Photodetector and manufacturing method thereof
A technology for photodetectors and manufacturing methods, applied in radiation control devices, radiation intensity measurements, etc., can solve problems such as reduced process yields and easy deviations, and achieve the effect of improving process yields and image resolution
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[0029] Figure 1A to Figure 1F It is a schematic cross-sectional view of the flow of the method of manufacturing the photodetector according to the first embodiment of the present invention.
[0030] Please refer to Figure 1A , First, a substrate 100 is provided. In this embodiment, the substrate 100 is a flexible substrate, such as a plastic substrate. Next, a sensing element array 102 is formed on the substrate 100, and the sensing element array 102 includes a plurality of sensing units 101. In detail, the sensing unit 101 is used to receive light in a specific wavelength range. In this embodiment, the sensing unit 101 is, for example, an amorphous silicon photodiode, and its absorption spectrum is, for example, in the wavelength range of 450 nm to 620 nm. In addition, in this embodiment, the pitch P1 of the sensing unit 101 is between 130 μm and 200 μm. In addition, in this embodiment, after forming the sensing element array 102, it further includes forming a flat layer 103...
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