Nitride semiconductor device

Abstract

This nitride semiconductor device is provided with a substrate (10), a nitride semiconductor laminate (20) and ohmic electrodes (11, 12) that are formed of a TiAl-based material. The nitride semiconductor laminate (20) comprises a first nitride semiconductor layer (1) that is formed on the substrate (10) and a second nitride semiconductor layer (2) that forms a heterointerface with the first nitride semiconductor layer (1). This nitride semiconductor device has, in an oxygen concentration distribution in the depth direction from the ohmic electrodes (11, 12) to the nitride semiconductor laminate (20), a first oxygen concentration peak at a position near the interface between the ohmic electrodes (11, 12) and the nitride semiconductor laminate (20) in a region that is closer to the substrate (10) than the interface, while having a second oxygen concentration peak, at which the oxygen concentration is from 3 × 1017 cm-3 to 1.2 × 1018 cm-3 (inclusive), at a position that is deeper than the position of the first oxygen concentration peak.

Description

technical field [0001] The present invention relates to nitride semiconductor devices. Background technique [0002] Conventionally, as a nitride semiconductor device, the surface of the n-type GaN contact layer is subjected to oxygen plasma treatment to form an oxygen-doped layer, and an ohmic electrode is formed on the n-type GaN contact layer, thereby making the n-type GaN contact layer and A nitride semiconductor device in which the contact resistance of ohmic electrodes is reduced (see Japanese Patent No. 2967743 (Patent Document 1)). [0003] However, in the above-mentioned nitride semiconductor device, the present inventors actually conducted an experiment, and when the GaN layer was subjected to oxygen plasma treatment and an ohmic electrode was formed, the contact resistance of the ohmic electrode was high, and no matter what was done, it could not be sufficiently low. contact resistance. [0004] prior art literature [0005] patent documents [0006] Patent Do...

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Problems solved by technology

[0003] However, in the above-mentioned nitride semiconductor device, the present inventors actually conducted an experiment, and when the GaN layer was subjected to oxygen plasma treatment and an ohmic electrode was formed, the contact resistance of the ohmic electrode was high, and no matter what was done, it could not be sufficiently low. contact resistance

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