Diode reverse recovery characteristic tester

A reverse recovery and diode technology, applied in the direction of single semiconductor device testing, etc., can solve the problems of low test accuracy, limited test voltage, limited test voltage, etc., and achieve the effect of wide test voltage range, wide test range and high precision

Inactive Publication Date: 2014-08-06
ZHANGJIAGANG EVER POWER SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The usual instruments for testing the reverse recovery characteristics of diodes can only test the reverse recovery time of diodes, and the range of te

Method used

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  • Diode reverse recovery characteristic tester

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Embodiment Construction

[0011] see figure 1 , The present invention has a power supply 1, an inductor 2, a drive device 4; the power supply 1, an inductor 2, an inductive load 3, and a drive device 4 are connected in series, and the component under test 5 and the current transformer 6 are connected in series and then connected to the inductive load 3. Parallel; the driving device 4 has a first terminal, a second terminal and a third terminal; the first terminal is connected to the inductive load 3, the second terminal is connected to the power supply 1, and the third terminal is connected to the A gate resistor 7 and a multivibrator 8 are connected in series between the two terminals; the driving device 4 is an IGBT field effect tube with a damping diode; the component under test 5 is a diode that is a fast (super) recovery diode or a field effect Built-in diode or insulated gate bipolar transistor built-in diode.

[0012] The device adjusts the forward current I of the diode by the value of the test pu...

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Abstract

The invention relates to a diode reverse recovery characteristic tester. The diode reverse recovery characteristic tester is provided with a power source, an inductor and a driving device. The power source, the inductor, an inductive load and the driving device are connected together in series, and after an element to be tested is connected with a current transformer in series, the element to be tested is connected with the inductive load in parallel. The driving device is provided with a first wiring terminal, a second wiring terminal and a third wiring terminal. The first wiring terminal is connected with the inductive load, the second wiring terminal is connected with the power source, and a gate resistor and a multivibrator are connected between the third wiring terminal and the second wiring terminal in series. The diode reverse recovery characteristic tester can be freely adjusted according to specific test requirements, the reverse recovery time and other reverse recovery characteristics of a diode can be tested, and both an ordinary diode and any device comprising a diode can be tested; the diode reverse recovery characteristic tester is wide in test range, high in precision and wide in test voltage range, and the actual characteristics of various reverse recovery characteristics of a diode can be analyzed clearly and accurately by an external oscilloscope.

Description

Technical field [0001] The invention relates to a diode characteristic tester, in particular to a diode reverse recovery characteristic tester. Background technique [0002] Power electronic devices are developing with each passing day. In recent years, after power devices such as thyristors, bidirectional thyristors, turn-off thyristors (GTO), and integrated gate-commutated thyristors (IGCT), insulated gate bipolar transistors (IGBT) have appeared. In the future, the development of power electronic device technology will develop in the direction of high power, high current, high frequency and integration. Among them, the recovery characteristics of the built-in diodes of these devices is an important aspect to be considered when designing. The acquisition, statistics and analysis of these recovery characteristics depend on the performance of the matching test equipment, and it must be constantly updated. Only matching test equipment can be competent for its test work. [0003] ...

Claims

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Application Information

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IPC IPC(8): G01R31/26
Inventor 高万喜周炳刘晓萌
Owner ZHANGJIAGANG EVER POWER SEMICON
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