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Photodetector and manufacturing method thereof

A technology for photodetectors and manufacturing methods, applied in radiation control devices, radiation intensity measurements, etc., can solve problems such as reduced process yields and easy deviations, and achieve the effect of improving process yields and image resolution

Active Publication Date: 2017-08-15
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the method of alignment bonding is prone to deviation, resulting in a decrease in process yield

Method used

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  • Photodetector and manufacturing method thereof
  • Photodetector and manufacturing method thereof
  • Photodetector and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0029] Figure 1A to Figure 1F It is a schematic cross-sectional view of the flow of the method of manufacturing the photodetector according to the first embodiment of the present invention.

[0030] Please refer to Figure 1A , First, a substrate 100 is provided. In this embodiment, the substrate 100 is a flexible substrate, such as a plastic substrate. Next, a sensing element array 102 is formed on the substrate 100, and the sensing element array 102 includes a plurality of sensing units 101. In detail, the sensing unit 101 is used to receive light in a specific wavelength range. In this embodiment, the sensing unit 101 is, for example, an amorphous silicon photodiode, and its absorption spectrum is, for example, in the wavelength range of 450 nm to 620 nm. In addition, in this embodiment, the pitch P1 of the sensing unit 101 is between 130 μm and 200 μm. In addition, in this embodiment, after forming the sensing element array 102, it further includes forming a flat layer 103...

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PUM

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Abstract

The invention provides a photodetector and a manufacturing method thereof, and the method includes the following steps. Substrates are provided. A sensing element array is formed on the substrate, wherein the sensing element array includes a plurality of sensing units. A plurality of scintillator units are formed on the sensing element array, wherein the scintillator units are separated from each other, and each scintillator unit corresponds to a sensing unit. A reflective layer covering the scintillator unit is formed. A cover layer covering the reflective layer is formed. The present invention can directly form scintillator units that are separated from each other and respectively correspond to one sensing unit on the sensing element array, thereby not only producing a large-area photodetector, but also improving the process yield and image analysis of the photodetector Spend.

Description

Technical field [0001] The invention relates to a photodetector and a manufacturing method thereof, in particular to a photodetector with good image resolution and sensitivity and a manufacturing method thereof. Background technique [0002] X-ray images are one of the important tools for medical diagnosis. At present, X-ray image imaging technology requires the use of X-ray detectors that can absorb light energy and convert it into electronic signals. The X-ray detector usually includes a scintillator that can convert X-rays into visible light. Generally speaking, the thicker the scintillator thickness is beneficial to increase the sensitivity, but as the thickness of the scintillator increases, the converted visible light is likely to scatter and cause serious optical crosstalk, which makes the image resolution decline. This is because the known X-ray detector is usually assembled by aligning a scintillator film layer and the sensing array. In addition, the alignment and bon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146G01T1/20
Inventor 陈德铭王腾岳林宗毅
Owner AU OPTRONICS CORP