in a mixed flow atmosphere with 95% Ar by volume for 3 hours, and detecting the quality of the sample with a polycrystalline X-ray powder diffractometer;

[0079] When the sample is a single phase, the Ca 2 FeMoO 6 ;

[0080] When the sample contains an impurity phase, repeat the grinding, pressing, sintering, and detection steps in step c until the sample detection result is a single phase, th...

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Abstract

The invention relates to a method for preparing a double perovskite magnetoresistive thin film. The preparation method comprises the steps of firstly grinding a double perovskite parent material to particles of which the sizes are less than or equal to 0.2mu m, mixing with acetone and iodine, and dispersing uniformly to obtain a suspension; then respectively connecting a monocrystalline silicon substrate and copper plates to a positive electrode and a negative electrode, carrying out electrophoresis on the suspension under the action of direct current voltage, and depositing a layer of uniform black thin film on the surface of the monocrystalline silicon; finally annealing the black thin film at 1030-1160 DEG C for 3-6 hours to obtain the double perovskite magnetoresistive thin film. According to the invention, the double perovskite magnetoresistive thin film is prepared on the substrate of the monocrystalline silicon by electrophoresis, the growth process of the thin film does not require a vacuum environment, and growth conditions are easy to control. The preparation method has the advantages of simplicity, no need of complex and expensive equipment and low cost. The prepared double perovskite magnetoresistive thin film has high Curie temperature and wide range of applications.

Description

technical field [0001] The invention relates to a preparation method of a double perovskite magnetoresistance film, belonging to the technical field of magnetoresistance materials. Background technique [0002] In recent years, the giant magnetoresistance effect (GMR) has shown great application prospects in spintronic devices such as magnetic read-write and magnetic storage. In 1998, Japanese scientists Kobayashi and others discovered a double perovskite magnetoresistance material Sr 2 FeMoO 6 . Compared with previous magnetoresistive materials, the advantage of this material is that its Curie temperature is above room temperature (T C >420K), the magnetoresistance effect at room temperature is as high as 10%, and it is an excellent material for preparing high-performance spintronic devices such as high-density magnetic heads and large-capacity hard disks. However, Sr 2 FeMoO 6 The thin film is an essential link. [0003] Currently preparing Sr 2 FeMoO 6 The mai...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D13/02H01L43/12H01L43/08
Inventor 张芹
Owner SHANDONG JIAOTONG UNIV
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