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Double-beam holographic interference multiple exposure method for preparing two-dimensional photonic crystal

A two-dimensional photonic crystal and holographic interference technology, applied in the field of semiconductor optoelectronic devices, can solve problems such as affecting the periodicity and uniformity of photonic crystal lattices, complicating experimental equipment, affecting interference patterns, etc., achieving low price and simple and convenient operation. , high precision effect

Inactive Publication Date: 2009-10-28
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the multi-beam holographic exposure technology involves the interference of three or more beams, which complicates the experimental device. The control of beam energy and polarization direction and the prevention of mechanical vibration will affect the quality of the interference pattern, thereby affecting the photonic crystal lattice. periodicity and uniformity
[0007] The usual electronic digital exposure technology can meet this requirement due to its extremely high resolution, but it is expensive and inconvenient to use

Method used

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  • Double-beam holographic interference multiple exposure method for preparing two-dimensional photonic crystal
  • Double-beam holographic interference multiple exposure method for preparing two-dimensional photonic crystal
  • Double-beam holographic interference multiple exposure method for preparing two-dimensional photonic crystal

Examples

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Comparison scheme
Effect test

example 1

[0087] Example 1: Preparation of two-dimensional photonic crystals with square lattice circular hole elements

[0088] It can be known from formula (2) that adjusting the angle between two beams of coherent light can change the period of interference fringes. To this end, turn the motorized turntable so that the angle θ between the light beam and the high-reflection flat mirror fixed on the turntable is 10.6°, and the interference fringe period is 1.2 μm. The photoresist sample that has been properly pre-baked is fixed on the other end of the rotating bracket and exposed for 90 seconds. Exposure time is controlled by an electronic timer and shutter. After the exposure, the sample was rotated 90° for the second exposure, and the exposure time was 100 seconds. Next, put the sample into a developing solution prepared by tetramethylammonium hydroxide and water at a volume ratio of 1:10 for development, then harden the film, corrode, remove the glue, rinse with deionized water, a...

example 2

[0090] Example 2: Preparation of two-dimensional photonic crystals with rectangular lattice and elliptical hole primitives

[0091] On the InP substrate, the photoresist will be spin-coated and placed in such as image 3 In the interference field shown, θ is 10.6°. After exposure for 90 seconds, turn the high-reflectivity plane mirror to the position where θ is 5.28°, and rotate the sample by 90° for the second exposure, and the exposure time is also 90 seconds. Next, put the sample into a developing solution prepared by tetramethylammonium hydroxide and water at a volume ratio of 1:10 for development, then harden the film, corrode, remove the glue, rinse with deionized water, and blow dry with nitrogen. Among them, the development time and etching time need to be precisely controlled to control the duty cycle and depth of the circular hole.

[0092] Figure 11 It is the pattern of the photoresist under a 1500 times optical microscope, the lattice constants are 1.2 μm and 2...

example 3

[0093] Example 3: Preparation of two-dimensional photonic crystals with circular holes in a hexagonal lattice

[0094] On the InP substrate, the photoresist will be spin-coated and placed in such as image 3 In the interference field shown, θ is 10.6°. After 60 seconds of exposure, keep the rotation angle θ of the electric rotary table unchanged, and at the same time rotate the sample by ±60° for the second and third exposures, and the exposure time remains unchanged. Then put the sample into a developing solution prepared by tetramethylammonium hydroxide and water at a volume ratio of 1:10 for development, then harden the film, corrode, remove the glue, rinse with deionized water, and blow dry with nitrogen. Among them, the development time and etching time need to be precisely controlled to control the duty cycle and depth of the circular hole.

[0095] Figure 13 It is a pattern of photoresist under a 1500 times optical microscope, the lattice constants are 1.2 μm, the t...

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Abstract

The invention discloses a double-beam holographic interference multiple exposure method for preparing a two-dimensional photonic crystal, which comprises the steps of: washing of a semiconductor substrate; spin coating of a photoresist; prebaking of the photoresist; multiple crossover exposure in a double-beam holographic system; development; postbaking of the photoresist; isotropic corrosion of the semiconductor substrate; and removal of the photoresist. Compared with the prior multi-beam holographic exposure technology and electron beam exposure technology and the like, the double-beam holographic interference multiple exposure method for preparing the two-dimensional photonic crystal has the advantages of simple and convenient operation, high precision and low cost, can conveniently prepare various two-dimensional photonic crystal lattices with large area, no defects, and controllable duty factor and depth, and meet the demand on preparing the photonic crystals.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a double-beam holographic interference multiple exposure method for preparing two-dimensional photonic crystals. Background technique [0002] Since Bell Laboratories [E. Yablonovitch, Inhibited Spontaneous Emission in Solid-State Physics and Electronics, Phys. Rev. Lett.58, 2059 (1987)] and Princeton University [S. John, Strong localization of photos in certain disordered dielectric superlattices, Since Phys.Rev.Lett.58, 2486 (1987)] independently proposed the concept of photonic crystals in 1987, photonic crystals have attracted widespread attention worldwide and set off a research boom. Its discovery provides a good material platform for the study of quantum electrodynamics, will also play a revolutionary role in the integration of photons and optoelectronics, greatly promote the development of all-optical networks, and open the door for informatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F7/004G03F7/16G03F7/22G03F7/20G03F7/30G03F7/36G03F7/26
Inventor 陆全勇张伟王利军刘峰奇
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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