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Insulated gate bipolar transistor and manufacturing method

A technology of bipolar transistors and insulated gates, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems that cannot meet the requirements of IGBT reverse withstand voltage capability

Inactive Publication Date: 2014-08-27
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The ability of an IGBT to withstand reverse withstand voltage is an important parameter to measure its performance. However, the reverse withstand voltage of a conventional IGBT is only a dozen volts or tens of volts, which is far from satisfying the requirements for IGBTs in actual work. Requirements for reverse withstand voltage capability

Method used

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  • Insulated gate bipolar transistor and manufacturing method
  • Insulated gate bipolar transistor and manufacturing method
  • Insulated gate bipolar transistor and manufacturing method

Examples

Experimental program
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Effect test

Embodiment 1

[0078] This embodiment provides an IGBT, the IGBT is provided with a second terminal structure, and the second terminal structure serves as a reverse withstand voltage terminal structure of the IGBT, which can effectively improve the ability of the IGBT to withstand reverse withstand voltage.

[0079] refer to figure 2 , figure 2 A schematic structural diagram of an IGBT provided in this embodiment, including:

[0080] P-type collector area 1;

[0081] A super-junction drift region disposed on the surface of the P-type collector region 1, the super-junction drift region includes a plurality of P-type regions 3 and N-type regions 4 arranged at intervals in the lateral direction;

[0082] An active region located on the surface of the super junction drift region and a first terminal structure, the first terminal structure surrounds the active region; wherein the active region includes: a plurality of IGBT cells, figure 2 Only one IGBT cell is shown in the figure, including...

Embodiment 2

[0090] In the above embodiments, the second terminal structure of the IGBT is integrally formed, and the second terminal structure is formed at one time by using an ion implantation process. However, the second terminal structure of the integrally formed structure has higher requirements on the manufacturing process and requires greater injection energy.

[0091]The inventors found that the non-integrated second terminal structure can be formed through multiple epitaxy and implantation processes, so as to reduce the manufacturing cost of the IGBT. The second terminal structure of the non-integrated structure means that the second terminal structure is formed in a multi-layer silicon layer after multiple epitaxy, and is not formed on a whole silicon substrate.

[0092] refer to image 3 , on the basis of the above embodiments, this embodiment provides another IGBT, which has a P-type second terminal structure 91 that is not integrally formed.

[0093] In the longitudinal sect...

Embodiment 3

[0113] Based on the above embodiments, this embodiment provides another IGBT, refer to Figure 9 , in the longitudinal section, the IGBT has a P-type second terminal structure 92 that is not integrally formed. The P-type second terminal structure 92 includes: a plurality of rectangular regions stacked in the first direction, and the widths of the plurality of rectangular regions increase in the first direction, so that the width of the P-type second terminal structure 92 L2 is incremented in the first direction.

[0114] The super junction drift region of the IGBT includes: a plurality of P-type regions 32 and N-type regions 42 , and the P-type regions 32 and N-type regions 42 are distributed at intervals. In the above longitudinal section, the P-type region 32 is rectangular, so that its width in the first direction does not change.

[0115] The second terminal structure 92 of the IGBT in this embodiment can be formed at the same time as its superjunction drift region, and ...

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Abstract

The invention discloses an insulated gate bipolar transistor and its manufacturing method. The insulated gate bipolar transistor comprises a collector region, a super-junction drift region positioned on the surface of the collector region, an active region positioned on the surface of the super-junction drift region, a first terminal structure which encircles the active region and a second terminal structure which encircles the super-junction drift region and the first terminal structure. Width of the second terminal structure increases progressively in a first direction. The first direction is from the collector region to the active region. The bottom of the second terminal structure is contacted with the collector region, and the top of the second terminal structure is flush with the top of the active region. As the insulated gate bipolar transistor provided by the application is equipped with the second terminal structure which is used as a reverse pressure terminal structure of the insulated gate bipolar transistor, reverse pressure resistance of the insulated gate bipolar transistor can be raised effectively.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an insulated gate bipolar transistor and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), and has a MOSFET Due to the high input impedance of the device and the high-speed switching characteristics of the power transistor (Giant Transistor, GTR for short), IGBT is widely used in AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. [0003] The ability of an IGBT to withstand reverse withstand voltage is an important parameter to measure its performance. However, the reverse withstand voltage of a conventional IGBT is only a dozen volts or tens of volts, which is far from satisfyi...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L21/331
CPCH01L29/7393H01L29/0638H01L29/66325
Inventor 褚为利朱阳军田晓丽卢烁今胡爱斌
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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