A chemical composition for accelerating the growth of an inert silicon compound on a substrate surface

Abstract

The invention provides a chemical composition used for increasing growth of an inert silicon compound on a surface of a substrate. The chemical composition includes following components, by weight: 0.1-25% of fluosilicic acid or a fluosilicate compound, 0.1-15% of an amino acid compound, 0.05-15% of an ammonium compound, 0.001-30% of an inorganic acid, 0.001-30% of an organic acid, 0.001-0.05% of a surfactant, 0.01-10% of a core additive and the balance water. The auxiliary chemical compound is low in cost, convenient to use and good in repeatability. Through application of the auxiliary chemical compound to the growth of an inert silicon compound thin film on the surface of a silicon wafer, a manufactured silicon wafer is uniform in surface color and distribution of the inert silicon compound thin film on the silicon wafer is uniform. The composition is especially suitable for a photovoltaic industry and an electronic industry. Required temperature in growth of the inert silicon compound thin film on the surface of the substrate can be significantly decreased, thereby significantly reducing a production cost.

Description

technical field [0001] The invention belongs to the field of materials, in particular to a chemical composition for optimizing the growth of an inert silicon compound on a substrate surface; more particularly, the invention relates to a chemical composition for accelerating the growth of an inert silicon compound on a substrate Auxiliary chemical composition on the bottom surface. Inert silicon compounds include all compounds that can react silicon atoms with dangling bonds on the surface of elemental silicon to form non-conductive silicon. Background technique [0002] The inert silicon compound film has high hardness, good wear resistance, good heat insulation, high light transmittance, strong corrosion resistance and good dielectric properties. In the prior art, great progress has been made in the preparation of transparent inert silicon compound films with excellent properties through the development of preparation methods and processes and the study of the influence of...

AI Technical Summary

Problems solved by technology

However, the method generates inert silicon compounds at a very slow rate of about 8 nanometers per hour, making it difficult to apply in industry

[0007] In order to increase the growth rate of inert silicon compounds, most researchers add boric acid, metal compounds or other additives to the reaction solution, but in most cases the grown silicon dioxide is not evenly distributed on the substrate surface

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