Growth method for controlling diameter of rod-like sapphire crystal based on protective atmosphere

A sapphire crystal, protective atmosphere technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., to achieve the effect of ensuring compactness, high cost performance, and reducing manufacturing costs

Inactive Publication Date: 2014-08-06
JIANGSU CEC ZHENHUA CRYSTAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In special industrial applications, special forms of sapphire crystals are required, such as sapphire crystals used for decorations. Therefore, it has become a demand to be able to change the crystal size in real time during the crystal growth process. After searching the relevant literature, there is no Find the same technical scheme as the present invention

Method used

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  • Growth method for controlling diameter of rod-like sapphire crystal based on protective atmosphere
  • Growth method for controlling diameter of rod-like sapphire crystal based on protective atmosphere
  • Growth method for controlling diameter of rod-like sapphire crystal based on protective atmosphere

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Embodiment 1: When the diameter of the sapphire crystal is 47MM, it is necessary to increase the gas flow rate to increase its diameter to 50MM, the data are shown in the table below:

[0058] Current crystal diameter (MM) Gas flow rateL / S Ventilation time (S) Gas diameter after ventilation (MM) 47 1 30 50 47 5 10 50 47 10 - The height of the liquid film decreases, h≤0, at this time the liquid film freezes

[0059] The above data show that when it is necessary to increase the diameter of the sapphire crystal, it is better to control the gas flow rate between 5-8S.

Embodiment 2

[0060] Embodiment 2: When the diameter of the sapphire crystal is 54MM, it is necessary to reduce the gas flow rate to reduce its diameter to 50MM, the data are shown in the table below

[0061] Current crystal diameter (MM) Raw gas flow rate L / S Existing gas flow rate L / S Ventilation time (MIN) Gas diameter after ventilation (MM) 54 5 2 120 50 54 5 1 60 50 54 5 0 37 50

[0062] The above data show that when the sapphire crystal diameter needs to be reduced, its aeration time is longer.

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Abstract

The invention relates to a growth method for controlling the diameter of a rod-like sapphire crystal based on a protective atmosphere. An airflow introduction passage is distributed around the upper end of a mold within a thermal field when a crystal is grown, gas flowing in from the airflow introduction passage performs convection heat dissipation on the upper end of the mold, and the heat dissipation strength of the mold is controlled by adjusting the flow rate of the gas so as to adjust the thickness of a liquid film at the solid-liquid interface of the crystal and change the size and shape of a sapphire product; the purpose of changing the diameter of the crystal is fulfilled by controlling the flow rate of the gas scouring the surface of the mold based on the size and shape of the sapphire; when the diameter of the grown crystal needs to be increased, the velocity of the gas flowing into the airflow passage can be increased; when the diameter of the grown crystal needs to be reduced, the velocity of the gas flowing into the airflow passage can be reduced. The growth method disclosed by the invention has the advantages that the shape of the grown crystal is controlled by adopting the method of cooling the mold with gas flow, so that the influence of external disturbance on the shape of the crystal can be overcome in the growth process; in addition, the growth method can also be used for growing a crystal in a specific shape.

Description

technical field [0001] The invention relates to a growth method for controlling the diameter of a rod-shaped sapphire crystal based on a protective atmosphere, belonging to the technical field of crystal growth, and in particular to a growth method for controlling the diameter of a rod-shaped sapphire crystal based on a protective atmosphere. Background technique [0002] The guided mode method, also known as the EFG method, is a crystal growth method in which the melt is solidified into crystals by means of a mold. When the raw material is heated by the heater, the raw material melts into a melt in the crucible, and the melt is introduced from the lower end of the mold placed in the melt to the upper end of the mold through capillary action, and forms a liquid film (also known as melt) on the upper surface of the mold. membrane). Under the control of an appropriate temperature gradient, seeding is completed after the seed crystal is in contact with the liquid film on the u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/20C30B15/24
Inventor 薛卫明马远邱一豇牛沈军吴勇周健杰
Owner JIANGSU CEC ZHENHUA CRYSTAL TECH
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