Preparation method of copper target

Abstract

The invention provides a preparation method of a copper target. The preparation method comprises the following steps: firstly, the compaction treatment is performed for a copper blank by adopting a hot forging process; a first copper target blank is formed after the copper blank is cooled; the first copper target blank is rolled to reduce the thickness by 10-50% to form a second copper target blank; and the second copper target blank is annealed to form the copper target. The preparation method can prepare the copper target with fine grains, compacter grain structure and 90-130 HV of hardness.

Description

technical field [0001] The invention relates to the field of semiconductor sputtering, in particular to a method for preparing a copper target. Background technique [0002] Magnetron sputtering is a substrate coating process that uses charged particles to bombard the target, so that the target atoms escape from the surface and are evenly deposited on the substrate. Magnetron sputtering has become the most excellent substrate coating process due to its advantages of high sputtering rate, low substrate temperature rise, good film-substrate bonding force, excellent metal coating uniformity and strong controllability. Magnetron sputtering is widely used in coating processes in industries such as chip manufacturing, liquid crystal display manufacturing, and solar cell manufacturing. [0003] For example, in the preparation process of the interconnection on the liquid crystal display (abbreviation: LCD) liquid crystal display panel, a uniform copper coating layer is often formed...

AI Technical Summary

Problems solved by technology

[0005] However, due to the limitations of the hardness of some materials such as copper (conventional copper target hardness is only 40-60HV, and the larger one is only about 80HV), the target area cannot be increased; if the area is too large (greater than 0.5 m2), it is easy to deform during the magnetron sputtering process, resulting in a decrease in the quality of the copper coating

In addition, the hardness of the target is related to the control of the film-forming rate on the substrate. Under the same ion beam current conditions, the density between copper grains based on the low-hardness copper target is low. High-density copper targets with high hardness, copper ions in low-hardness copper targets are more likely to be sputtered off the target, and it is more difficult to control the amount of copper atoms sputtered out of the target surface, which in turn affects the film formation rate. more difficult to control

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