Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of preparation method of ultraviolet light-emitting diode device

A technology of light-emitting diodes and devices, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reduced luminous efficiency of ultraviolet light-emitting diodes, and achieve the effect of improving luminous efficiency

Active Publication Date: 2017-03-08
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in figure 1 In the shown UV LED device, since the forbidden band width of p-type GaN (107) is smaller than that of the active area in the AlGaN active area (104), the p-type GaN (107) will strongly absorb the AlGaN active area (104) The ultraviolet light emitted to the p-type GaN (107) side makes the intensity of ultraviolet light emitted from the top of the pn junction table almost zero, which directly leads to a 50% reduction in the luminous efficiency of the ultraviolet light-emitting diode

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of ultraviolet light-emitting diode device
  • A kind of preparation method of ultraviolet light-emitting diode device
  • A kind of preparation method of ultraviolet light-emitting diode device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings. It should be noted that in the drawings or description of the specification, similar or identical parts use the same drawing numbers. The implementations not shown or described in the drawings are those known to those of ordinary skill in the art. In addition, although this article may provide an example of a parameter containing a specific value, it should be understood that the parameter does not need to be exactly equal to the corresponding value, but can be approximated to the corresponding value within acceptable error tolerances or design constraints. The directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only directions with reference to the draw...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for manufacturing an ultraviolet light-emitting diode device. According to the method, a pn junction table facet is completely made of AlxGal-xN materials, wherein x is larger than or equal to 0 and smaller than or equal to 1, the content of the Al constituent in an active area is the lowest, and namely the whole pn junction table facet structure of the light-emitting diode is permeable to light emitted by the active area. Thus, the ultraviolet light-emitting diode structure solves the problem that a p-type GaN layer absorbs ultraviolet light, and the light emitting efficiency of the ultraviolet light-emitting diode can be effectively improved.

Description

Technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a method for preparing an ultraviolet light emitting diode device. Background technique [0002] Ultraviolet light-emitting diodes have attracted much attention because of their huge potential application value in many fields such as white light excitation, biochemical detection, sterilization and disinfection, environmental purification, polymer curing, and short-distance secure communication. Compared with traditional ultraviolet light source mercury lamps, AlGaN-based ultraviolet light-emitting diodes have the advantages of long life, low working voltage, adjustable wavelength, environmental protection, good directionality, rapid switching, shock resistance and moisture resistance, lightness and flexibility. With the deepening of research work, Will become the mainstream light source for new UV applications in the future. [0003] Reference 1 (Applied Physics Express3...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/007H01L33/20H01L33/32
Inventor 张韵孙莉莉闫建昌王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI