Epitaxial growing method of high-crystal-quality infrared light emitting diode
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of epitaxial growth and crystal quality, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of poor crystal quality of the epitaxial layer, and achieve the effect of improving crystal quality, increasing luminous efficiency, and improving internal quantum luminous efficiency
Active Publication Date: 2014-11-26
XIAMEN QIANZHAO SEMICON TECH CO LTD
View PDF3 Cites 9 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0006] The purpose of the present invention is to provide an epitaxial growth method of high crystal quality infrared light-emitting diodes, to solve the technical problem of poor crystal quality of the epitaxial layer caused by the mismatch between the quantum well in the active region and other epitaxial layers, and to improve the quality of infrared light-emitting diodes. Luminous efficiency
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0066] refer to Figure 1 to Figure 4 As shown, a high crystal quality infrared light-emitting diode disclosed by the present invention comprises growth buffer layer 2, corrosion stop layer 3, ohmic contact layer 4, current transport layer 5, and roughened layer 6 from substrate 1 to bottom to top. , the first type conduction layer 7 , the first temperature transition layer 8 , the active layer 9 , the second temperature transition layer 10 and the second type conduction layer 11 .
[0067] The roughened layer 6 is composed of four parts, namely a first roughened layer 61 , a second roughened layer 62 , a third roughened layer 63 , and a fourth roughened layer 64 .
[0068] The active layer 9 is composed of seven sets of quantum barriers 91 , composition gradient cooling layers 92 and quantum wells 93 alternately.
[0069] A method for epitaxial growth of infrared light-emitting diodes with high crystal quality, the specific steps are as follows:
[0070] 1. Using a reaction...
Embodiment 2
[0089]The difference between the second embodiment and the first embodiment is that the active layer 9 is composed of six sets of quantum barriers 91 , composition gradient cooling layers 92 and quantum wells 93 alternately, while the first embodiment has seven sets.
[0090] like Figure 5 As shown, an infrared light-emitting diode, from the bottom to the top of the substrate 1 is a growth buffer layer 2, an etching stop layer 3, an ohmic contact layer 4, a current transmission layer 5, a roughening layer 6, and a first-type conductive layer 7 , a first temperature transition layer 8 , an active layer 9 , a second temperature transition layer 10 , and a second-type conductive layer 11 .
[0091] The roughened layer 6 is composed of four parts, namely the first roughened layer 61, the second roughened layer 62, the third roughened layer 63, and the fourth roughened layer 64; the active layer 9 consists of six groups of quantum barriers 91, Composition gradient cooling layers ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Login to view more
Abstract
The invention discloses an epitaxial growing method of a high-crystal-quality infrared light emitting diode. The epitaxial growing method comprises the steps that a buffer layer, a corrosion cut-off layer, an ohmic contact layer and a current transmission layer grow on a substrate in an expitaxial mode in sequence; one minute after the current transmission layer stops growing, the pressure is reduced by 30 mbar, and a coarsening layer grows; a first type conducting layer grows on the coarsening layer in an epitaxial mode; a quantum barrier grows on the first type conducting layer; after epitaxy of the quantum barrier is finished, the growing flow of Al and Ga is changed, and the quantum barrier gradually extends to a constituent gradually-changing cooling layer composed of AlGaAs materials with the low Al constituent; an AlGaInAs quantum well layer grows in an epitaxial mode; epitaxial growing pauses, the temperature is increased to be equal to the growing temperature of the quantum barrier; the quantum barrier, the constituent gradually-changing cooling layer and a quantum well continue to grow in sequence; a second type conducting layer grows on an active layer in an epitaxial mode. The epitaxial growing method solves the technical problem that mismatching exists between the quantum well of the active area and the other epitaxial layers, and the luminous efficiency of the infrared light emitting diode is improved.
Description
technical field [0001] The invention relates to the technical field of infrared light emitting diodes, in particular to an epitaxial growth method of high crystal quality infrared light emitting diodes. Background technique [0002] Due to the advantages of low power consumption, small size and high reliability, infrared light-emitting diodes are widely used in communication, remote sensing devices and other fields. [0003] In the prior art, infrared light-emitting diodes mainly use heterojunctions grown by liquid phase epitaxy as the active layer of infrared light-emitting diodes. The defects of infrared diodes grown by liquid phase epitaxy are low internal quantum efficiency and limited power. [0004] With the increasing demand for the power of infrared light-emitting diodes, manufacturing high-power infrared light-emitting diodes has become a development trend. The infrared light-emitting diodes with quantum well structure can be grown epitaxially with higher internal ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more 
Login to view more