Zn1-xMgxO group heterojunction and preparation method thereof

A technology of zn1-xmgxo and 01-xmgxo, which is applied in the field of wide bandgap semiconductor optoelectronic devices, can solve the problems that the bandgap width of the thin film layer cannot be adjusted, and the thin film material is difficult to prepare.

Inactive Publication Date: 2015-04-22
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the invention is to overcome existing p-type Zn 1-x Mg x O thin film materials are difficult to prepare, and the band gap of the n-type and p-type thin film layers of the heterojunction cannot be adjusted, and provide a Zn with continuously adjustable band gap. 1-x Mg x O-based heterojunction and its preparation method

Method used

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  • Zn1-xMgxO group heterojunction and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0022] 1) Weigh ZnO, MgO and Al with purity ≥99.99% 2 o 3 Powder, wherein the molar percentage x of Mg is 10%, and the molar percentage a of Al is 2%. The above-mentioned powder and an appropriate amount of ethanol are poured into a ball mill jar equipped with agate balls successively, and placed on a ball mill for ball milling for 24 Hours. There are two purposes of ball milling: on the one hand, it is to combine ZnO, MgO and Al 2 o 3 The powder is mixed evenly to ensure the uniformity of the target material composition; on the other hand, it is to mix ZnO, MgO and Al 2 o 3 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder. After ball milling, the raw materials are separated and dried, and the resulting powder is ground and pressed into shape. Put the shaped green body into a sintering furnace, pre-sinter at 800°C for 1 hour, and then sinter at 1100-1200°C for more than 8 hours to obtain an Al-doped Zn alloy with a thickness of...

Embodiment 2

[0027] 1) Weigh ZnO, MgO and Ga with purity ≥99.99% 2 o 3 Powder, wherein the molar percentage x of Mg is 20%, and the molar percentage a of Al is 3%. The above-mentioned powder and an appropriate amount of ethanol are poured into a ball mill jar equipped with agate balls successively, and placed on a ball mill for ball milling for 24 Hours. There are two purposes of ball milling: on the one hand, it is to combine ZnO, MgO and Al 2 o 3 The powder is mixed evenly to ensure the uniformity of the target material composition; on the other hand, it is to mix ZnO, MgO and Al 2 o 3 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder. After ball milling, the raw materials are separated and dried, and the resulting powder is ground and pressed into shape. Put the formed green body into a sintering furnace, pre-sinter at 800°C for 1 hour, and then sinter at 1100-1200°C for more than 8 hours to obtain an Al-doped Zn alloy with a thickness of...

Embodiment 3

[0032] 1) Weigh ZnO, MgO and Al with purity ≥99.99% 2 o 3 Powder, wherein the molar percentage x of Mg is 30%, and the molar percentage a of Al is 4%. The above-mentioned powder and an appropriate amount of ethanol are poured into a ball mill jar equipped with agate balls successively, and placed on a ball mill for ball milling for 24 Hours. There are two purposes of ball milling: on the one hand, it is to combine ZnO, MgO and Al 2 o 3 The powder is mixed evenly to ensure the uniformity of the target material composition; on the other hand, it is to mix ZnO, MgO and Al 2 o 3 The powder is refined to facilitate the subsequent molding and sintering of the mixed powder. After ball milling, the raw materials are separated and dried, and the resulting powder is ground and pressed into shape. Put the formed green body into the sintering furnace, pre-sinter at 800°C for 1 hour, and then sinter at 1100-1200°C for more than 8 hours to obtain Al-doped Zn with a thickness of about ...

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Abstract

The invention relates to a Zn1-xMgxO group heterojunction and a preparation method of the Zn1-xMgxO group heterojunction. The heterojunction is composed of an n-Zn1-xMgxO thin layer and a p-Ni1-yMgyO thin layer which are positioned on a substrate. The preparation method includes the following steps: (1) mixing ZnO and MgO with Al2O3 powder or Ga2Ob powder, compression molding and sintering the mixture, and obtaining Zn1-xMgxO ceramic target material mixed with Al or Ga, (2) mixing NiO, MgO and Li2CO3 powder, compression molding and sintering the mixture, and obtaining Li1-xMgxO ceramic target material mixed with Li, (3) putting the substrate in a pulsed laser deposition device, adjusting the distance between the target materials and the substrate, depositing the n-Zn1-xMgxO thin layer on the substrate using the Ni1-xMgxO ceramic target as sputtering target material under proper substrate temperature, oxygen pressure and laser frequency, (4) depositing the p-Ni1-yMgyO thin layer on the n-Zn1-xMgxO thin layer using the Ni1-xMgxO ceramic target mixed with Li as sputtering target material, and obtaining the Zn1-xMgxO group heterojunction. The Zn1-xMgxO group heterojunction preparation method has the advantages that preparation method is simple, cost is low, producing conditions are easy to control, compatibility of interface lattices is good, and performance of components is improved. Further, the Zn1-xMgxO group heterojunction has a wide application prospect in short wave optoelectronic devices and transparent electronics field.

Description

technical field [0001] The present invention relates to a kind of Zn 1-x Mg x O-based heterojunction and preparation method thereof, especially by n-Zn 1-x Mg x O thin film layer and p-Ni 1-y Mg y A kind of Zn composed of O thin film layer 1-x Mg x The invention relates to an O-based heterojunction and a preparation method thereof, belonging to the technical field of wide-bandgap semiconductor optoelectronic devices. Background technique [0002] Zn 1-x Mg x O alloy is a wide bandgap II-VI oxide semiconductor, which has the characteristics of abundant raw materials, environmental friendliness, and relatively low deposition temperature. It is a hot material for the preparation of optoelectronic devices such as ultraviolet light-emitting diodes and lasers. However, Zn 1-x Mg x The key to the application of O towards optoelectronic devices is to realize stable, low resistance and high quality n-type and p-type Zn 1-x Mg x O film. Currently, n-type Zn 1-x Mg x Th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/26C23C14/28C23C14/08
Inventor 曹铃王金平崔艳霞陈彬刘瑞萍
Owner TAIYUAN UNIV OF TECH
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