Temperature compensation method and temperature control method and system for heat treatment equipment

Abstract

The invention discloses a temperature compensation method. The method comprises the steps that a plurality of second temperature sensors are installed on a silicon wafer keeping piece; the silicon wafer keeping piece is placed into a treatment container, and the second temperature sensors correspond to a plurality of first temperature sensors in the treatment container in a one-to-one mode; a heater is controlled to take the second temperature sensors as a temperature control object to adjust the temperature inside the treatment container, temperature collected by the second sensors rises to reach a plurality of discrete temperature points, and the collected temperature is controlled to be kept constant for a certain time period at discrete temperature points when converged at the discrete temperature points; the temperature collected by the first temperature sensors and the temperature collected by the second temperature sensors are periodically recorded within the constant temperature time period of each discrete temperature point, and a temperature difference value is calculated; in the actual heat treatment technology, according to the discrete temperature points and the corresponding temperature difference value, the temperature difference value corresponding to target temperature is calculated through a linear interpolation method and used as a temperature compensation value of the temperature collected by the first temperature sensors. The temperature compensation method can truly reflect the silicon wafer temperature.

Description

technical field [0001] The invention relates to the technical field of temperature control of semiconductor heat treatment process, in particular to a temperature compensation method, a temperature control method and a temperature control system applied to heat treatment equipment. Background technique [0002] Silicon wafer is an important semiconductor material. At present, vertical heat treatment equipment with higher automation and better process performance is generally used to perform batch processing processes on silicon wafers, such as deposition, oxidation and diffusion. With the reduction of process feature size, higher requirements are put forward for the processing precision of the silicon wafer surface, which all depend on the accuracy of temperature control in the process, especially the control accuracy of the silicon wafer surface temperature. [0003] However, in the actual process, the temperature of the silicon wafer cannot be directly measured, because if...

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Problems solved by technology

However, although the inner thermocouple is closer to the temperature of the silicon chip itself, there is still an actual temperature difference with the temperature of the silicon chip

And in the actual process, the semiconductor heat treatment equipment will span multiple temperature ranges, and the difference between the temperature of the silicon wafer and the temperature of the Inner thermocouple in different temperature ranges is different, so the temperature value measured by the Inner thermocouple cannot correctly reflect the temperature of the silicon chip. Sheet temperature, if the temperature value measured by the Inner thermocouple is used as the temperature control object, it will seriously affect the process quality, such as the adjustment of the target film thickness, the adjustment of the uniformity between sheets, etc.

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