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Sputtering target and manufacturing method thereof

A manufacturing method and sputtering target technology, applied in the field of sputtering targets, can solve problems such as abnormal discharge, generation of spots, increase of abnormal discharge, etc., achieve high mass productivity, suppress moisture absorption and discoloration, and suppress abnormal discharge effects

Active Publication Date: 2016-08-24
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, Na compounds tend to adsorb moisture in the environment, and thus discoloration and spots often occur on the surface of the target, so there is a disadvantage that the characteristics of the solar cell finally manufactured from the target become extremely unstable
[0022] In addition, there are disadvantages such as increased abnormal discharge during sputtering due to the addition of a large amount of Na compound, lower mechanical strength, and easy cracking.
That is, there is a problem that the mechanical strength of the target decreases due to the addition of a large amount of Na compounds that are non-conductive, difficult to sinter, and have low mechanical strength, and the defect generation rate increases during machining, so that Na compounds are easily generated during sputtering. Abnormal discharge caused by

Method used

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  • Sputtering target and manufacturing method thereof
  • Sputtering target and manufacturing method thereof
  • Sputtering target and manufacturing method thereof

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Experimental program
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Effect test

preparation example Construction

[0091]

[0092] In order to prepare the mixed powder of Na compound powder and Cu-Ga powder, it is possible to use different pulverization methods and mixing methods using pulverization and mixing devices (for example, ball mills, jet mills, Henschel mixers, attritors, etc.). The methods of (1) to (3) below.

[0093] (1) When crushing Na compound powder and mixing with Cu-Ga powder are performed separately

[0094] The average secondary particle size of the Na compound obtained by crushing is preferably 1 to 5 μm. The crushing step is preferably performed in a dry environment with a humidity RH of 40% or less. As described above, the crushed Na compound powder thus obtained is preferably dried at 70° C. or higher before mixing.

[0095] Next, using a dry mixing device, the Na compound powder and the Cu—Ga powder prepared with the target composition were mixed in a dry environment with a relative humidity RH of 40% or less to produce a mixed powder. In addition, mixing is ...

Embodiment

[0124] Next, the evaluation results of the sputtering target and its manufacturing method according to the present invention will be described with reference to examples prepared according to the above-mentioned embodiment.

[0125] "Example"

[0126] First, Cu-Ga alloy powder having the composition and particle size shown in Table 1, Cu powder (4N in purity) and Na compound powder with a purity of 3N and a primary average particle size of 1 μm were blended into the formula shown in Table 1. Quantity, make the mixed powder of embodiment 1~24. These mixed powders were dried in the vacuum environment specified above. Thereafter, the dried raw material powder was put into a polyethylene bottle with a capacity of 10 L, and zirconia balls with a diameter of 2 mm dried at 80° C. for 10 hours were also put in and mixed by a ball mill for a specified time. This mixing was performed in a nitrogen atmosphere. In addition, zirconia balls with a diameter of 2 mm have the effect of bein...

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Abstract

The present invention provides a sputtering target containing a high concentration of Na, which can suppress discoloration, generation of spots, and abnormal discharge, and has high strength and is not easily broken, and a manufacturing method thereof. The sputtering target of the present invention has the following composition: the metal components other than F, S, and Se as the sputtering target contain Ga: 10-40 at%, Na: 1.0-15 at%, and the remainder is composed of Cu and unavoidable impurities. The composition contains Na in the state of Na compound composed of at least one of sodium fluoride, sodium sulfide and sodium selenide, the theoretical density ratio is 90% or more, the flexural strength is 100N / mm2 or more, and the volume resistivity is 1mΩ · cm or less, within an area of ​​1 cm2 on the target surface, less than one agglomerate of at least one of sodium fluoride, sodium sulfide, and sodium selenide of 0.05 mm2 or more exists on average.

Description

technical field [0001] The present invention relates to a sputtering target used when forming a Cu—In—Ga—Se compound film (hereinafter, sometimes abbreviated as CIGS film) for forming a light absorbing layer of a thin-film solar cell, and a method for manufacturing the same. Background technique [0002] In recent years, thin-film solar cells formed of chalcopyrite-based compound semiconductors have been put into practical use. The thin-film solar cells formed of the compound semiconductors have a basic structure in which Mo as a positive electrode is formed on a soda-lime glass substrate. electrode layer, on which a light absorbing layer made of a CIGS film is formed, a buffer layer made of ZnS, CdS, etc. is formed on the light absorbing layer, and a negative electrode is formed on the buffer layer. transparent electrode layer. [0003] As a method for forming the above-mentioned light-absorbing layer, a method of forming a film by a vapor deposition method is known. Altho...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34
CPCC23C14/3414C22C1/0425C22C32/0089C23C14/0623B22F2999/00H01J37/3429B22F3/1007B22F2201/20C23C14/08C23C14/087C23C14/35B22F3/10B22F2301/00
Inventor 张守斌梅本启太小路雅弘
Owner MITSUBISHI MATERIALS CORP
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