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Fabrication method for light emitting diode

A technology for light-emitting diodes and a manufacturing method, which can be applied to electrical components, circuits, semiconductor devices, etc., and can solve problems such as reduced light reflection efficiency

Inactive Publication Date: 2014-11-05
ZHANJING TECH SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the Bragg reflective layer can only partially reflect the light perpendicular to the substrate. If the light deviates from the direction perpendicular to the substrate, the Bragg reflective layer will reduce the reflection efficiency of the light.

Method used

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  • Fabrication method for light emitting diode
  • Fabrication method for light emitting diode
  • Fabrication method for light emitting diode

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Experimental program
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Embodiment Construction

[0020] The manufacturing method of the light emitting diode of the present invention will be further described below with reference to the drawings.

[0021] See figure 1 , first provide a substrate 110 . The substrate 110 may be a sapphire substrate, a silicon substrate or a silicon carbide substrate.

[0022] See figure 2 , growing an undoped GaN layer 120 on the substrate 110 .

[0023] See image 3 , the surface of the undoped GaN layer 120 opposite to the substrate 110 is etched to form a plurality of grooves 130 . In this embodiment, each groove 130 includes a bottom surface 131 and a side surface 132 extending upward from the bottom surface 131 . The side surface 132 is inclined to the bottom surface 131 , so that the opening size of the groove 130 gradually increases along the direction away from the substrate 110 . According to requirements, the depth D of the groove 130 is between 50nm and 300nm. The width W of each groove 130 is 3 μm.

[0024] See Figure ...

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Abstract

An exemplary method for manufacturing a light emitting diode includes following steps: providing a substrate; growing an undoped GaN layer on the substrate, the undoped GaN layer comprising an upper surface away from the substrate and a lower surface contacting the substrate; etching the upper surface of the undoped GaN layer to form a plurality of cavities; growing an Distributed Bragg Reflector layer on the upper surface of the undoped GaN layer; and forming sequentially an N-type GaN layer, an active layer and a P-type GaN layer on the Distributed Bragg Reflector layer.

Description

technical field [0001] The invention relates to a method for manufacturing a light emitting diode. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is an optoelectronic semiconductor element that can convert current into a specific wavelength range. Light-emitting diodes can be widely used as light sources in the field of lighting because of their advantages such as high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life. [0003] The light emitting diode grain generally includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer formed on the substrate in sequence. However, the light emitted by the active layer towards the substrate is easily absorbed by the buffer layer and the substrate, thereby reducing the overall light extraction efficiency of the LED crystal grains. In order to solve the problem of li...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/10
CPCH01L33/0075H01L33/10H01L33/007
Inventor 邱镜学林雅雯凃博闵黄世晟
Owner ZHANJING TECH SHENZHEN