Highly uniform gan film grown on sapphire substrate and its preparation method and application

Abstract

The invention relates to a high-uniformity GaN film growing on a sapphire substrate. The high-uniformity GaN film growing on the sapphire substrate comprises an Al2O3 substrate, an AlN nucleation layer and a GaN film body, wherein the AlN nucleation layer and the GaN film body sequentially grow in an epitaxial mode from the face (0001) of the Al2O3 substrate to the direction deviating from the face (10-10) by 0.2 degree. The invention further relates to a preparing method of the GaN film. The method includes the following steps that a, the Al2O3 substrate is cleaned and annealed; b, the AlN nucleation layer grows on the Al2O3 substrate treated through the step a in an epitaxial mode; c, the GaN film body grows on the AlN nucleation layer growing through the step b in an epitaxial mode. The high-uniformity GaN film growing on the sapphire substrate is used for preparing an LED, a photoelectric detector and a solar cell. The GaN film is low in cost, high in quality, high in uniformity and wide in application range.

Description

technical field [0001] The invention relates to a GaN film and its preparation method and application, in particular to a high-uniformity GaN film grown on a sapphire substrate and its preparation method and application. Background technique [0002] Compared with traditional light sources, light-emitting diodes (LEDs) have outstanding features such as low power consumption, long life, high brightness, small size, strong adaptability and controllability, etc. It is a new type of solid-state lighting source and green light source. It has a wide range of applications in the fields of exterior lighting and decoration engineering. In the context of increasingly depleted petrochemical energy and increasingly severe global warming, energy conservation and emission reduction has become an important issue for the world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of ...

AI Technical Summary

Problems solved by technology

The 21st century will be an era of new lighting sources represented by LEDs, but at this stage, LEDs have low luminous efficiency and high cost, which greatly restricts the development of LEDs in the direction of high efficiency, energy saving and environmental protection.

However, due to the small area of ​​the plasma plume generated by the laser, it is difficult to prepare GaN films with high uniformity, which has become one of the limiting conditions for pulsed laser deposition.

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