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High-crystal-quality infrared light emitting diode

A technology of crystal quality and infrared luminescence, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of quantum well mismatch, poor crystal quality of epitaxial layers, etc., and achieve the effect of improving luminous efficiency

Active Publication Date: 2014-11-26
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a high crystal quality infrared light-emitting diode to solve the technical problem of poor crystal quality of the epitaxial layer caused by the mismatch between the quantum well in the active region and other epitaxial layers, and to improve the luminous efficiency of the infrared light-emitting diode

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  • High-crystal-quality infrared light emitting diode

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Embodiment 1

[0068] refer to Figure 1 to Figure 4 As shown, a high crystal quality infrared light-emitting diode disclosed by the present invention comprises growth buffer layer 2, corrosion stop layer 3, ohmic contact layer 4, current transport layer 5, and roughened layer 6 from substrate 1 to bottom to top. , the first type conduction layer 7 , the first temperature transition layer 8 , the active layer 9 , the second temperature transition layer 10 and the second type conduction layer 11 .

[0069] The roughened layer 6 is composed of four parts, namely a first roughened layer 61 , a second roughened layer 62 , a third roughened layer 63 , and a fourth roughened layer 64 .

[0070] The active layer 9 is composed of seven sets of quantum barriers 91 , composition gradient cooling layers 92 and quantum wells 93 alternately.

[0071] In order to achieve the preparation of infrared light-emitting diodes with high crystal quality, the following epitaxial growth steps are required:

[007...

Embodiment 2

[0091] The difference between the second embodiment and the first embodiment is that the active layer 9 is composed of six sets of quantum barriers 91 , composition gradient cooling layers 92 and quantum wells 93 alternately, while the first embodiment has seven sets.

[0092] Such as Figure 5 As shown, an infrared light-emitting diode, from the bottom to the top of the substrate 1 is a growth buffer layer 2, an etching stop layer 3, an ohmic contact layer 4, a current transmission layer 5, a roughening layer 6, and a first-type conductive layer 7 , a first temperature transition layer 8 , an active layer 9 , a second temperature transition layer 10 , and a second-type conductive layer 11 .

[0093] The roughened layer 6 is composed of four parts, namely the first roughened layer 61, the second roughened layer 62, the third roughened layer 63, and the fourth roughened layer 64; the active layer 9 consists of six groups of quantum barriers 91, Composition gradient cooling lay...

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Abstract

The invention discloses a high-crystal-quality infrared light emitting diode. A buffering layer, a corrosion cut-off layer, an ohmic contact layer, a current transmission layer, a coarsening layer, a first type conducting layer, an active layer and a second type conducting layer are formed on a substrate in sequence. The active layer is composed of a plurality of sets of three-layer structures in a circulating mode, wherein each three-layer structure include a quantum barrier, a cooling layer and a quantum well, and in each three-layer structure, the cooling layer is located between the quantum barrier and the quantum well. The high-crystal-quality infrared light emitting diode solves the problems that due to mismatching between the quantum wells of the active layer and other epitaxial layers, the quality of crystals of epitaxial layers becomes low. The quantum efficiency of the infrared light emitting diode is improved.

Description

technical field [0001] The invention relates to the technical field of infrared light-emitting diodes, in particular to an infrared light-emitting diode with high crystal quality. Background technique [0002] Due to the advantages of low power consumption, small size and high reliability, infrared light-emitting diodes are widely used in communication, remote sensing devices and other fields. [0003] In the prior art, infrared light-emitting diodes mainly use heterojunctions grown by liquid phase epitaxy as the active layer of infrared light-emitting diodes. The defects of infrared diodes grown by liquid phase epitaxy are low internal quantum efficiency and limited power. [0004] With the increasing demand for the power of infrared light-emitting diodes, manufacturing high-power infrared light-emitting diodes has become a development trend. The infrared light-emitting diodes with quantum well structure can be grown epitaxially with higher internal quantum efficiency by m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/12H01L33/22H01L33/06
CPCH01L33/0075H01L33/06H01L33/22H01L33/30
Inventor 林志伟陈凯轩白继锋杨凯卓祥景张永姜伟蔡建九刘碧霞
Owner XIAMEN CHANGELIGHT CO LTD
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