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Radiant heating element, radiant heater and MOCVD reactor

A radiant heater, radiant heating technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of heating the substrate to 1400 ℃ and higher temperature, to improve the structure and increase the power Effect

Inactive Publication Date: 2014-09-17
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the heating element in the prior art radiation heating method cannot heat the substrate to a temperature of 1400°C or higher. A radiation heating element above the disk that heats the substrate to 1400°C and above, a heater made of the radiation heating element, and a MOCVD reactor that uses the heater and is suitable for higher temperatures meet the requirements for depositing high-quality AlGaN / AlN Requirements of epitaxy process on substrate temperature

Method used

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  • Radiant heating element, radiant heater and MOCVD reactor
  • Radiant heating element, radiant heater and MOCVD reactor
  • Radiant heating element, radiant heater and MOCVD reactor

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Embodiment Construction

[0031] A radiant heating element, which is formed by winding a heating sheet 17 with axis symmetry, and the section of the heating sheet 17 is a special-shaped section, such as image 3 As shown, the section of the heating plate 17 is V-shaped; Figure 4 As shown, the section of the heating plate 17 is U-shaped; Figure 5 As shown, the section of the heating plate 17 is trapezoidal.

[0032] Such as Image 6 Shown, a kind of MOCVD reactor, comprises reactor housing 8, 4 groups of gas ports 1,2,3,4 of reactor housing 8 top surface and reactor housing 8 inner upper part is used for placing substrate 15 The substrate carrier 5, the radiation heater below the substrate carrier 5, the gas distribution device 6 on the top surface of the reactor shell 8, the center of the bottom of the substrate carrier 5 is provided with a rotating support shaft 11; the reactor shell The bottom of the body 8 is provided with a suction port 10 . The first gas interface 1 is connected to the first...

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Abstract

The invention relates to the field of metal organic chemical vapor deposition equipment, and in particular to a radiant heating element, a radiant heater and an MOCVD reactor. The heating element is formed by winding of heating sheet in an axial symmetrical way, the section of the heating sheet is a special-shaped section, the radiant heater adopts the heating element with the special-shaped section, and the MOCVD reactor is made of the radiant heater. Under the condition of using radiation heating, the invention improves the structure and shape of the heating element to enhance bear power of the heating element. The matched high temperature MOCVD reactor solves the problem that the currently widely-used MOCVD reactor can not provide the high temperature conditions needed for epitaxial technology of high quality AlN and AlGaN growth.

Description

technical field [0001] The invention relates to the field of metal organic compound chemical vapor deposition equipment, in particular to a radiation heating element, a radiation heater and an MOCVD reactor. Background technique [0002] Metal-organic Chemical Vapor Deposition (MOCVD) technology has the advantages of fast film growth rate and good growth quality. Appropriate epitaxy techniques. AlGaN / GaN devices prepared by MOCVD epitaxial technology have a wide range of uses, such as AlGaN / GaN high electron mobility transistor (AlGaN / GaN HEMT) devices are mainly used for the production of high-frequency and high-power devices and circuits that are resistant to high temperature and radiation. It is the first choice for microwave power devices in the future, and will become the core component of modern equipment such as communication, radar, guidance, space defense and electronic countermeasures; AlGaN / GaN photodetector devices include ultraviolet detectors, ISBT infrared de...

Claims

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Application Information

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IPC IPC(8): C23C16/48C23C16/18
Inventor 罗才旺魏唯陈特超舒勇东
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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