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Modularized multi-lever converter with direct-current fault ride-through capacity

A modular multi-level, DC fault ride-through technology, applied in electrical components, power transmission AC networks, emergency protection circuit devices, etc., can solve problems such as device damage, DC side current increase, system danger, etc. Strong, the same effect, the effect of reducing the production cost

Active Publication Date: 2014-10-01
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both will lead to a sharp increase in the current on the DC side, and the semiconductor switch T1 and the freewheeling diode D2 must withstand overcurrent, which may cause damage to the device
This is undoubtedly dangerous for the entire system

Method used

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  • Modularized multi-lever converter with direct-current fault ride-through capacity
  • Modularized multi-lever converter with direct-current fault ride-through capacity
  • Modularized multi-lever converter with direct-current fault ride-through capacity

Examples

Experimental program
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Effect test

Embodiment Construction

[0026] Such as Figure 4 As shown, a modular multilevel converter with DC fault ride-through capability, the converter includes A-phase upper and lower bridge arms, B-phase upper and lower bridge arms, and C-phase upper and lower bridge arms; the sub-modules are divided into two types: first module and second module.

[0027] Wherein, the first module includes a DC capacitor C1, a semiconductor switch T1, a semiconductor switch T2, a freewheeling diode D1 and a freewheeling diode D2. A freewheeling diode D1 is forwardly connected in series between the emitter and collector of the semiconductor switch T1, and a freewheeling diode D2 is forwardly connected in series between the emitter and collector of the semiconductor switch T2. The emitter of the semiconductor switch T1 is connected to the collector of the semiconductor switch T2 as the positive terminal A of the first module, the emitter of the semiconductor switch T2 is used as the negative terminal B of the first module, ...

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Abstract

The invention provides a modularized multi-level converter with the direct-current fault ride-through capacity, wherein modules are divided into the first module and the second module. The structure of the first module is the same as the structure of a module in a traditional modularized multi-level converter, and a few semiconductor switches, a few diodes and a few damping resistors are added to the second module on the basis of the first module. The first module and the second module both have the level superposition function, but only the second module has the direct-current fault ride-through capacity. The modularized multi-level converter with the direct-current fault ride-through capacity not only can achieve the functions of a traditional modularized multi-level converter, but also has the direct-current fault ride-through capacity. Compared with an existing modularized multi-level circuit with the direct-current fault ride-through capacity, the circuit of the modularized multi-level converter is provided with fewer devices and simple in structure. The modularized multi-level converter is applicable to modulation and control strategies of the traditional modularized multi-level converter, applicable to high-voltage high-power occasions and particularly suitable for the high-voltage direct-current power transmission field in which a modularized multi-level converter is applied and prone to direct-current faults.

Description

technical field [0001] The invention relates to a modular multilevel converter with DC fault ride-through capability, belonging to the technical field of power electronics applications. Background technique [0002] With the rapid development of the economy and the gradual expansion of the scale of social production, the demand for various forms of power continues to grow, and the requirements for power electronic equipment are also getting higher and higher, and power electronics technology is developing rapidly. With the advantages of high output voltage, low harmonic content, small voltage change rate, small voltage stress of power switching devices, and low switching frequency, it is gradually becoming a research hotspot in the field of high-voltage and high-power power applications. With the continuous improvement of the withstand voltage level and capacity of fully-controlled power electronic devices, it is possible to apply a variety of voltage source converters compo...

Claims

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Application Information

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IPC IPC(8): H02J3/36H02H7/10
CPCY02E60/60
Inventor 赵剑锋李东野
Owner SOUTHEAST UNIV
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