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A method for removing impurities phosphorus and boron in metal silicon

A technology for metal silicon and impurities, which is applied in the field of solar-grade polysilicon purification, can solve the problem that the phosphorus removal effect needs to be improved, etc., and achieve the effects of convenient industrial production, easy operation and cost reduction.

Active Publication Date: 2016-08-24
福建苍穹硅业有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method needs to be reacted in an argon environment and the phosphorus removal effect needs to be improved

Method used

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  • A method for removing impurities phosphorus and boron in metal silicon

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Weigh 50kg of raw industrial silicon, put the silicon block into a graphite crucible of an intermediate frequency induction furnace and heat it, and melt it into a silicon liquid at a heating temperature of 1700°C; weigh 50kg of a slagging agent, of which CaCO 3 The weight is 40kg, Na 2 CO 3 The weight is 5kg, K 2 CO 3 The weight is 4kg, the rest is Li 2 CO 3 , put the slagging agent into the silicon liquid, and continue heating to completely melt the slagging agent; preheat the graphite rod with the vent hole, insert the vent rod into the silicon liquid after the preheating is sufficient, and start stirring with argon gas, The flow rate of the argon gas is 12L / min, and the aeration time is 20min. After the reaction is complete, it is kept for 30min at a temperature of 1600°C; After the silicon ingot is cooled, remove the slag on the surface of the silicon ingot; crush and grind the silicon ingot, and the particle size of the silicon powder is 60-200 mesh; use mixe...

Embodiment 2

[0034] Weigh 50kg of raw industrial silicon, put the silicon block into a graphite crucible of an intermediate frequency induction furnace and heat it, and melt it into a silicon liquid at a heating temperature of 1500°C; weigh 60kg of a slagging agent, of which CaCO 3 The weight is 30kg, MgCO 3 The weight is 6kg, Na 2 CO 3 The weight is 14kg, the rest is K 2 CO 3 , put the slagging agent into the silicon liquid, and continue heating to completely melt the slagging agent; preheat the graphite rod with the vent hole, insert the vent rod into the silicon liquid after the preheating is sufficient, and start stirring with argon gas, The flow rate of the argon gas is 5L / min, and the aeration time is 15min. After the reaction is complete, keep it warm for 20min at a temperature of 1650°C; After the silicon ingot is cooled, remove the slag on the surface of the silicon ingot; crush and grind the silicon ingot, the particle size of the silicon powder is 80-160 mesh; use mixed acid...

Embodiment 3

[0036]Weigh 50kg of raw industrial silicon, put the silicon block into a graphite crucible of an intermediate frequency induction furnace and heat it to melt into silicon liquid at a heating temperature of 1550°C; weigh 75kg of slagging agent, of which CaCO 3 The weight is 60kg, MgCO 3 The weight is 11.25kg, and the rest is K 2 CO 3 , put the slagging agent into the silicon liquid, and continue heating to completely melt the slagging agent; preheat the graphite rod with the vent hole, insert the vent rod into the silicon liquid after the preheating is sufficient, and start stirring with argon gas, The flow rate of the argon gas is 10L / min, the aeration time is 60min, after the reaction is complete, the holding time is 30min, and the holding temperature is 1700°C; then the silicon liquid after the reaction is poured into a crystallizer with a heating function to slowly solidify, After the silicon ingot is cooled, remove the slag on the surface of the silicon ingot; crush and ...

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Abstract

The invention relates to a method for removing impurity phosphorus and boron in metal silicon. The method comprises the following steps: putting silicon blocks into a graphite crucible of an intermediate frequency induction furnace and heating and melting them; The agent is completely melted; preheat the graphite rod with ventilation channels, insert the ventilation rod into the silicon liquid after the preheating is sufficient, and ventilate and stir; after the reaction is complete, keep it warm and stand; Solidify in the crystallizer; after the silicon ingot is cooled, remove the slag on the surface of the silicon ingot; crush and grind the silicon ingot, pickle, clean and dry the silicon powder to obtain purified low-phosphorus and boron polysilicon. The method has good effect of removing phosphorus and boron, and reduces the cost of purifying polysilicon.

Description

technical field [0001] The invention relates to the field of purification of solar-grade polysilicon, in particular to a method for preparing solar-grade polysilicon and removing impurities phosphorus and boron. Background technique [0002] In recent years, both at home and abroad are vigorously developing renewable energy, and solar energy is developing rapidly with its unique advantages. Silicon crystal solar cells have become the first choice for the development of solar cells due to their rich source of raw materials and high conversion efficiency. Polysilicon is the basic raw material for preparing silicon crystalline solar silicon. Polysilicon purification mainly includes improved Siemens method and physical method. The process of preparing high-purity polysilicon by the improved Siemens method is relatively complicated, the investment cost is high, the power consumption is large, and the intermediate product SiHCl 3 (or SiCl 4 ) is highly toxic and poses a safety...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/037
Inventor 李伟生谢兴源杨凤炳龚炳生
Owner 福建苍穹硅业有限责任公司
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