A kind of determination method of substance content in composite silicon carbide
A composite silicon carbide and substance content technology, which is used in the preparation of test samples, the measurement of color/spectral properties, and the analysis of materials by chemical reactions. It can solve the problem that composite silicon carbide has no mature detection methods and cannot be fully applied Determination of composite silicon carbide, no national standards, etc.
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Embodiment 1
[0058] A method for determining the content of substances in composite silicon carbide, wherein the composite silicon carbide contains material elements such as free carbon, silicon carbide, aluminum oxide, calcium, titanium, phosphorus, etc., characterized in that the determination of the content of substances in the composite silicon carbide The method comprises the following process steps:
[0059] 1) Place the composite silicon carbide sample in a platinum dish for low-temperature ashing;
[0060] 2) Place the composite silicon carbide sample in step 1) in a high-temperature furnace, gradually raise the temperature to 700°C, and burn it to constant weight in this environment; weigh it after completion;
[0061] 3) Put the composite silicon carbide sample burnt in step 2) in a platinum dish and treat it with hydrofluoric acid, nitric acid, and sulfuric acid in sequence, and add potassium pyrosulfate, gradually heat to 200°C, keep it for 10 minutes, and then heat to 790°C, ...
Embodiment 2
[0126] A method for determining the content of substances in composite silicon carbide, wherein the composite silicon carbide contains material elements such as free carbon, silicon carbide, aluminum oxide, calcium, titanium, phosphorus, etc., characterized in that the determination of the content of substances in the composite silicon carbide The method comprises the following process steps:
[0127] 1) Place the composite silicon carbide sample in a platinum dish for low-temperature ashing;
[0128] 2) Place the composite silicon carbide sample in step 1) in a high-temperature furnace, gradually raise the temperature to 750°C, and burn it to constant weight in this environment; weigh it after completion;
[0129] 3) Put the composite silicon carbide sample burnt in step 2) in a platinum dish for treatment with hydrofluoric acid, nitric acid, and sulfuric acid in sequence, and add potassium pyrosulfate, gradually heat to 300°C, keep it for 10 minutes, and then heat to 810°C an...
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