Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A ni-mn-based ferromagnetic shape memory alloy and piezoelectric composite material with magnetic card effect and its application

A technology of memory alloy and magnetic card effect, applied in the direction of material selection, etc., can solve the problems of high width and narrow width, large hysteresis, half-height width and narrowness, etc., and achieve the effect of improving recovery and reducing hysteresis

Inactive Publication Date: 2017-02-15
NANJING UNIV
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the magnetic structure phase transition driven by its magnetic field is a first-order phase transition, accompanied by large hysteresis, poor recovery, and the half-height width as a first-order phase transition magnetic card effect is narrow
We invented a Ni-Mn-based ferromagnetic shape memory alloy / piezoelectric composite material with the characteristics of magnetic card effect controlled by electric field, which can solve the problems of narrow height, narrow width and poor recovery

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A ni-mn-based ferromagnetic shape memory alloy and piezoelectric composite material with magnetic card effect and its application
  • A ni-mn-based ferromagnetic shape memory alloy and piezoelectric composite material with magnetic card effect and its application
  • A ni-mn-based ferromagnetic shape memory alloy and piezoelectric composite material with magnetic card effect and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] specific implementation plan

[0020] By applying a voltage to the piezoelectric body, the stress generated by the piezoelectric body acts on the Ni-Mn-based ferromagnetic shape memory alloy, and the stress affects its phase transition process, thereby changing the phase transition temperature and magnetic card effect. Experiments and theoretical calculations show that by applying different voltages to the piezoelectric body, the phase transition temperature of Ni-Mn-based ferromagnetic shape memory alloys changes, and the magnetic card effect also shifts laterally with the temperature axis as the phase transition temperature changes. Magnetic measurements show that hysteresis can be reduced and irreversibility can be reduced by applying different voltages during the lifting and lowering of the field.

[0021] The composite material is PMN / Ni-Co-Mn-In, and there is no essential difference in using Ni-Mn-In, Ni-Mn-Sn or Ni-Mn-Co-Sn. The two materials are laminated with s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a magneto-caloric Ni-Mn-based ferromagnetic-shape memory alloy and piezoelectric composite material composed of a Ni-Mn-based ferromagnetic-shape memory alloy and a piezoelectric. The piezoelectric material is Pb(Zr, Ti)O3(PZT) or 0.7Pb (Mn1 / 3Nb2 / 3)O3-0.3PbTiO3(PMN-PT). The molecular formula of the Ni-Mn-based ferromagnetic-shape memory alloy is Ni-Co-Mn-In, Ni-Mn-In, Ni-Mn-Sn, Ni-Mn-Co-Sn. The two materials are both flaky materials and are attached to each other to form the composite material. The thickness of the ferromagnetic-shape memory alloy is 1-2mm, and is formed by overlapping rapid-quenching thin bands or is an integral block, wherein each rapid-quenching thin band is 20-50 microns thick. The thickness of the piezoelectric is 0.4-0.8mm.

Description

technical field [0001] The invention relates to a Ni-Mn base ferromagnetic shape memory alloy / piezoelectric body composite material with the characteristic of magnetic card effect controlled by an electric field. [0002] technical background [0003] Room temperature magnetic refrigeration technology has the characteristics of environmental friendliness, energy saving and high efficiency, and is considered to be the most likely to replace the current air compression refrigeration technology. The main working principle of the room temperature magnetic refrigeration prototype is: the temperature of the refrigerant changes when the magnetic field is raised (lowered), and then the heat generated by the refrigerant is transferred to the hot and cold ends through the refrigerant. Therefore, the temperature change of the refrigerant in the process of rising (falling) field determines the working efficiency of the magnetic refrigerator. The effect of a material temperature change (...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/10
Inventor 王敦辉龚元元都有为
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com