Forming method of mask plate pattern and photolithography and etching method

Abstract

The invention provides a method for forming patterns of a mask. The method is characterized by comprising the steps of forming a filling part between lines on the mask, covering a gap between every two adjacent lines by utilizing the filling part, and extending the filling part to the arrangement direction of the adjacent lines. The filling part is combined with the lines to form a first pattern which is used for primary exposure in a double-exposure technology, and the filling part is used as a second pattern which is used for the other exposure in the double-exposure technology. According to the method, the gap and the area surround the gap are filled, so that the area of the formed second pattern is large, and the influence of the optical proximity effect can be greatly alleviated to a great extent. The invention also provides a photoetching and etching method. The separated first pattern and second pattern are respectively used for exposure, so that a good image can be formed on a substrate.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for forming a mask pattern and a photolithography and etching method. Background technique [0002] In recent years, with the continuous advancement of semiconductor technology, the functions of devices have become increasingly powerful. However, along with it, the feature size of the device is getting smaller and smaller, and the manufacturing difficulty is also increasing day by day. For complex circuit layouts, the size of devices and wires on the mask plate is getting smaller and smaller, and it is approaching the theoretical limit of the exposure system. Therefore, the imaging of the substrate surface after photolithography will produce serious distortion, that is, optical proximity Effect (Optical Proximity Effect, OPE). As lithography technology gradually faces higher requirements and challenges, double patterning technology (Double Patterning Technology, DPT), as ...

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Problems solved by technology

[0005] However, when the gap 10 between the two lines 20 is too narrow, the size of the vertical bars 20 ″ will also be very narrow, so that the optical proximity effect will affect the vertical bars when the process window of photolithography is too small. The influence caused by 20'' is very large, and the imaging produced by the second separation pattern on the substrate is often as Figure 2C As shown, severe distortion is produced, which affects the accuracy of lithography

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