Polycrystalline silicon rod manufacturing method
A technology of polycrystalline silicon rods and manufacturing methods, applied in chemical instruments and methods, silicon compounds, gaseous chemical plating, etc., can solve the problems of high central temperature, central melting, collapse of silicon core wires, etc., and achieve high-efficiency manufacturing. Effect
Inactive Publication Date: 2014-09-24
SHIN ETSU CHEM CO LTD
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Problems solved by technology
[0009] If the growth is continued in this state until the diameter of the polycrystalline silicon rod becomes 130mm or more, the difference between the temperature at the center and the temperature on the surface side becomes 150°C or more. ℃~1300℃, the temperature of the central part is too high, and in the worst case, the failure of the central part may melt and the silicon core wire may collapse.
Method used
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[0156] [Example]
[0157] A silicon core wire 12 made of high-purity polysilicon is assembled in the chamber 1 of the reaction furnace 100 . After initially heating the silicon core wire 12 to 370° C. using the carbon heater 13 , energization of the silicon core wire 12 with an applied voltage of 2000 V and a low-frequency current of 50 Hz, which is a commercial frequency, was started.
[0158] A voltage of 1050V was applied to the silicon core wire 12 to set the surface temperature to 1160°C, and a mixed gas of hydrogen as a carrier gas and trichlorosilane as a source gas was supplied to start the precipitation reaction of polysilicon on the silicon core wire 12 .
[0159] After that, the precipitation reaction was continued under the above-mentioned energization conditions until the diameter of the polysilicon rod reached 82 mm, and then switched to a high-frequency current with a frequency of 80 kHz for energization, and the reaction was continued until the polysilicon rod ...
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Abstract
Switches (S1-S3) allow switching between parallel / series configuration in a circuit (16) provided between a pair of rectangular gate-shaped silicon cores (12) arranged in a bell jar (1). In the circuit (16), current is supplied from one low-frequency power source (15L) supplying a low-frequency current, or from one high-frequency power source (15H) supplying a high-frequency current having a frequency of 2kHz or greater. The pair of rectangular gate-shaped silicon cores (12) (and polycrystalline silicon rods (11)) are connected in series by closing the switch (S1) and opening the switches (S2 and S3), and when the switch (S4) is switched to the side of the high-frequency power source (15H), and electric heating can be performed by supplying a high-frequency current of a frequency greater than or equal to 2kHz to the series-connected rectangular gate-shaped silicon cores (12) (and polycrystalline silicon rods (11)).
Description
technical field [0001] The present invention relates to a technique for manufacturing polysilicon rods for obtaining high-purity polysilicon. Background technique [0002] Polycrystalline silicon is a raw material for monocrystalline silicon substrates for semiconductor device manufacturing and silicon substrates for solar cell manufacturing. In general, polysilicon is produced by the Siemens method in which a raw material gas containing chlorosilane is brought into contact with a heated silicon core wire, and polysilicon is deposited on the surface by chemical vapor deposition (CVD: Chemical Vapor Deposition). The surface of the silicon core wire is precipitated. [0003] When polysilicon is grown by the Siemens method, two silicon core wires in the vertical direction and one silicon core wire in the horizontal direction are assembled into a torii shape in the reaction furnace, and the ends of the torii-shaped silicon core wires are housed separately. on the core wire cla...
Claims
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IPC IPC(8): C01B33/035
CPCC23C16/24C23C16/50C01B33/035C23C16/46
Inventor 祢津茂义黑泽靖志星野成大
Owner SHIN ETSU CHEM CO LTD