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A kind of epitaxial growth method of high crystal quality infrared light-emitting diode

A technology of epitaxial growth and crystal quality, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of poor crystal quality in epitaxial layers, and achieve the effects of improving crystal quality, increasing internal quantum luminous efficiency, and increasing luminous efficiency

Active Publication Date: 2017-03-29
XIAMEN QIANZHAO SEMICON TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide an epitaxial growth method of high crystal quality infrared light-emitting diodes, to solve the technical problem of poor crystal quality of the epitaxial layer caused by the mismatch between the quantum well in the active region and other epitaxial layers, and to improve the quality of infrared light-emitting diodes. Luminous efficiency

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  • A kind of epitaxial growth method of high crystal quality infrared light-emitting diode
  • A kind of epitaxial growth method of high crystal quality infrared light-emitting diode
  • A kind of epitaxial growth method of high crystal quality infrared light-emitting diode

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Embodiment 1

[0066] Refer to Figure 1 to Figure 4 As shown, a high-crystalline quality infrared light-emitting diode disclosed by the present invention, from the substrate 1 to the bottom-up in sequence is the growth buffer layer 2, the corrosion stop layer 3, the ohmic contact layer 4, the current transport layer 5, and the roughened layer 6. , The first type conductive layer 7, the first temperature transition layer 8, the active layer 9, the second temperature transition layer 10, and the second type conductive layer 11.

[0067] The roughened layer 6 is composed of four parts, which are a first roughened layer 61, a second roughened layer 62, a third roughened layer 63, and a fourth roughened layer 64, respectively.

[0068] The active layer 9 is alternately composed of seven sets of quantum barriers 91, a temperature-graded cooling layer 92 and quantum wells 93.

[0069] A method for epitaxial growth of high crystal quality infrared light emitting diodes, the specific steps are as follows:...

Embodiment 2

[0089] The difference between the second embodiment and the first embodiment is that the active layer 9 is composed of six sets of quantum barriers 91, the composition gradient cooling layer 92 and the quantum wells 93 alternately, while the first embodiment has seven sets.

[0090] Such as Figure 5 As shown, an infrared light-emitting diode, from substrate 1 to bottom to top, is the growth buffer layer 2, the corrosion stop layer 3, the ohmic contact layer 4, the current transport layer 5, the roughened layer 6, and the first type conductive layer 7. , The first temperature transition layer 8, the active layer 9, the second temperature transition layer 10, and the second type conductive layer 11.

[0091] The roughened layer 6 is composed of four parts, namely the first roughened layer 61, the second roughened layer 62, the third roughened layer 63, and the fourth roughened layer 64; the active layer 9 consists of six sets of quantum barriers 91, The composition gradient cooling ...

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Abstract

The invention discloses an epitaxial growing method of a high-crystal-quality infrared light emitting diode. The epitaxial growing method comprises the steps that a buffer layer, a corrosion cut-off layer, an ohmic contact layer and a current transmission layer grow on a substrate in an expitaxial mode in sequence; one minute after the current transmission layer stops growing, the pressure is reduced by 30 mbar, and a coarsening layer grows; a first type conducting layer grows on the coarsening layer in an epitaxial mode; a quantum barrier grows on the first type conducting layer; after epitaxy of the quantum barrier is finished, the growing flow of Al and Ga is changed, and the quantum barrier gradually extends to a constituent gradually-changing cooling layer composed of AlGaAs materials with the low Al constituent; an AlGaInAs quantum well layer grows in an epitaxial mode; epitaxial growing pauses, the temperature is increased to be equal to the growing temperature of the quantum barrier; the quantum barrier, the constituent gradually-changing cooling layer and a quantum well continue to grow in sequence; a second type conducting layer grows on an active layer in an epitaxial mode. The epitaxial growing method solves the technical problem that mismatching exists between the quantum well of the active area and the other epitaxial layers, and the luminous efficiency of the infrared light emitting diode is improved.

Description

Technical field [0001] The invention relates to the technical field of infrared light-emitting diodes, in particular to an epitaxial growth method of high-crystalline quality infrared light-emitting diodes. Background technique [0002] Infrared light-emitting diodes are widely used in fields such as communications and remote sensing devices due to their low power consumption, small size and high reliability. [0003] In the prior art, infrared light emitting diodes mainly use a heterojunction grown by liquid phase epitaxy as an active layer of infrared light emitting diodes. The defects of infrared diodes grown by liquid phase epitaxy are low internal quantum efficiency and limited power. [0004] With the increasing demand for the power of infrared light-emitting diodes, manufacturing high-power infrared light-emitting diodes has become a development trend. Using metal organic compound vapor deposition method, epitaxial growth of infrared light emitting diodes with quantum well st...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/0075H01L33/02H01L33/06
Inventor 林志伟陈凯轩白继锋杨凯卓祥景张永姜伟蔡建九刘碧霞
Owner XIAMEN QIANZHAO SEMICON TECH CO LTD
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