198 results about "Exposure technique" patented technology

An integrated circuit fabrication process as described herein employs a double photoresist exposure technique. After creation of a first pattern of photoresist features on a wafer, a second photoresist layer is formed over the first pattern of photoresist features. The second photoresist layer is subjected to a reflow step that softens and relaxes the second photoresist material. This reflow step causes the exposed surface of the second photoresist layer to become substantially planar. Thereafter, the second photoresist layer can be exposed and developed to create a second pattern of photoresist features on the wafer. The planar surface of the second photoresist layer, which results from the reflow step, facilitates the creation of accurate, precise, and “high fidelity” photoresist features from the second photoresist material.

Systems, methods, and a computer readable medium for performing auto exposure (AE) techniques that are beneficial in variable lighting conditions—and particularly applicable to handheld and / or mobile videoconferencing applications—are disclosed herein. Handheld and / or mobile videoconferencing applications—unlike their fixed camera counterparts—are often exposed to a wide variety of rapidly changing lighting and scene conditions, and thus face a difficult trade-off between adjusting exposure parameter values too frequently or not frequently enough. In personal electronic devices executing such handheld and / or mobile videoconferencing applications, it may be desirable to: use a small, centered, and center-weighted exposure metering region; set a relatively low brightness target value; and adjust the camera's exposure parameter values according to a distance-dependent convergence speed function. The use of such techniques, in conjunction with a relatively large stability region, may also improve the quality of a video encoder's temporal predictions—and thus video quality—in videoconferencing applications.

The present invention discloses a method of manufacturing a super large wide-angle super high-speed response LCD apparatus by using a photolithographic process for three times. The invention adopts a halftone exposure technology and a nitrogen ion doped technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an alignment control electrode. A P-CVD apparatus is provided for forming a passivation layer into a film by using a masking deposition method, or an ink-jet coating method is used to coat a protective layer at a partial area, and a photolithographic process is performed for three times to manufacture a TFT matrix substrate of the super large wide-angle super high-speed response LCD.

Substantial reduction of the radiation dose in computed tomography (CT) imaging is shown using a machine-learning dose-reduction technique. Techniques are provided that (1) enhance low-radiation dosage images, beyond just reducing noise, and (2) may be combined with other approaches, such as adaptive exposure techniques and iterative reconstruction, for radiation dose reduction.

A hand-supportable digital imaging-based bar code symbol reading device comprises: an automatic object presence and range detection subsystem; an area-type image formation and detection subsystem having a CMOS area-type image detection array, and narrow-area and wide area image capture modes of operation; an LED-based illumination subsystem having LED arrays, and narrow-area and wide area illumination modes of operation; an automatic light exposure measurement and illumination control subsystem; an image capturing and buffering subsystem; and an image-processing bar code symbol reading subsystem. The LED arrays associated with the LED-based illumination subsystem are automatically driven in a precise manner to globally expose the CMOS area-type image detection array with LED-based illumination only when substantially all of its rows of pixels are in a state of integration and have a common integration time, thereby enabling the image capturing and buffering subsystem to capture high quality images independent of the relative motion between the hand-supportable digital imaging-based bar code symbol reading device and the object.

A method and apparatus for applying exposure compensation to an image. Exposure correction limits inclusion of, but does not ignore, image highlights and lowlights.

An optical display, and method for forming an optical display, having improved antireflection properties and durability is formed by applying a transferable antireflection material to an optical substrate through the use of an in-mold or heat press technique or alternatively by an ultraviolet exposure technique. The transferable antireflection material is formed prior to application to the substrate and has at least a low refractive index layer and a high refractive index layer coupled to a release film. The low index reflection layer is preferably a silicone-modified fluoropolymer material having good durability, low refractivity, and appropriate adhesion to the release layer and subsequently applied high index refraction layer. The optical display is then coupled to a housing of an article for use.

An exposure apparatus for exposing a substrate to light via a reticle. The apparatus includes a substrate stage configured to hold the substrate and to move, a projection optical system configured to project a pattern of the reticle onto the substrate, a flat plate having a surface whose height is substantially the same as that of the substrate held by the substrate stage and to move, a supply unit having a supply nozzle and configured to supply liquid through the supply nozzle to a gap formed between a final surface of the projection optical system and at least one of the substrate held by the substrate stage and the flat plate, a recovery unit having a recovery nozzle and configured to recover liquid filling the gap through the recovery nozzle, and a sensor arranged on the flat plate and configured to measure illuminance.

The photomask 10 comprises a substrate 11, a shot region 12 positioned on the substrate 11, mask patterns 13 formed within the shot region 12, and mask magnification information 14x formed in the outside exposure area (recto area) 14 of the shot region 12. The entire shot region 12 including the mask patterns 13 is elongated in the scanning direction (Y direction) indicated by the arrow. The mask magnifications of the mask pattern 13 are set to a magnitude of 4 in the X direction and a magnitude of 8 in the Y direction, for example. When the step-and-scan exposure technique is carried out using such a photomask in which the mask magnifications in the X and Y directions are different, a high-definition wafer having an equivalent longitudinal and transverse ratio can be transferred.

A radiographic X-ray apparatus is equipped with multiple devices for the acquisition of anatomical data, in particular cameras. These devices are used to facilitate and automate the imaging process, providing: before exposure the automated identification of the specific anatomical features of the patient and the optimized presetting of the exposure technique factors and projection geometry, tailored on the actual anatomy of the patient; during exposure the optimized X-ray dose modulation, either automatically or selected by the operator, in order to correctly expose the various regions of interest, and accordingly impart reduced dose to other body parts, according to the actual anatomy of the patient and imaging requirements; after exposure the possibility to complement the radiographic image with additional information about the internal and external anatomy, providing valuable tools for the medical analysis and diagnosis.

The present invention discloses a method of manufacturing a super large wide-angle super high-speed response LCD apparatus by using a photolithographic process for three times. The invention adopts a halftone exposure technology and a nitrogen ion doped technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an alignment control electrode. A P-CVD apparatus is provided for forming a passivation layer into a film by using a masking deposition method, or an ink-jet coating method is used to coat a protective layer at a partial area, and a photolithographic process is performed for three times to manufacture a TFT matrix substrate of the super large wide-angle super high-speed response LCD.

A method of forming minimally spaced word lines is described. A double exposure technique is employed at the gate formation level. A small trench is defined through gate stack layers by using a tapered etch or spacers to achieve the desired width of the trench. A filler material fills the trench and forms a filler plug. The gate layers adjacent to the trench are then patterned and etched and the filler plug is removed to obtain gate stacks spaced apart by a distance of less than about 400 Angstroms.

The invention belongs to the technical field of image exposure, and relates to an automatic exposure control method. The automatic exposure control method comprises the steps of S1, carrying out imagecollected by using binocular vision and an active structural light source projection method, and obtaining the last image collected each time; S2, obtaining the average brightness of the image by using a dynamic partitioning and dynamic weight coefficient adjusting method; S3, judging whether the average brightness of the image is within a target brightness range or not, if so, not carrying out exposure compensation and terminating the automatic exposure control, otherwise, entering the step S4; and S4, obtaining the difference between the average brightness of the image and the target brightness, selecting the corresponding step size for exposure compensation according to the difference and returning back to the step S1. The automatic exposure control method soles the problems of great noise signal, insufficient or excessive exposure of a target area due to excessive contrast between the target object and the background, excessively long adjustment time and excessively great difference between the image brightness and the target brightness in the prior art.

A system and method of auto-exposure control is provided for image acquisition hardware using three dimensional information to identify a region(s) of interest within an acquired 2D image or images upon which to apply traditional auto-exposure techniques. By performing auto-exposure analysis over the region of interest, the acquisition property settings can be assigned such that the light levels within the region of interest fall within the linear range, producing sufficient grayscale information for identifying particular objects and profiles in subsequently acquired images. For example, in a machine vision application that detects people passing through a doorway, the region of interest can be the portion of the 2D image that generated 3D features of a head and shoulders profile within a 3D model of the doorway scene. With higher quality images, more accurate detection of people candidates within the monitored scene results.

A scanning exposure apparatus includes an optical system which projects a pattern of an original onto a substrate, a stage which holds the substrate and moves in a scanning direction perpendicular to an optical axis of said optical system, a measurement system which measures a position, in a direction of the optical axis, of a surface region of the substrate, and a control system which performs feedback control of a position of said stage by generating data of a target position, in the direction of the optical axis, of said stage based on data of the position of the surface region measured by said measurement system, and performs feedforward control of the position of said stage by adding data of a surface shape of the substrate obtained in advance to the data of the target position, while moving said stage in the scanning direction.

The invention provides a preparation method of a large-area sequential controllable surface-enhanced Raman active substrate. The preparation method comprises the following steps of: step 1: depositing a metal thin film on the surface of a clean liner by using an electron beam evaporation technology; step 2: spinning a photoresist on the metal thin film and prebaking; step 3: utilizing a holographic interference exposure technology to obtain an imaged photoresist mask plate so as to form a substrate composed of the liner, the metal thin film and the imaged photoresist mask plate; step 4: etching the substrate, wherein the etching depth reaches the surface of the liner; and step 5: removing the residual photoresist to form the large-area sequential controllable surface-enhanced Raman active substrate. The prepared large-area sequential controllable surface-enhanced Raman active substrate prepared by the method has the advantages of large area, sequential and controllable structure, good repeatability, high stability, low manufacturing cost, simplicity in operation and the like.

The present invention discloses a double-exposure method comprising a first lithography process and a second lithography process. Between the first and the second lithography process, coat Resolution Enhancement Lithography Assisted by Chemical Shrink (RELACS) material on the first photoresist pattern, promote thermal crosslinking reaction at the interface between the RELACS materials and the first photoresist pattern; afterwards, remove the RELACS material which does not crosslink with the first photoresist pattern. This method not only realizes higher lithography resolution, but also avoids the adverse effects of the second exposure on the first photoresist pattern in double-exposure technology.

The invention discloses a double-beam holographic interference multiple exposure method for preparing a two-dimensional photonic crystal, which comprises the steps of: washing of a semiconductor substrate; spin coating of a photoresist; prebaking of the photoresist; multiple crossover exposure in a double-beam holographic system; development; postbaking of the photoresist; isotropic corrosion of the semiconductor substrate; and removal of the photoresist. Compared with the prior multi-beam holographic exposure technology and electron beam exposure technology and the like, the double-beam holographic interference multiple exposure method for preparing the two-dimensional photonic crystal has the advantages of simple and convenient operation, high precision and low cost, can conveniently prepare various two-dimensional photonic crystal lattices with large area, no defects, and controllable duty factor and depth, and meet the demand on preparing the photonic crystals.

Ultrafine patterns with dimensions smaller than the chemical and optical limits of lithography are formed by superimposing two photoresist patterns using a double exposure technique. Embodiments include forming a first resist pattern over a target layer to be patterned, forming a protective cover layer over the first resist pattern, forming a second resist pattern on the cover layer superimposed over the first resist pattern while the cover layer protects the first resist pattern, selectively etching the cover layer with high selectivity with respect to the first and second resist patterns leaving an ultrafine target pattern defined by the first and second resist patterns, and etching the underlying target layer using the superimposed first and second resist patterns as a mask.

An atmosphere control technique for an exposure apparatus. An exposure apparatus to which this technique is applied includes, for example, a chamber which contains a space through which exposure light passes, a circulation system which has a path and circulates an inert gas through the path and the chamber, at least one valve provided in the path, a supply system which has a supply port at one end of a zone of the path defined by the at least one valve and supplies an inert gas to the supply port, and an exhaust system which has an exhaust port at the other end of the zone and exhausts a gas from the exhaust port.

The invention discloses a picture taking method comprising the following steps: receiving a double exposure shooting instruction input by a user; entering a double exposure shooting mode according to the double exposure shooting instruction; adjusting shooting parameters of a main camera and an auxiliary camera of a rotatable double camera of a mobile terminal; making the main camera and the auxiliary camera shoot the same target to obtain first image information and second image information of the target; and integrating the first image information and the second image information to obtain a double exposure image of the target. An embodiment of the invention further discloses a mobile terminal. By adopting the picture taking method and the mobile terminal, a double exposure image can be generated simply and conveniently, and the popularization of the double exposure technology is facilitated.

The invention provides a method for preparing a patterned substrate from a heterogeneous material. The method comprises the following steps: preparing periodic patterns from a heterogeneous material; growing a single-crystal heterogeneous material with a certain thickness on a sapphire substrate; evenly coating photoresist on the sapphire substrate, on which the single-crystal heterogeneous material with a certain thickness grows, by using a spin-coating technique; forming the periodic patterns on the photoresist through exposure by using an exposure technique; and enabling the photoresist to show the periodic patterns by using a development technique, thus obtaining the periodic patterns prepared from the heterogeneous material; or proportionally layering the heterogeneous material and the sapphire to jointly form the patterned substrate having periodic patterns on the sapphire surface. The preparation method breaks through the characteristic that the traditional patterned substrate only uses the sapphire substrate to form periodic patterns, thereby achieving the purposes of enhancing the crystal growth quality and improving the light producing efficiency of a device.

An optical display, and method for forming an optical display, having improved antireflection properties and durability is formed by applying a transferable antireflection material to an optical substrate through the use of an in-mold or heat press technique or alternatively by an ultraviolet exposure technique. The transferable antireflection material is formed prior to application to the substrate and has at least a low refractive index layer and a high refractive index layer coupled to a release film. The low index reflection layer is preferably a silicon-modified fluoropolymer material having good durability, low refractivity, and appropriate adhesion to the release layer and subsequently applied high index refraction layer. The optical display is then coupled to a housing of an article for use.

An image processor, which determines appropriate exposure parameters for a shutter assembly in a camera. The image processor may computationally determine a region of interest in a scene sought to be captured, and set the parameters to ensure that the exposure parameters are set to capture an image of the scene with the region of interest having a desired brightness level. In an embodiment, pixel values of multiple frames (each frame with a corresponding set of configuration parameters of the shutter assembly) may be examined to determine the frame having pixel values with the region having the desired brightness level. The shutter assembly may be configured with the parameters corresponding to such a frame to provide an auto-exposure feature.

A method for fabricating an electronic device is disclosed, the method comprising depositing a first layer of insulator over a substrate, depositing a first layer portion over the insulator using a printing technique, and removing a portion of the insulator using a photo-exposure technique or an etching technique, using the first layer portion as a mask. A vertical short channel thin film transistor is also disclosed, the transistor comprising a substrate, a first electrode formed over the substrate, a first layer of insulator formed over a portion of the first electrode, a second electrode formed over the first layer of insulator, a semiconductor layer forming a channel between the first and second electrodes, a dielectric layer formed over the semiconductor layer, and a gate electrode formed over the dielectric layer, wherein the gate electrode spans at least a part of the channel between the first and second electrodes.

The invention provides a mask-plate bearing bed which comprises a mask-plate holder. The installing position of a first mask plate and the installing position of a second mask plate are arranged on the mask-plate holder, the installing position of a mark plate is arranged on the middle position of the mask-plate holder, a plurality of mask-plate vacuum absorbing slots are respectively arranged in the installing positions of the first mask plate and the second mask plate to be used for absorbing and fixing the mask plates, the installing position of a pyramid lens is arranged on one side of the mask-plate holder to be used for installing a pyramid prism, the installing position of a micromotor is arranged on the mask-plate holder, and the coating surface of a reflector is on one side surface of the mask-plate holder, thus, the invention uses the mask-plate bearing bed for orderly and independently exposing two different mask plates on the same rubberized layer, and the double-exposure technology can decompose a 2D image into two 1D images which can be easily and accurately generated.

The invention discloses a high dynamic range imaging method of a camera array, and aims at solving the technical problem of low dynamic range of the existing camera array imaging method. According to the technical scheme, the method is that the maximum brightness and the minimum brightness of a target scene are obtained through a light meter or a built-in light detector in the camera so as to gain a group of optimized exposure bracketing grades; the camera combination participating in exposure in the array is determined, and the camera scene is synchronously shot through the camera combination so as to obtain a group of low dynamic range image containing different exposure settings of the target scene; the group of low dynamic range images is geometrically corrected according to the geometric relationship between the camera layout and the target scene to obtain a group of corrected low dynamic range images which cover the target scene dynamic range. According to the method, the total exposure time, of using the multi-exposure technology to obtain the high dynamic range image, which is equal to the sum of the times of a plurality of exposure, is reduced to the longest exposure time of the exposure bracketing combination; the problems of large time consumption due to exposing the static scene high dynamic range at a plurality of times and ghosting of imaging of the dynamic scene high dynamic range can be solved.

Advanced techniques for programmable photolithograhy provide enhanced resolution and other aspects of a photolithography system. The pseudo-inverse of a matrix is applied to the results of a calculation to control exposure energies.

A temperature control technique and an exposure technique are provided with which high temperature control accuracy can be realized even when a device, which causes thermal fluctuation depending on a temperature-controlled fluid, is used. A gas recovered from a reticle chamber as the temperature control objective, and a high purity purge gas supplied from a gas supply source are mixed in a mixing section. The temperature of the mixed gas is lowered by a refrigerator. Subsequently, the humidity of the gas is measured by a temperature sensor. The gas is then supplied to the reticle chamber via a heating mechanism, a chemical filter which absorbs or generates heat depending on the humidity and a dust protective filter. The heating amount to the gas by the heating mechanism is controlled based on temperature information by a temperature sensor in the reticle chamber and humidity information by the humidity sensor.

A method of forming minimally spaced word lines is disclosed. A double exposure technique is employed at the gate formation level. A small trench is defined through gate stack layers by using a tapered etch or spacers to achieve the desired width of the trench. A filler material fills the trench and forms a filler plug. The gate layers adjacent to the trench are then patterned and etched and the filler plug is removed to obtain gate stacks spaced apart by a distance of less than about 400 Angstroms.